Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing
Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Chandrasekaran, Gopalakrishnan [verfasserIn] Sundararaj, Anuraj [verfasserIn] Therese, Helen Annal [verfasserIn] Jeganathan, K. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of nanoparticle research - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999, 17(2015), 7 vom: 08. Juli |
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| Übergeordnetes Werk: |
volume:17 ; year:2015 ; number:7 ; day:08 ; month:07 |
| Links: |
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| DOI / URN: |
10.1007/s11051-015-3100-8 |
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| Katalog-ID: |
SPR016089294 |
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| 520 | |a Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. | ||
| 650 | 4 | |a Nanowires and nanosheet |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Physical vapour deposition |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Electron beam rapid thermal annealing |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Gas sensing |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Detection pollutants |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Sundararaj, Anuraj |e verfasserin |4 aut | |
| 700 | 1 | |a Therese, Helen Annal |e verfasserin |4 aut | |
| 700 | 1 | |a Jeganathan, K. |e verfasserin |4 aut | |
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10.1007/s11051-015-3100-8 doi (DE-627)SPR016089294 (SPR)s11051-015-3100-8-e DE-627 ger DE-627 rakwb eng 570 ASE 51.45 bkl Chandrasekaran, Gopalakrishnan verfasserin aut Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 Sundararaj, Anuraj verfasserin aut Therese, Helen Annal verfasserin aut Jeganathan, K. verfasserin aut Enthalten in Journal of nanoparticle research Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999 17(2015), 7 vom: 08. Juli (DE-627)320575667 (DE-600)2017013-0 1572-896X nnns volume:17 year:2015 number:7 day:08 month:07 https://dx.doi.org/10.1007/s11051-015-3100-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.45 ASE AR 17 2015 7 08 07 |
| spelling |
10.1007/s11051-015-3100-8 doi (DE-627)SPR016089294 (SPR)s11051-015-3100-8-e DE-627 ger DE-627 rakwb eng 570 ASE 51.45 bkl Chandrasekaran, Gopalakrishnan verfasserin aut Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 Sundararaj, Anuraj verfasserin aut Therese, Helen Annal verfasserin aut Jeganathan, K. verfasserin aut Enthalten in Journal of nanoparticle research Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999 17(2015), 7 vom: 08. Juli (DE-627)320575667 (DE-600)2017013-0 1572-896X nnns volume:17 year:2015 number:7 day:08 month:07 https://dx.doi.org/10.1007/s11051-015-3100-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.45 ASE AR 17 2015 7 08 07 |
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10.1007/s11051-015-3100-8 doi (DE-627)SPR016089294 (SPR)s11051-015-3100-8-e DE-627 ger DE-627 rakwb eng 570 ASE 51.45 bkl Chandrasekaran, Gopalakrishnan verfasserin aut Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 Sundararaj, Anuraj verfasserin aut Therese, Helen Annal verfasserin aut Jeganathan, K. verfasserin aut Enthalten in Journal of nanoparticle research Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999 17(2015), 7 vom: 08. Juli (DE-627)320575667 (DE-600)2017013-0 1572-896X nnns volume:17 year:2015 number:7 day:08 month:07 https://dx.doi.org/10.1007/s11051-015-3100-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.45 ASE AR 17 2015 7 08 07 |
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10.1007/s11051-015-3100-8 doi (DE-627)SPR016089294 (SPR)s11051-015-3100-8-e DE-627 ger DE-627 rakwb eng 570 ASE 51.45 bkl Chandrasekaran, Gopalakrishnan verfasserin aut Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 Sundararaj, Anuraj verfasserin aut Therese, Helen Annal verfasserin aut Jeganathan, K. verfasserin aut Enthalten in Journal of nanoparticle research Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999 17(2015), 7 vom: 08. Juli (DE-627)320575667 (DE-600)2017013-0 1572-896X nnns volume:17 year:2015 number:7 day:08 month:07 https://dx.doi.org/10.1007/s11051-015-3100-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.45 ASE AR 17 2015 7 08 07 |
