Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model
Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losse...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Andrianov, V. A. [verfasserIn] Filippenko, L. V. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of low temperature physics - Dordrecht : Springer Science + Business Media B.V., 1969, 167(2012), 3-4 vom: 26. Jan., Seite 404-409 |
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| Übergeordnetes Werk: |
volume:167 ; year:2012 ; number:3-4 ; day:26 ; month:01 ; pages:404-409 |
| Links: |
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| DOI / URN: |
10.1007/s10909-012-0525-7 |
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| Katalog-ID: |
SPR014516055 |
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| 520 | |a Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. | ||
| 650 | 4 | |a Detectors |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Superconducting tunnel junctions |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a X-rays |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Quasiparticles |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Recombination |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Phonons |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Energy resolution |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Filippenko, L. V. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Journal of low temperature physics |d Dordrecht : Springer Science + Business Media B.V., 1969 |g 167(2012), 3-4 vom: 26. Jan., Seite 404-409 |w (DE-627)320575411 |w (DE-600)2016984-X |x 1573-7357 |7 nnns |
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2012 |
| allfields |
10.1007/s10909-012-0525-7 doi (DE-627)SPR014516055 (SPR)s10909-012-0525-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Andrianov, V. A. verfasserin aut Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 Filippenko, L. V. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 167(2012), 3-4 vom: 26. Jan., Seite 404-409 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 https://dx.doi.org/10.1007/s10909-012-0525-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 167 2012 3-4 26 01 404-409 |
| spelling |
10.1007/s10909-012-0525-7 doi (DE-627)SPR014516055 (SPR)s10909-012-0525-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Andrianov, V. A. verfasserin aut Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 Filippenko, L. V. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 167(2012), 3-4 vom: 26. Jan., Seite 404-409 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 https://dx.doi.org/10.1007/s10909-012-0525-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 167 2012 3-4 26 01 404-409 |
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10.1007/s10909-012-0525-7 doi (DE-627)SPR014516055 (SPR)s10909-012-0525-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Andrianov, V. A. verfasserin aut Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 Filippenko, L. V. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 167(2012), 3-4 vom: 26. Jan., Seite 404-409 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 https://dx.doi.org/10.1007/s10909-012-0525-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 167 2012 3-4 26 01 404-409 |
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10.1007/s10909-012-0525-7 doi (DE-627)SPR014516055 (SPR)s10909-012-0525-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Andrianov, V. A. verfasserin aut Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 Filippenko, L. V. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 167(2012), 3-4 vom: 26. Jan., Seite 404-409 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 https://dx.doi.org/10.1007/s10909-012-0525-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 167 2012 3-4 26 01 404-409 |
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10.1007/s10909-012-0525-7 doi (DE-627)SPR014516055 (SPR)s10909-012-0525-7-e DE-627 ger DE-627 rakwb eng 530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Andrianov, V. A. verfasserin aut Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 Filippenko, L. V. verfasserin aut Enthalten in Journal of low temperature physics Dordrecht : Springer Science + Business Media B.V., 1969 167(2012), 3-4 vom: 26. Jan., Seite 404-409 (DE-627)320575411 (DE-600)2016984-X 1573-7357 nnns volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 https://dx.doi.org/10.1007/s10909-012-0525-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.09 ASE 33.30 ASE 33.60 ASE AR 167 2012 3-4 26 01 404-409 |
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Enthalten in Journal of low temperature physics 167(2012), 3-4 vom: 26. Jan., Seite 404-409 volume:167 year:2012 number:3-4 day:26 month:01 pages:404-409 |
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Andrianov, V. A. @@aut@@ Filippenko, L. V. @@aut@@ |
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|
| author |
Andrianov, V. A. |
| spellingShingle |
Andrianov, V. A. ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Detectors misc Superconducting tunnel junctions misc X-rays misc Quasiparticles misc Recombination misc Phonons misc Energy resolution Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model |
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530 ASE 33.09 bkl 33.30 bkl 33.60 bkl Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model Detectors (dpeaa)DE-He213 Superconducting tunnel junctions (dpeaa)DE-He213 X-rays (dpeaa)DE-He213 Quasiparticles (dpeaa)DE-He213 Recombination (dpeaa)DE-He213 Phonons (dpeaa)DE-He213 Energy resolution (dpeaa)DE-He213 |
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ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Detectors misc Superconducting tunnel junctions misc X-rays misc Quasiparticles misc Recombination misc Phonons misc Energy resolution |
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ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Detectors misc Superconducting tunnel junctions misc X-rays misc Quasiparticles misc Recombination misc Phonons misc Energy resolution |
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ddc 530 bkl 33.09 bkl 33.30 bkl 33.60 misc Detectors misc Superconducting tunnel junctions misc X-rays misc Quasiparticles misc Recombination misc Phonons misc Energy resolution |
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Journal of low temperature physics |
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Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model |
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Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model |
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Andrianov, V. A. |
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Journal of low temperature physics |
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eng |
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2012 |
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Andrianov, V. A. Filippenko, L. V. |
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530 ASE 33.09 bkl 33.30 bkl 33.60 bkl |
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Elektronische Aufsätze |
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Andrianov, V. A. |
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10.1007/s10909-012-0525-7 |
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verfasserin |
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energy resolution of stj x-ray detectors with killed electrode. simple model |
| title_auth |
Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model |
| abstract |
Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. |
| abstractGer |
Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. |
| abstract_unstemmed |
Abstract Superconducting tunnel junctions X-ray detectors Ti/Nb/Al,$ AlO_{x} $/Al/Nb(2)/NbN with killed Ti/Nb electrode was studied as a function of bias voltage, energy of the absorbed quantum, and thickness of the Nb(2) layer. The data was compared with a simple diffusion model including the losses of excess quasiparticles due to self-recombination. It was shown that increasing of the electrode thickness reduces the self-recombination contribution and improves the linearity of the detector response. |
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Energy Resolution of STJ X-Ray Detectors with Killed Electrode. Simple Model |
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https://dx.doi.org/10.1007/s10909-012-0525-7 |
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Filippenko, L. V. |
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| doi_str |
10.1007/s10909-012-0525-7 |
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2024-07-04T02:04:31.336Z |
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| score |
7.400199 |