Measuring the heat evolved from individual reaction steps in atomic layer deposition
Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nilsen, O. [verfasserIn] Fjellvåg, H. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of thermal analysis and calorimetry - Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969, 105(2011), 1 vom: 21. Mai |
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| Übergeordnetes Werk: |
volume:105 ; year:2011 ; number:1 ; day:21 ; month:05 |
| Links: |
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| DOI / URN: |
10.1007/s10973-011-1630-6 |
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| Katalog-ID: |
SPR015359778 |
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| 520 | |a Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. | ||
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10.1007/s10973-011-1630-6 doi (DE-627)SPR015359778 (SPR)s10973-011-1630-6-e DE-627 ger DE-627 rakwb eng 660 ASE 35.00 bkl Nilsen, O. verfasserin aut Measuring the heat evolved from individual reaction steps in atomic layer deposition 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 Fjellvåg, H. verfasserin aut Enthalten in Journal of thermal analysis and calorimetry Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969 105(2011), 1 vom: 21. Mai (DE-627)315295422 (DE-600)2017304-0 1572-8943 nnns volume:105 year:2011 number:1 day:21 month:05 https://dx.doi.org/10.1007/s10973-011-1630-6 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.00 ASE AR 105 2011 1 21 05 |
| spelling |
10.1007/s10973-011-1630-6 doi (DE-627)SPR015359778 (SPR)s10973-011-1630-6-e DE-627 ger DE-627 rakwb eng 660 ASE 35.00 bkl Nilsen, O. verfasserin aut Measuring the heat evolved from individual reaction steps in atomic layer deposition 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 Fjellvåg, H. verfasserin aut Enthalten in Journal of thermal analysis and calorimetry Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969 105(2011), 1 vom: 21. Mai (DE-627)315295422 (DE-600)2017304-0 1572-8943 nnns volume:105 year:2011 number:1 day:21 month:05 https://dx.doi.org/10.1007/s10973-011-1630-6 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.00 ASE AR 105 2011 1 21 05 |
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10.1007/s10973-011-1630-6 doi (DE-627)SPR015359778 (SPR)s10973-011-1630-6-e DE-627 ger DE-627 rakwb eng 660 ASE 35.00 bkl Nilsen, O. verfasserin aut Measuring the heat evolved from individual reaction steps in atomic layer deposition 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 Fjellvåg, H. verfasserin aut Enthalten in Journal of thermal analysis and calorimetry Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969 105(2011), 1 vom: 21. Mai (DE-627)315295422 (DE-600)2017304-0 1572-8943 nnns volume:105 year:2011 number:1 day:21 month:05 https://dx.doi.org/10.1007/s10973-011-1630-6 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.00 ASE AR 105 2011 1 21 05 |
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10.1007/s10973-011-1630-6 doi (DE-627)SPR015359778 (SPR)s10973-011-1630-6-e DE-627 ger DE-627 rakwb eng 660 ASE 35.00 bkl Nilsen, O. verfasserin aut Measuring the heat evolved from individual reaction steps in atomic layer deposition 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 Fjellvåg, H. verfasserin aut Enthalten in Journal of thermal analysis and calorimetry Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969 105(2011), 1 vom: 21. Mai (DE-627)315295422 (DE-600)2017304-0 1572-8943 nnns volume:105 year:2011 number:1 day:21 month:05 https://dx.doi.org/10.1007/s10973-011-1630-6 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.00 ASE AR 105 2011 1 21 05 |
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10.1007/s10973-011-1630-6 doi (DE-627)SPR015359778 (SPR)s10973-011-1630-6-e DE-627 ger DE-627 rakwb eng 660 ASE 35.00 bkl Nilsen, O. verfasserin aut Measuring the heat evolved from individual reaction steps in atomic layer deposition 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 Fjellvåg, H. verfasserin aut Enthalten in Journal of thermal analysis and calorimetry Dordrecht [u.a.] : Springer Science + Business Media B.V., 1969 105(2011), 1 vom: 21. Mai (DE-627)315295422 (DE-600)2017304-0 1572-8943 nnns volume:105 year:2011 number:1 day:21 month:05 https://dx.doi.org/10.1007/s10973-011-1630-6 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.00 ASE AR 105 2011 1 21 05 |
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Enthalten in Journal of thermal analysis and calorimetry 105(2011), 1 vom: 21. Mai volume:105 year:2011 number:1 day:21 month:05 |
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Nilsen, O. @@aut@@ Fjellvåg, H. @@aut@@ |
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The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. 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Nilsen, O. |
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Nilsen, O. ddc 660 bkl 35.00 misc Thermopile misc Energetic misc ALCVD misc ALE misc ALD Measuring the heat evolved from individual reaction steps in atomic layer deposition |
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660 ASE 35.00 bkl Measuring the heat evolved from individual reaction steps in atomic layer deposition Thermopile (dpeaa)DE-He213 Energetic (dpeaa)DE-He213 ALCVD (dpeaa)DE-He213 ALE (dpeaa)DE-He213 ALD (dpeaa)DE-He213 |
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ddc 660 bkl 35.00 misc Thermopile misc Energetic misc ALCVD misc ALE misc ALD |
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Measuring the heat evolved from individual reaction steps in atomic layer deposition |
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Measuring the heat evolved from individual reaction steps in atomic layer deposition |
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measuring the heat evolved from individual reaction steps in atomic layer deposition |
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Measuring the heat evolved from individual reaction steps in atomic layer deposition |
| abstract |
Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. |
| abstractGer |
Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. |
| abstract_unstemmed |
Abstract A thermopile has been constructed for detecting heat of reaction during the individual steps taking place in the growth cycles of atomic layer deposition (ALD). The thermopile sensor consists of 64 junctions of thermocouple type K. It has successfully been applied to characterize ALD growth of $ Al_{2} %$ O_{3} $ from Al($ CH_{3} $)3 (TMA) and $ H_{2} $O, and has furthermore been applied to explore energetics of ALD growth for the following combinations of precursors: TMA + $ O_{3} $, TMA + $ O_{2} $, TMA + hydroquinone, $ TiCl_{4} $ + $ H_{2} $O, and Zn($ CH_{3} %$ CH_{2} $)2 + $ H_{2} $O. The thermopile clearly identifies exo/endothermal reaction steps, the effect of surface temperature on exposure to precursors from cold sources as well as variation in the flow of gases, and allows setting up of experiments where variations in precursors and pulsing parameters may provide mechanistic insight into the ALD growth. The sensor represents a new and complementary tool for in situ characterization of thin film growth by ALD. |
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| container_issue |
1 |
| title_short |
Measuring the heat evolved from individual reaction steps in atomic layer deposition |
| url |
https://dx.doi.org/10.1007/s10973-011-1630-6 |
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true |
| author2 |
Fjellvåg, H. |
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Fjellvåg, H. |
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c |
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| doi_str |
10.1007/s10973-011-1630-6 |
| up_date |
2024-07-03T15:43:12.366Z |
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| score |
7.399723 |