Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells
Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor material...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Qingduan [verfasserIn] Liu, Xin [verfasserIn] Zou, Jizhao [verfasserIn] Chen, Dongcheng [verfasserIn] Su, Shi-Jian [verfasserIn] Zeng, Xierong [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2016 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 28(2016), 6 vom: 09. Dez., Seite 5006-5013 |
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| Übergeordnetes Werk: |
volume:28 ; year:2016 ; number:6 ; day:09 ; month:12 ; pages:5006-5013 |
| Links: |
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| DOI / URN: |
10.1007/s10854-016-6156-z |
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| Katalog-ID: |
SPR014053276 |
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| 520 | |a Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. | ||
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| 700 | 1 | |a Su, Shi-Jian |e verfasserin |4 aut | |
| 700 | 1 | |a Zeng, Xierong |e verfasserin |4 aut | |
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10.1007/s10854-016-6156-z doi (DE-627)SPR014053276 (SPR)s10854-016-6156-z-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Li, Qingduan verfasserin aut Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 Liu, Xin verfasserin aut Zou, Jizhao verfasserin aut Chen, Dongcheng verfasserin aut Su, Shi-Jian verfasserin aut Zeng, Xierong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 28(2016), 6 vom: 09. Dez., Seite 5006-5013 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 https://dx.doi.org/10.1007/s10854-016-6156-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 28 2016 6 09 12 5006-5013 |
| spelling |
10.1007/s10854-016-6156-z doi (DE-627)SPR014053276 (SPR)s10854-016-6156-z-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Li, Qingduan verfasserin aut Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 Liu, Xin verfasserin aut Zou, Jizhao verfasserin aut Chen, Dongcheng verfasserin aut Su, Shi-Jian verfasserin aut Zeng, Xierong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 28(2016), 6 vom: 09. Dez., Seite 5006-5013 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 https://dx.doi.org/10.1007/s10854-016-6156-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 28 2016 6 09 12 5006-5013 |
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10.1007/s10854-016-6156-z doi (DE-627)SPR014053276 (SPR)s10854-016-6156-z-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Li, Qingduan verfasserin aut Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 Liu, Xin verfasserin aut Zou, Jizhao verfasserin aut Chen, Dongcheng verfasserin aut Su, Shi-Jian verfasserin aut Zeng, Xierong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 28(2016), 6 vom: 09. Dez., Seite 5006-5013 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 https://dx.doi.org/10.1007/s10854-016-6156-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 28 2016 6 09 12 5006-5013 |
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10.1007/s10854-016-6156-z doi (DE-627)SPR014053276 (SPR)s10854-016-6156-z-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Li, Qingduan verfasserin aut Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 Liu, Xin verfasserin aut Zou, Jizhao verfasserin aut Chen, Dongcheng verfasserin aut Su, Shi-Jian verfasserin aut Zeng, Xierong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 28(2016), 6 vom: 09. Dez., Seite 5006-5013 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 https://dx.doi.org/10.1007/s10854-016-6156-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 28 2016 6 09 12 5006-5013 |
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10.1007/s10854-016-6156-z doi (DE-627)SPR014053276 (SPR)s10854-016-6156-z-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Li, Qingduan verfasserin aut Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 Liu, Xin verfasserin aut Zou, Jizhao verfasserin aut Chen, Dongcheng verfasserin aut Su, Shi-Jian verfasserin aut Zeng, Xierong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 28(2016), 6 vom: 09. Dez., Seite 5006-5013 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 https://dx.doi.org/10.1007/s10854-016-6156-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 28 2016 6 09 12 5006-5013 |
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Enthalten in Journal of materials science 28(2016), 6 vom: 09. Dez., Seite 5006-5013 volume:28 year:2016 number:6 day:09 month:12 pages:5006-5013 |
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Charge Recombination Charge Generation Dark Current Density Space Charge Limited Current Acceptor Material |
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Li, Qingduan @@aut@@ Liu, Xin @@aut@@ Zou, Jizhao @@aut@@ Chen, Dongcheng @@aut@@ Su, Shi-Jian @@aut@@ Zeng, Xierong @@aut@@ |
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Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Charge Recombination</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Charge Generation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dark Current Density</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Space Charge Limited Current</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Acceptor Material</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Liu, Xin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zou, Jizhao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Dongcheng</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Su, Shi-Jian</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Zeng, Xierong</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of materials science</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990</subfield><subfield code="g">28(2016), 6 vom: 09. 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|
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Li, Qingduan |
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Li, Qingduan ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Charge Recombination misc Charge Generation misc Dark Current Density misc Space Charge Limited Current misc Acceptor Material Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells Charge Recombination (dpeaa)DE-He213 Charge Generation (dpeaa)DE-He213 Dark Current Density (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Acceptor Material (dpeaa)DE-He213 |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Charge Recombination misc Charge Generation misc Dark Current Density misc Space Charge Limited Current misc Acceptor Material |
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ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 misc Charge Recombination misc Charge Generation misc Dark Current Density misc Space Charge Limited Current misc Acceptor Material |
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Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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Li, Qingduan |
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Li, Qingduan Liu, Xin Zou, Jizhao Chen, Dongcheng Su, Shi-Jian Zeng, Xierong |
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influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. |
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Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. |
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Abstract A model system is presented to investigate the influence of fullerene-based acceptor materials on the performance of small molecule organic solar cells (SM-OSCs). Two indacenodithiophene-(IDT)-cored small molecules and one diketopyrrolopyrrole-(DPP)-cored molecule are used as donor materials, and two most widely applicable fullerene-based acceptors, [6,6]-phenyl-C61(71)-butyric acid methyl esters ($ PC_{61(71)} $BM) are used as the acceptor material, respectively. The charge generation, transport, and recombination behaviors were studied under various irradiation intensities, and these parameters are relevant to device performance. The transient photocurrent and transient photovoltage operation are utilized to directly compare the photo-induced absorption, charge generation, and charge recombination properties of the corresponding blend films. Our results indicate that different fullerene derivatives not only affect the device performance with their different light absorption abilities but also have roles in charge generation and charge recombination, which greatly helps to understand how to select a better fullerene-based acceptor for the high-performance SM-OSCs. |
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Influence of fullerene-based acceptor materials on the performance of indacenodithiophene-cored small molecule bulk heterojunction organic solar cells |
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| score |
7.398695 |