Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target
Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb d...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ben Jemaa, I. [verfasserIn] Chaabouni, F. [verfasserIn] Presmanes, L. [verfasserIn] Thimont, Y. [verfasserIn] Abaab, M. [verfasserIn] Barnabe, A. [verfasserIn] Tailhades, P. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 27(2016), 12 vom: 06. Aug., Seite 13242-13248 |
|---|---|
| Übergeordnetes Werk: |
volume:27 ; year:2016 ; number:12 ; day:06 ; month:08 ; pages:13242-13248 |
| Links: |
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| DOI / URN: |
10.1007/s10854-016-5471-8 |
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| Katalog-ID: |
SPR01401601X |
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| 520 | |a Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. | ||
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10.1007/s10854-016-5471-8 doi (DE-627)SPR01401601X (SPR)s10854-016-5471-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ben Jemaa, I. verfasserin aut Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 Chaabouni, F. verfasserin aut Presmanes, L. verfasserin aut Thimont, Y. verfasserin aut Abaab, M. verfasserin aut Barnabe, A. verfasserin aut Tailhades, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 12 vom: 06. Aug., Seite 13242-13248 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:12 day:06 month:08 pages:13242-13248 https://dx.doi.org/10.1007/s10854-016-5471-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 12 06 08 13242-13248 |
| spelling |
10.1007/s10854-016-5471-8 doi (DE-627)SPR01401601X (SPR)s10854-016-5471-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ben Jemaa, I. verfasserin aut Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 Chaabouni, F. verfasserin aut Presmanes, L. verfasserin aut Thimont, Y. verfasserin aut Abaab, M. verfasserin aut Barnabe, A. verfasserin aut Tailhades, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 12 vom: 06. Aug., Seite 13242-13248 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:12 day:06 month:08 pages:13242-13248 https://dx.doi.org/10.1007/s10854-016-5471-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 12 06 08 13242-13248 |
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10.1007/s10854-016-5471-8 doi (DE-627)SPR01401601X (SPR)s10854-016-5471-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ben Jemaa, I. verfasserin aut Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 Chaabouni, F. verfasserin aut Presmanes, L. verfasserin aut Thimont, Y. verfasserin aut Abaab, M. verfasserin aut Barnabe, A. verfasserin aut Tailhades, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 12 vom: 06. Aug., Seite 13242-13248 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:12 day:06 month:08 pages:13242-13248 https://dx.doi.org/10.1007/s10854-016-5471-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 12 06 08 13242-13248 |
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10.1007/s10854-016-5471-8 doi (DE-627)SPR01401601X (SPR)s10854-016-5471-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ben Jemaa, I. verfasserin aut Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 Chaabouni, F. verfasserin aut Presmanes, L. verfasserin aut Thimont, Y. verfasserin aut Abaab, M. verfasserin aut Barnabe, A. verfasserin aut Tailhades, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 12 vom: 06. Aug., Seite 13242-13248 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:12 day:06 month:08 pages:13242-13248 https://dx.doi.org/10.1007/s10854-016-5471-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 12 06 08 13242-13248 |
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10.1007/s10854-016-5471-8 doi (DE-627)SPR01401601X (SPR)s10854-016-5471-8-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Ben Jemaa, I. verfasserin aut Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 Chaabouni, F. verfasserin aut Presmanes, L. verfasserin aut Thimont, Y. verfasserin aut Abaab, M. verfasserin aut Barnabe, A. verfasserin aut Tailhades, P. verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 27(2016), 12 vom: 06. Aug., Seite 13242-13248 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:27 year:2016 number:12 day:06 month:08 pages:13242-13248 https://dx.doi.org/10.1007/s10854-016-5471-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 27 2016 12 06 08 13242-13248 |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR01401601X</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111004627.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2016 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10854-016-5471-8</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR01401601X</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10854-016-5471-8-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.61</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.10</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.40</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.09</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ben Jemaa, I.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. 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Ben Jemaa, I. |
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Ben Jemaa, I. ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc TiO2 misc Rutile misc Rutile Phase misc TiO2 Thin Film misc Urbach Energy Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target TiO2 (dpeaa)DE-He213 Rutile (dpeaa)DE-He213 Rutile Phase (dpeaa)DE-He213 TiO2 Thin Film (dpeaa)DE-He213 Urbach Energy (dpeaa)DE-He213 |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc TiO2 misc Rutile misc Rutile Phase misc TiO2 Thin Film misc Urbach Energy |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc TiO2 misc Rutile misc Rutile Phase misc TiO2 Thin Film misc Urbach Energy |
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Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target |
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Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target |
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Ben Jemaa, I. |
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Journal of materials science |
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Journal of materials science |
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eng |
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2016 |
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Ben Jemaa, I. Chaabouni, F. Presmanes, L. Thimont, Y. Abaab, M. Barnabe, A. Tailhades, P. |
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Elektronische Aufsätze |
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Ben Jemaa, I. |
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10.1007/s10854-016-5471-8 |
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600 670 620 |
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verfasserin |
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structural, optical and electrical investigations on nb doped $ tio_{2} $ radio-frequency sputtered thin films from a powder target |
| title_auth |
Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target |
| abstract |
Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. |
| abstractGer |
Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. |
| abstract_unstemmed |
Abstract Pure and Nb doped $ TiO_{2} $ (TNO) thin films were deposited onto glass substrates by RF magnetron sputtering technique using a Nb and $ TiO_{2} $ mixture powder target at room temperature to explore the possibility of producing sputtered TNO films by a low cost process. The effect of Nb doping on the structure, morphology, optical and electrical properties of the prepared films was studied by systematically varying the Nb content from 2 to 6 wt%. GXRD results show that the deposited films mainly possess rutile phase with the (110) orientation. Raman spectra confirm that the deposited films are predominantly rutile phase. Surface roughness increases with the increase of Nb doping concentration , which may be attributed to the structural changes in the film due to the incorporation of Nb into the $ TiO_{2} $ lattice. Optical transmittance in the visible range reaches 85 % for the undoped films then it decreases as the doping content increases. Doping by niobium resulted in a slight increase in the optical band gap energy of the films due to the Burstein–Moss effect. The resistivity measurement of TNO films reveals that the Nb doping improves the electrical conductivity of the deposited films compared to the undoped one. The best value was observed for films deposited at 4 wt% Nb. |
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| title_short |
Structural, optical and electrical investigations on Nb doped $ TiO_{2} $ radio-frequency sputtered thin films from a powder target |
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Chaabouni, F. Presmanes, L. Thimont, Y. Abaab, M. Barnabe, A. Tailhades, P. |
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| score |
7.4015436 |