Fabrication of PZT/CuO composite films and their photovoltaic properties
Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Song, Yang [verfasserIn] Li, Lingwei [verfasserIn] Chen, Yuanqing [verfasserIn] Li, Fengzhu [verfasserIn] Qu, Wenwen [verfasserIn] Wu, Huimin [verfasserIn] Yerramilli, Aditya S. [verfasserIn] Alford, T. L. [verfasserIn] Zheng, Haiwu [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of sol gel science and technology - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993, 87(2018), 2 vom: 23. Juni, Seite 285-291 |
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| Übergeordnetes Werk: |
volume:87 ; year:2018 ; number:2 ; day:23 ; month:06 ; pages:285-291 |
| Links: |
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| DOI / URN: |
10.1007/s10971-018-4727-6 |
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| Katalog-ID: |
SPR015269868 |
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| 520 | |a Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. | ||
| 520 | |a Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored | ||
| 650 | 4 | |a Photovoltaic effect |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Ferroelectric thin film |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a PZT |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a CuO |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Li, Lingwei |e verfasserin |4 aut | |
| 700 | 1 | |a Chen, Yuanqing |e verfasserin |4 aut | |
| 700 | 1 | |a Li, Fengzhu |e verfasserin |4 aut | |
| 700 | 1 | |a Qu, Wenwen |e verfasserin |4 aut | |
| 700 | 1 | |a Wu, Huimin |e verfasserin |4 aut | |
| 700 | 1 | |a Yerramilli, Aditya S. |e verfasserin |4 aut | |
| 700 | 1 | |a Alford, T. L. |e verfasserin |4 aut | |
| 700 | 1 | |a Zheng, Haiwu |e verfasserin |4 aut | |
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10.1007/s10971-018-4727-6 doi (DE-627)SPR015269868 (SPR)s10971-018-4727-6-e DE-627 ger DE-627 rakwb eng 600 670 ASE 35.18 bkl 51.60 bkl Song, Yang verfasserin aut Fabrication of PZT/CuO composite films and their photovoltaic properties 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 Li, Lingwei verfasserin aut Chen, Yuanqing verfasserin aut Li, Fengzhu verfasserin aut Qu, Wenwen verfasserin aut Wu, Huimin verfasserin aut Yerramilli, Aditya S. verfasserin aut Alford, T. L. verfasserin aut Zheng, Haiwu verfasserin aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 87(2018), 2 vom: 23. Juni, Seite 285-291 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:87 year:2018 number:2 day:23 month:06 pages:285-291 https://dx.doi.org/10.1007/s10971-018-4727-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE 51.60 ASE AR 87 2018 2 23 06 285-291 |
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10.1007/s10971-018-4727-6 doi (DE-627)SPR015269868 (SPR)s10971-018-4727-6-e DE-627 ger DE-627 rakwb eng 600 670 ASE 35.18 bkl 51.60 bkl Song, Yang verfasserin aut Fabrication of PZT/CuO composite films and their photovoltaic properties 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 Li, Lingwei verfasserin aut Chen, Yuanqing verfasserin aut Li, Fengzhu verfasserin aut Qu, Wenwen verfasserin aut Wu, Huimin verfasserin aut Yerramilli, Aditya S. verfasserin aut Alford, T. L. verfasserin aut Zheng, Haiwu verfasserin aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 87(2018), 2 vom: 23. Juni, Seite 285-291 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:87 year:2018 number:2 day:23 month:06 pages:285-291 https://dx.doi.org/10.1007/s10971-018-4727-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE 51.60 ASE AR 87 2018 2 23 06 285-291 |
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10.1007/s10971-018-4727-6 doi (DE-627)SPR015269868 (SPR)s10971-018-4727-6-e DE-627 ger DE-627 rakwb eng 600 670 ASE 35.18 bkl 51.60 bkl Song, Yang verfasserin aut Fabrication of PZT/CuO composite films and their photovoltaic properties 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 Li, Lingwei verfasserin aut Chen, Yuanqing verfasserin aut Li, Fengzhu verfasserin aut Qu, Wenwen verfasserin aut Wu, Huimin verfasserin aut Yerramilli, Aditya S. verfasserin aut Alford, T. L. verfasserin aut Zheng, Haiwu verfasserin aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 87(2018), 2 vom: 23. Juni, Seite 285-291 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:87 year:2018 number:2 day:23 month:06 pages:285-291 https://dx.doi.org/10.1007/s10971-018-4727-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE 51.60 ASE AR 87 2018 2 23 06 285-291 |
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10.1007/s10971-018-4727-6 doi (DE-627)SPR015269868 (SPR)s10971-018-4727-6-e DE-627 ger DE-627 rakwb eng 600 670 ASE 35.18 bkl 51.60 bkl Song, Yang verfasserin aut Fabrication of PZT/CuO composite films and their photovoltaic properties 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 Li, Lingwei verfasserin aut Chen, Yuanqing verfasserin aut Li, Fengzhu verfasserin aut Qu, Wenwen verfasserin aut Wu, Huimin verfasserin aut Yerramilli, Aditya S. verfasserin aut Alford, T. L. verfasserin aut Zheng, Haiwu verfasserin aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 87(2018), 2 vom: 23. Juni, Seite 285-291 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:87 year:2018 number:2 day:23 month:06 pages:285-291 https://dx.doi.org/10.1007/s10971-018-4727-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE 51.60 ASE AR 87 2018 2 23 06 285-291 |
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10.1007/s10971-018-4727-6 doi (DE-627)SPR015269868 (SPR)s10971-018-4727-6-e DE-627 ger DE-627 rakwb eng 600 670 ASE 35.18 bkl 51.60 bkl Song, Yang verfasserin aut Fabrication of PZT/CuO composite films and their photovoltaic properties 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 Li, Lingwei verfasserin aut Chen, Yuanqing verfasserin aut Li, Fengzhu verfasserin aut Qu, Wenwen verfasserin aut Wu, Huimin verfasserin aut Yerramilli, Aditya S. verfasserin aut Alford, T. L. verfasserin aut Zheng, Haiwu verfasserin aut Enthalten in Journal of sol gel science and technology Dordrecht [u.a.] : Springer Science + Business Media B.V, 1993 87(2018), 2 vom: 23. Juni, Seite 285-291 (DE-627)268757607 (DE-600)1472726-2 1573-4846 nnns volume:87 year:2018 number:2 day:23 month:06 pages:285-291 https://dx.doi.org/10.1007/s10971-018-4727-6 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.18 ASE 51.60 ASE AR 87 2018 2 23 06 285-291 |
