Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor

Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Sun, Jian [verfasserIn] Kosel, Jürgen [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	Extraordinary magnetoresistance Magnetoresistance Magnetic sensor FEM Contact resistivity

Übergeordnetes Werk:	Enthalten in: Journal of superconductivity - Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988, 25(2011), 8 vom: 06. Aug., Seite 2749-2752
Übergeordnetes Werk:	volume:25 ; year:2011 ; number:8 ; day:06 ; month:08 ; pages:2749-2752

Links:	Volltext

DOI / URN:	10.1007/s10948-011-1256-8

Katalog-ID:	SPR014878941

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520			\|a Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate.
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allfields	10.1007/s10948-011-1256-8 doi (DE-627)SPR014878941 (SPR)s10948-011-1256-8-e DE-627 ger DE-627 rakwb eng 530 ASE 33.74 bkl Sun, Jian verfasserin aut Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213 Kosel, Jürgen verfasserin aut Enthalten in Journal of superconductivity Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988 25(2011), 8 vom: 06. Aug., Seite 2749-2752 (DE-627)313651175 (DE-600)2000540-4 1572-9605 nnns volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752 https://dx.doi.org/10.1007/s10948-011-1256-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.74 ASE AR 25 2011 8 06 08 2749-2752
spelling	10.1007/s10948-011-1256-8 doi (DE-627)SPR014878941 (SPR)s10948-011-1256-8-e DE-627 ger DE-627 rakwb eng 530 ASE 33.74 bkl Sun, Jian verfasserin aut Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213 Kosel, Jürgen verfasserin aut Enthalten in Journal of superconductivity Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988 25(2011), 8 vom: 06. Aug., Seite 2749-2752 (DE-627)313651175 (DE-600)2000540-4 1572-9605 nnns volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752 https://dx.doi.org/10.1007/s10948-011-1256-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.74 ASE AR 25 2011 8 06 08 2749-2752
allfields_unstemmed	10.1007/s10948-011-1256-8 doi (DE-627)SPR014878941 (SPR)s10948-011-1256-8-e DE-627 ger DE-627 rakwb eng 530 ASE 33.74 bkl Sun, Jian verfasserin aut Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213 Kosel, Jürgen verfasserin aut Enthalten in Journal of superconductivity Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988 25(2011), 8 vom: 06. Aug., Seite 2749-2752 (DE-627)313651175 (DE-600)2000540-4 1572-9605 nnns volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752 https://dx.doi.org/10.1007/s10948-011-1256-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.74 ASE AR 25 2011 8 06 08 2749-2752
allfieldsGer	10.1007/s10948-011-1256-8 doi (DE-627)SPR014878941 (SPR)s10948-011-1256-8-e DE-627 ger DE-627 rakwb eng 530 ASE 33.74 bkl Sun, Jian verfasserin aut Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213 Kosel, Jürgen verfasserin aut Enthalten in Journal of superconductivity Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988 25(2011), 8 vom: 06. Aug., Seite 2749-2752 (DE-627)313651175 (DE-600)2000540-4 1572-9605 nnns volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752 https://dx.doi.org/10.1007/s10948-011-1256-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.74 ASE AR 25 2011 8 06 08 2749-2752
allfieldsSound	10.1007/s10948-011-1256-8 doi (DE-627)SPR014878941 (SPR)s10948-011-1256-8-e DE-627 ger DE-627 rakwb eng 530 ASE 33.74 bkl Sun, Jian verfasserin aut Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate. Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213 Kosel, Jürgen verfasserin aut Enthalten in Journal of superconductivity Dordrecht [u.a.] : Springer Science + Business Media B.V., 1988 25(2011), 8 vom: 06. Aug., Seite 2749-2752 (DE-627)313651175 (DE-600)2000540-4 1572-9605 nnns volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752 https://dx.doi.org/10.1007/s10948-011-1256-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 33.74 ASE AR 25 2011 8 06 08 2749-2752
language	English
source	Enthalten in Journal of superconductivity 25(2011), 8 vom: 06. Aug., Seite 2749-2752 volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752
sourceStr	Enthalten in Journal of superconductivity 25(2011), 8 vom: 06. Aug., Seite 2749-2752 volume:25 year:2011 number:8 day:06 month:08 pages:2749-2752
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Extraordinary magnetoresistance Magnetoresistance Magnetic sensor FEM Contact resistivity
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container_title	Journal of superconductivity
authorswithroles_txt_mv	Sun, Jian @@aut@@ Kosel, Jürgen @@aut@@
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author	Sun, Jian
spellingShingle	Sun, Jian ddc 530 bkl 33.74 misc Extraordinary magnetoresistance misc Magnetoresistance misc Magnetic sensor misc FEM misc Contact resistivity Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor
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topic_title	530 ASE 33.74 bkl Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor Extraordinary magnetoresistance (dpeaa)DE-He213 Magnetoresistance (dpeaa)DE-He213 Magnetic sensor (dpeaa)DE-He213 FEM (dpeaa)DE-He213 Contact resistivity (dpeaa)DE-He213
topic	ddc 530 bkl 33.74 misc Extraordinary magnetoresistance misc Magnetoresistance misc Magnetic sensor misc FEM misc Contact resistivity
topic_unstemmed	ddc 530 bkl 33.74 misc Extraordinary magnetoresistance misc Magnetoresistance misc Magnetic sensor misc FEM misc Contact resistivity
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title	Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor
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title_full	Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor
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title_sort	finite element analysis on the influence of contact resistivity in an extraordinary magnetoresistance magnetic field micro sensor
title_auth	Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor
abstract	Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate.
abstractGer	Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate.
abstract_unstemmed	Abstract In this paper, an extraordinary magnetoresistance (EMR) device made of an InSb/Au hybrid structure was investigated. Those devices have a large potential in becoming a new generation of highly sensitive and cheap magnetic micro sensors. A crucial factor for the performance is the interface between the InSb and Au, which suffers from a certain contact resistivity. The Finite Element Method (FEM) was employed to simulate the current redistribution in the device, under an applied magnetic field. Specifically, the influence of the contact resistivity between the InSb bulk and Au shunt was studied. In a device with optimized geometry and without contact resistivity between the layers of InSb and Au, the EMR effect and the sensitivity show values of 1.89×$ 10^{4} $% and 0.02%/($ 10^{−4} $ T), respectively, at 1 Tesla. For values of contact resistivity up to $ 10^{−8} $ Ω $ cm^{2} $ the EMR effect is almost constant, while for higher values the EMR effect decreases exponentially. However, the sensitivity of the device does not decrease until 5×$ 10^{−6} $ Ω $ cm^{2} $ of contact resistivity. Only beyond this value the sensitivity, which in most cases is associated with the performance of the device, will deteriorate.
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title_short	Finite Element Analysis on the Influence of Contact Resistivity in an Extraordinary Magnetoresistance Magnetic Field Micro Sensor
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