Novel interface material used in high power electronic die-attaching on bare Cu substrates
Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prep...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhao, Su-Yan [verfasserIn] Li, Xin [verfasserIn] Mei, Yun-Hui [verfasserIn] Lu, Guo-Quan [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 27(2016), 10 vom: 21. Juni, Seite 10941-10950 |
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| Übergeordnetes Werk: |
volume:27 ; year:2016 ; number:10 ; day:21 ; month:06 ; pages:10941-10950 |
| Links: |
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| DOI / URN: |
10.1007/s10854-016-5208-8 |
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| Katalog-ID: |
SPR014012952 |
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| 520 | |a Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. | ||
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| 650 | 4 | |a Silver Film |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Silver Flake |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Wide Size Distribution Particle |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Li, Xin |e verfasserin |4 aut | |
| 700 | 1 | |a Mei, Yun-Hui |e verfasserin |4 aut | |
| 700 | 1 | |a Lu, Guo-Quan |e verfasserin |4 aut | |
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10.1007/s10854-016-5208-8 doi (DE-627)SPR014012952 (SPR)s10854-016-5208-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Zhao, Su-Yan verfasserin aut Novel interface material used in high power electronic die-attaching on bare Cu substrates 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 Li, Xin verfasserin aut Mei, Yun-Hui verfasserin aut Lu, Guo-Quan verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 10 vom: 21. Juni, Seite 10941-10950 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:10 day:21 month:06 pages:10941-10950 https://dx.doi.org/10.1007/s10854-016-5208-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 10 21 06 10941-10950 |
| spelling |
10.1007/s10854-016-5208-8 doi (DE-627)SPR014012952 (SPR)s10854-016-5208-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Zhao, Su-Yan verfasserin aut Novel interface material used in high power electronic die-attaching on bare Cu substrates 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 Li, Xin verfasserin aut Mei, Yun-Hui verfasserin aut Lu, Guo-Quan verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 10 vom: 21. Juni, Seite 10941-10950 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:10 day:21 month:06 pages:10941-10950 https://dx.doi.org/10.1007/s10854-016-5208-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 10 21 06 10941-10950 |
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10.1007/s10854-016-5208-8 doi (DE-627)SPR014012952 (SPR)s10854-016-5208-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Zhao, Su-Yan verfasserin aut Novel interface material used in high power electronic die-attaching on bare Cu substrates 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 Li, Xin verfasserin aut Mei, Yun-Hui verfasserin aut Lu, Guo-Quan verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 10 vom: 21. Juni, Seite 10941-10950 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:10 day:21 month:06 pages:10941-10950 https://dx.doi.org/10.1007/s10854-016-5208-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 10 21 06 10941-10950 |
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10.1007/s10854-016-5208-8 doi (DE-627)SPR014012952 (SPR)s10854-016-5208-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Zhao, Su-Yan verfasserin aut Novel interface material used in high power electronic die-attaching on bare Cu substrates 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 Li, Xin verfasserin aut Mei, Yun-Hui verfasserin aut Lu, Guo-Quan verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 10 vom: 21. Juni, Seite 10941-10950 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:10 day:21 month:06 pages:10941-10950 https://dx.doi.org/10.1007/s10854-016-5208-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 10 21 06 10941-10950 |
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10.1007/s10854-016-5208-8 doi (DE-627)SPR014012952 (SPR)s10854-016-5208-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Zhao, Su-Yan verfasserin aut Novel interface material used in high power electronic die-attaching on bare Cu substrates 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 Li, Xin verfasserin aut Mei, Yun-Hui verfasserin aut Lu, Guo-Quan verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 10 vom: 21. Juni, Seite 10941-10950 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:10 day:21 month:06 pages:10941-10950 https://dx.doi.org/10.1007/s10854-016-5208-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 10 21 06 10941-10950 |
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Zhao, Su-Yan @@aut@@ Li, Xin @@aut@@ Mei, Yun-Hui @@aut@@ Lu, Guo-Quan @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR014012952</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004620.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-016-5208-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR014012952</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-016-5208-8-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Zhao, Su-Yan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Novel interface material used in high power electronic die-attaching on bare Cu substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. 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Zhao, Su-Yan |
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Zhao, Su-Yan ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Silver Nanoparticles misc Silver Particle misc Silver Film misc Silver Flake misc Wide Size Distribution Particle Novel interface material used in high power electronic die-attaching on bare Cu substrates |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Novel interface material used in high power electronic die-attaching on bare Cu substrates Silver Nanoparticles (dpeaa)DE-He213 Silver Particle (dpeaa)DE-He213 Silver Film (dpeaa)DE-He213 Silver Flake (dpeaa)DE-He213 Wide Size Distribution Particle (dpeaa)DE-He213 |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Silver Nanoparticles misc Silver Particle misc Silver Film misc Silver Flake misc Wide Size Distribution Particle |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Silver Nanoparticles misc Silver Particle misc Silver Film misc Silver Flake misc Wide Size Distribution Particle |
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Zhao, Su-Yan |
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novel interface material used in high power electronic die-attaching on bare cu substrates |
| title_auth |
Novel interface material used in high power electronic die-attaching on bare Cu substrates |
| abstract |
Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. |
| abstractGer |
Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. |
| abstract_unstemmed |
Abstract Silver paste sintering on bare Cu substrates can be of significant interest in power semiconductor manufacturing. However, the bare Cu substrates easily oxidized and the die attachment using the silver paste commonly applied pressure. In this study, these problems are solved by using a prepared novel silver paste, which could be pressure-less low temperature sintered completely under inert gas (99.99 wt% $ N_{2} $). The silver paste consists of wide size distribution particles as Ag nanoparticles, Ag sub-micro-sized particles and micro-sized Ag flakes. High content of organic system mixture in the silver paste need more evaporating time to avoid cracks in the sintered Ag film. During sintering, the Ag flakes in situ formation of highly reactive silver nanoparticles is crucial for the sintering to occur between the silver flake and particles, unlike the sintering between the silver particles. A dense silver film contributed to the sintered silver flakes, which has the nature of good densification, well sintering with the silver nanoparticle. The possible joining mechanisms of metallic bond and hydrogen bonds between bare Cu and sintered Ag were proved. Accordingly, the sandwich joints (chip/silver paste/bare Cu) include high bonding strength and low thermal impedance. |
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Novel interface material used in high power electronic die-attaching on bare Cu substrates |
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Li, Xin Mei, Yun-Hui Lu, Guo-Quan |
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| score |
7.3975134 |