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Photovoltaic effect Ferroelectric thin film PZT CuO |
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Song, Yang @@aut@@ Li, Lingwei @@aut@@ Chen, Yuanqing @@aut@@ Li, Fengzhu @@aut@@ Qu, Wenwen @@aut@@ Wu, Huimin @@aut@@ Yerramilli, Aditya S. @@aut@@ Alford, T. L. @@aut@@ Zheng, Haiwu @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR015269868</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111015636.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2018 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s10971-018-4727-6</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR015269868</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s10971-018-4727-6-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="a">670</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">35.18</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">51.60</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Song, Yang</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Fabrication of PZT/CuO composite films and their photovoltaic properties</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers.</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Photovoltaic effect</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ferroelectric thin film</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">PZT</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">CuO</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Lingwei</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Chen, Yuanqing</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Li, Fengzhu</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Qu, Wenwen</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Wu, Huimin</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Yerramilli, Aditya S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Alford, T. 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Song, Yang |
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Song, Yang ddc 600 bkl 35.18 bkl 51.60 misc Photovoltaic effect misc Ferroelectric thin film misc PZT misc CuO Fabrication of PZT/CuO composite films and their photovoltaic properties |
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600 670 ASE 35.18 bkl 51.60 bkl Fabrication of PZT/CuO composite films and their photovoltaic properties Photovoltaic effect (dpeaa)DE-He213 Ferroelectric thin film (dpeaa)DE-He213 PZT (dpeaa)DE-He213 CuO (dpeaa)DE-He213 |
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ddc 600 bkl 35.18 bkl 51.60 misc Photovoltaic effect misc Ferroelectric thin film misc PZT misc CuO |
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Fabrication of PZT/CuO composite films and their photovoltaic properties |
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Song, Yang Li, Lingwei Chen, Yuanqing Li, Fengzhu Qu, Wenwen Wu, Huimin Yerramilli, Aditya S. Alford, T. L. Zheng, Haiwu |
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Song, Yang |
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10.1007/s10971-018-4727-6 |
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fabrication of pzt/cuo composite films and their photovoltaic properties |
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Fabrication of PZT/CuO composite films and their photovoltaic properties |
| abstract |
Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored |
| abstractGer |
Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored |
| abstract_unstemmed |
Abstract The existence of the Schottky barriers at the top and bottom electrodes of the ferroelectric thin film sandwich structure makes it difficult to separate and collect electron-hole pairs, thus limiting the enhancement of the photocurrent. In this paper, Pb(Zr,Ti)$ O_{3} $ (PZT) and composite structure of PZT/CuO films are prepared by a sol-gel method and their photovoltaic properties have been investigated. It is found that the PZT/CuO films show a short circuit photocurrent density (JSC) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction, which plays an important role in driving the photo-generated carriers. The Ohmic contact between the interfaces of LNO/PZT and CuO/Pt also reduce the resistance of the transportation of photogenerated carriers. Furthermore, the JSC of PZT/CuO film are observed to be 0.03 and 0.013 mA/$ cm^{2} $ after upward poling and downward poling, respectively, indicating that the photocurrent can be modulated by the direction of the polarization electric field. The photovoltaic effect of composite films and its potential mechanism are also explored. This work provides an efficient approach to develop ferroelectric film based on photovoltaic devices. It is found that the PZT/CuO films show a short circuit photocurrent density ($ J_{SC} $) enhanced by nearly 6 times and power conversion efficiency (PCE) increased by six-fold when compared to those of the PZT film. The increase of photovoltaic response is due to the internal electric field of PZT/CuO p–n junction which plays an important role in driving the photogenerated carriers. Highlights PZT/CuO composite films are prepared using sol-gel methodThe photocurrent is increased when PZT is combined with CuOThe transport mechanism of the photoelectrons in PZT/CuO composite films is explored |
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Fabrication of PZT/CuO composite films and their photovoltaic properties |
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| score |
7.4021673 |