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10.1007/s11051-015-3100-8 doi (DE-627)SPR016089294 (SPR)s11051-015-3100-8-e DE-627 ger DE-627 rakwb eng 570 ASE 51.45 bkl Chandrasekaran, Gopalakrishnan verfasserin aut Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 Sundararaj, Anuraj verfasserin aut Therese, Helen Annal verfasserin aut Jeganathan, K. verfasserin aut Enthalten in Journal of nanoparticle research Dordrecht [u.a.] : Springer Science + Business Media B.V, 1999 17(2015), 7 vom: 08. Juli (DE-627)320575667 (DE-600)2017013-0 1572-896X nnns volume:17 year:2015 number:7 day:08 month:07 https://dx.doi.org/10.1007/s11051-015-3100-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 51.45 ASE AR 17 2015 7 08 07 |
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Nanowires and nanosheet Physical vapour deposition Electron beam rapid thermal annealing Gas sensing Detection pollutants |
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Chandrasekaran, Gopalakrishnan @@aut@@ Sundararaj, Anuraj @@aut@@ Therese, Helen Annal @@aut@@ Jeganathan, K. @@aut@@ |
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Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. 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Chandrasekaran, Gopalakrishnan |
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Chandrasekaran, Gopalakrishnan ddc 570 bkl 51.45 misc Nanowires and nanosheet misc Physical vapour deposition misc Electron beam rapid thermal annealing misc Gas sensing misc Detection pollutants Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing |
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570 ASE 51.45 bkl Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing Nanowires and nanosheet (dpeaa)DE-He213 Physical vapour deposition (dpeaa)DE-He213 Electron beam rapid thermal annealing (dpeaa)DE-He213 Gas sensing (dpeaa)DE-He213 Detection pollutants (dpeaa)DE-He213 |
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ddc 570 bkl 51.45 misc Nanowires and nanosheet misc Physical vapour deposition misc Electron beam rapid thermal annealing misc Gas sensing misc Detection pollutants |
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ddc 570 bkl 51.45 misc Nanowires and nanosheet misc Physical vapour deposition misc Electron beam rapid thermal annealing misc Gas sensing misc Detection pollutants |
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Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing |
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Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing |
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ni-catalysed $ wo_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ no_{2} $ gas sensing |
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Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing |
| abstract |
Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. |
| abstractGer |
Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. |
| abstract_unstemmed |
Abstract Ni-catalysed $ WO_{3} $ (Ni–$ WO_{3} $) nanowires and nanosheets were grown on Si (100) substrates using electron beam evaporation followed by electron beam-assisted rapid thermal annealing process. Gas-sensing measurements were performed for various concentrations of $ NO_{2} $ in dry air at a temperature range of 50–400 °C. Nanowires and nanosheets show optimum sensor response of 229 and 197 at operating temperatures of 200 and 250 °C, respectively, for 100 ppm of $ NO_{2} $ exposure. Nanowires demonstrated a rapid response time of 66 s, but a slow recovery time of 204 s owing to poor rate of desorption of the adsorbed $ NO_{2} $ gas molecules from the internal porous structure of nanowires. In contrast, the recovery time for nanosheet was 126 s due to higher desorption rate of the adhered $ NO_{2} $ molecules associated with low surface area and less porous structure of nanosheet. The gas-sensing mechanism of $ WO_{3} $ nanostructure is discussed briefly. |
| collection_details |
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| container_issue |
7 |
| title_short |
Ni-catalysed $ WO_{3} $ nanostructures grown by electron beam rapid thermal annealing for $ NO_{2} $ gas sensing |
| url |
https://dx.doi.org/10.1007/s11051-015-3100-8 |
| remote_bool |
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| author2 |
Sundararaj, Anuraj Therese, Helen Annal Jeganathan, K. |
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Sundararaj, Anuraj Therese, Helen Annal Jeganathan, K. |
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| doi_str |
10.1007/s11051-015-3100-8 |
| up_date |
2024-07-03T20:42:20.575Z |
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| score |
7.400193 |