Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter

Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the...
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Autor*in:	Dong, Peng [verfasserIn] Jiang, Tingting [verfasserIn] Yang, Deren [verfasserIn] Yu, Xuegong [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Übergeordnetes Werk:	Enthalten in: Journal of materials science - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990, 30(2019), 14 vom: 29. Juni, Seite 13820-13825
Übergeordnetes Werk:	volume:30 ; year:2019 ; number:14 ; day:29 ; month:06 ; pages:13820-13825

Links:	Volltext

DOI / URN:	10.1007/s10854-019-01765-4

Katalog-ID:	SPR014088266

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520			\|a Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%.
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matchkey_str	article:1573482X:2019----::piiepopoudfuinrcsadefracipoeetfsslrelylmnt
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publishDate	2019
allfields	10.1007/s10854-019-01765-4 doi (DE-627)SPR014088266 (SPR)s10854-019-01765-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Dong, Peng verfasserin aut Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%. Jiang, Tingting verfasserin aut Yang, Deren verfasserin aut Yu, Xuegong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 30(2019), 14 vom: 29. Juni, Seite 13820-13825 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825 https://dx.doi.org/10.1007/s10854-019-01765-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 30 2019 14 29 06 13820-13825
spelling	10.1007/s10854-019-01765-4 doi (DE-627)SPR014088266 (SPR)s10854-019-01765-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Dong, Peng verfasserin aut Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%. Jiang, Tingting verfasserin aut Yang, Deren verfasserin aut Yu, Xuegong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 30(2019), 14 vom: 29. Juni, Seite 13820-13825 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825 https://dx.doi.org/10.1007/s10854-019-01765-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 30 2019 14 29 06 13820-13825
allfields_unstemmed	10.1007/s10854-019-01765-4 doi (DE-627)SPR014088266 (SPR)s10854-019-01765-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Dong, Peng verfasserin aut Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%. Jiang, Tingting verfasserin aut Yang, Deren verfasserin aut Yu, Xuegong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 30(2019), 14 vom: 29. Juni, Seite 13820-13825 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825 https://dx.doi.org/10.1007/s10854-019-01765-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 30 2019 14 29 06 13820-13825
allfieldsGer	10.1007/s10854-019-01765-4 doi (DE-627)SPR014088266 (SPR)s10854-019-01765-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Dong, Peng verfasserin aut Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%. Jiang, Tingting verfasserin aut Yang, Deren verfasserin aut Yu, Xuegong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 30(2019), 14 vom: 29. Juni, Seite 13820-13825 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825 https://dx.doi.org/10.1007/s10854-019-01765-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 30 2019 14 29 06 13820-13825
allfieldsSound	10.1007/s10854-019-01765-4 doi (DE-627)SPR014088266 (SPR)s10854-019-01765-4-e DE-627 ger DE-627 rakwb eng 600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Dong, Peng verfasserin aut Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%. Jiang, Tingting verfasserin aut Yang, Deren verfasserin aut Yu, Xuegong verfasserin aut Enthalten in Journal of materials science Dordrecht [u.a.] : Springer Science + Business Media B.V, 1990 30(2019), 14 vom: 29. Juni, Seite 13820-13825 (DE-627)317827154 (DE-600)2016994-2 1573-482X nnns volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825 https://dx.doi.org/10.1007/s10854-019-01765-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.61 ASE 51.10 ASE 51.40 ASE 53.09 ASE AR 30 2019 14 29 06 13820-13825
language	English
source	Enthalten in Journal of materials science 30(2019), 14 vom: 29. Juni, Seite 13820-13825 volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825
sourceStr	Enthalten in Journal of materials science 30(2019), 14 vom: 29. Juni, Seite 13820-13825 volume:30 year:2019 number:14 day:29 month:06 pages:13820-13825
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container_title	Journal of materials science
authorswithroles_txt_mv	Dong, Peng @@aut@@ Jiang, Tingting @@aut@@ Yang, Deren @@aut@@ Yu, Xuegong @@aut@@
publishDateDaySort_date	2019-06-29T00:00:00Z
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author	Dong, Peng
spellingShingle	Dong, Peng ddc 600 bkl 33.61 bkl 51.10 bkl 51.40 bkl 53.09 Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
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topic_title	600 670 620 ASE 33.61 bkl 51.10 bkl 51.40 bkl 53.09 bkl Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
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title	Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
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title_full	Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
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author_browse	Dong, Peng Jiang, Tingting Yang, Deren Yu, Xuegong
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title_sort	optimized phosphorus diffusion process and performance improvement of c-si solar cell by eliminating sip precipitates in the emitter
title_auth	Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
abstract	Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%.
abstractGer	Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%.
abstract_unstemmed	Abstract Phosphorus diffusion is the most common way to form the emitter for p-type crystalline silicon (c-Si) based solar cells. The emitter region is usually known as dead layer, which may result in the band gap narrowing and higher carrier recombination. In this work we have demonstrated that the SiP precipitates are usually formed in the emitter of c-Si during phosphorus diffusion process, which can become the recombination centers for the minority carriers and therefore degrade the performance of c-Si solar cells. By a post-anneal treatment or a higher temperature diffusion with lower concentration of phosphorus source, the SiP precipitates in the emitter region can be effectively eliminated. As a result, the corresponding solar cell based on the modified phosphorus diffusion process exhibits a higher conversion efficiency than the conventional one by a value of 0.2%.
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title_short	Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter
url	https://dx.doi.org/10.1007/s10854-019-01765-4
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Optimized phosphorus diffusion process and performance improvement of c-Si solar cell by eliminating SiP precipitates in the emitter

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