Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution
Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped S...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Sun, Hui [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2007 |
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| Schlagwörter: |
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| Anmerkung: |
© Springer Science+Business Media, LLC 2007 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of sol gel science and technology - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993, 43(2007), 1 vom: 13. Apr., Seite 125-129 |
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| Übergeordnetes Werk: |
volume:43 ; year:2007 ; number:1 ; day:13 ; month:04 ; pages:125-129 |
| Links: |
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| DOI / URN: |
10.1007/s10971-007-1543-9 |
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| Katalog-ID: |
SPR015238172 |
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| 100 | 1 | |a Sun, Hui |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
| 264 | 1 | |c 2007 | |
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| 520 | |a Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. | ||
| 650 | 4 | |a Ferroelectrics |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Sol–gel method |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Remnant polarization |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Chen, Xiao-Bing |4 aut | |
| 700 | 1 | |a Zhu, Jun |4 aut | |
| 700 | 1 | |a He, Jun-Hui |4 aut | |
| 700 | 1 | |a Qian, Ya-Feng |4 aut | |
| 700 | 1 | |a Fang, Hong |4 aut | |
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10.1007/s10971-007-1543-9 doi (DE-627)SPR015238172 (SPR)s10971-007-1543-9-e DE-627 ger DE-627 rakwb eng Sun, Hui verfasserin aut Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2007 Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 Chen, Xiao-Bing aut Zhu, Jun aut He, Jun-Hui aut Qian, Ya-Feng aut Fang, Hong aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 43(2007), 1 vom: 13. Apr., Seite 125-129 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:43 year:2007 number:1 day:13 month:04 pages:125-129 https://dx.doi.org/10.1007/s10971-007-1543-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2007 1 13 04 125-129 |
| spelling |
10.1007/s10971-007-1543-9 doi (DE-627)SPR015238172 (SPR)s10971-007-1543-9-e DE-627 ger DE-627 rakwb eng Sun, Hui verfasserin aut Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2007 Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 Chen, Xiao-Bing aut Zhu, Jun aut He, Jun-Hui aut Qian, Ya-Feng aut Fang, Hong aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 43(2007), 1 vom: 13. Apr., Seite 125-129 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:43 year:2007 number:1 day:13 month:04 pages:125-129 https://dx.doi.org/10.1007/s10971-007-1543-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2007 1 13 04 125-129 |
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10.1007/s10971-007-1543-9 doi (DE-627)SPR015238172 (SPR)s10971-007-1543-9-e DE-627 ger DE-627 rakwb eng Sun, Hui verfasserin aut Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2007 Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 Chen, Xiao-Bing aut Zhu, Jun aut He, Jun-Hui aut Qian, Ya-Feng aut Fang, Hong aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 43(2007), 1 vom: 13. Apr., Seite 125-129 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:43 year:2007 number:1 day:13 month:04 pages:125-129 https://dx.doi.org/10.1007/s10971-007-1543-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2007 1 13 04 125-129 |
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10.1007/s10971-007-1543-9 doi (DE-627)SPR015238172 (SPR)s10971-007-1543-9-e DE-627 ger DE-627 rakwb eng Sun, Hui verfasserin aut Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2007 Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 Chen, Xiao-Bing aut Zhu, Jun aut He, Jun-Hui aut Qian, Ya-Feng aut Fang, Hong aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 43(2007), 1 vom: 13. Apr., Seite 125-129 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:43 year:2007 number:1 day:13 month:04 pages:125-129 https://dx.doi.org/10.1007/s10971-007-1543-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2007 1 13 04 125-129 |
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10.1007/s10971-007-1543-9 doi (DE-627)SPR015238172 (SPR)s10971-007-1543-9-e DE-627 ger DE-627 rakwb eng Sun, Hui verfasserin aut Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Springer Science+Business Media, LLC 2007 Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 Chen, Xiao-Bing aut Zhu, Jun aut He, Jun-Hui aut Qian, Ya-Feng aut Fang, Hong aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 43(2007), 1 vom: 13. Apr., Seite 125-129 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:43 year:2007 number:1 day:13 month:04 pages:125-129 https://dx.doi.org/10.1007/s10971-007-1543-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2007 1 13 04 125-129 |
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Enthalten in Journal of sol gel science and technology 43(2007), 1 vom: 13. Apr., Seite 125-129 volume:43 year:2007 number:1 day:13 month:04 pages:125-129 |
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Enthalten in Journal of sol gel science and technology 43(2007), 1 vom: 13. Apr., Seite 125-129 volume:43 year:2007 number:1 day:13 month:04 pages:125-129 |
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Sun, Hui @@aut@@ Chen, Xiao-Bing @@aut@@ Zhu, Jun @@aut@@ He, Jun-Hui @@aut@@ Qian, Ya-Feng @@aut@@ Fang, Hong @@aut@@ |
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Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). 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|
| author |
Sun, Hui |
| spellingShingle |
Sun, Hui misc Ferroelectrics misc Sol–gel method misc Remnant polarization Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
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Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution Ferroelectrics (dpeaa)DE-He213 Sol–gel method (dpeaa)DE-He213 Remnant polarization (dpeaa)DE-He213 |
| topic |
misc Ferroelectrics misc Sol–gel method misc Remnant polarization |
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misc Ferroelectrics misc Sol–gel method misc Remnant polarization |
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misc Ferroelectrics misc Sol–gel method misc Remnant polarization |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
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(DE-627)SPR015238172 (SPR)s10971-007-1543-9-e |
| title_full |
Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
| author_sort |
Sun, Hui |
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Journal of sol gel science and technology |
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Journal of sol gel science and technology |
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2007 |
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Sun, Hui Chen, Xiao-Bing Zhu, Jun He, Jun-Hui Qian, Ya-Feng Fang, Hong |
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Elektronische Aufsätze |
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Sun, Hui |
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10.1007/s10971-007-1543-9 |
| title_sort |
notable enlargement of remnant polarization for fatigue-free $ srbi_{4} %$ ti_{4} %$ o_{15} $ thin films by la-substitution |
| title_auth |
Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
| abstract |
Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. © Springer Science+Business Media, LLC 2007 |
| abstractGer |
Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. © Springer Science+Business Media, LLC 2007 |
| abstract_unstemmed |
Abstract La-doped $ SrBi_{4} %$ Ti_{4} %$ O_{15} $, $ SrBi_{4–x} %$ La_{x} %$ Ti_{4} %$ O_{15} $ (SBLT-x, x = 0.00, 0.10 and 0.25), thin films have been successfully prepared by the sol–gel method. Structures, surface morphology and ferroelectric properties were investigated. Compared with undoped SBTi, SBLT-0.10 shows a notable larger remnant polarization (2Pr = 46 μC/$ cm^{2} $). Meanwhile, the SBLT-0.10 film shows little change of Pnv and −Pnv up to 4.4 × $ 10^{10} $ switching cycles, suggesting an excellent fatigue-endurance characteristics. © Springer Science+Business Media, LLC 2007 |
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| title_short |
Notable enlargement of remnant polarization for fatigue-free $ SrBi_{4} %$ Ti_{4} %$ O_{15} $ thin films by La-substitution |
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https://dx.doi.org/10.1007/s10971-007-1543-9 |
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Chen, Xiao-Bing Zhu, Jun He, Jun-Hui Qian, Ya-Feng Fang, Hong |
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Chen, Xiao-Bing Zhu, Jun He, Jun-Hui Qian, Ya-Feng Fang, Hong |
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| doi_str |
10.1007/s10971-007-1543-9 |
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2024-07-03T14:52:12.055Z |
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