Delayed breakdown diode and its optimal design for solid state picosecond closing switch
Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulatio...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhang, Fei [verfasserIn] Li, Chengfang [verfasserIn] Shi, Lina [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2004 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969, 36(2004), 15 vom: Dez., Seite 1253-1261 |
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| Übergeordnetes Werk: |
volume:36 ; year:2004 ; number:15 ; month:12 ; pages:1253-1261 |
| Links: |
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| DOI / URN: |
10.1007/s11082-004-8311-7 |
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| Katalog-ID: |
SPR016452798 |
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| 245 | 1 | 0 | |a Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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| 520 | |a Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. | ||
| 650 | 4 | |a delayed breakdown diode |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a picosecond switch |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a semiconductor closing switch |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Li, Chengfang |e verfasserin |4 aut | |
| 700 | 1 | |a Shi, Lina |e verfasserin |4 aut | |
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| 773 | 1 | 8 | |g volume:36 |g year:2004 |g number:15 |g month:12 |g pages:1253-1261 |
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| allfields |
10.1007/s11082-004-8311-7 doi (DE-627)SPR016452798 (SPR)s11082-004-8311-7-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zhang, Fei verfasserin aut Delayed breakdown diode and its optimal design for solid state picosecond closing switch 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 Li, Chengfang verfasserin aut Shi, Lina verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 36(2004), 15 vom: Dez., Seite 1253-1261 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:36 year:2004 number:15 month:12 pages:1253-1261 https://dx.doi.org/10.1007/s11082-004-8311-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 36 2004 15 12 1253-1261 |
| spelling |
10.1007/s11082-004-8311-7 doi (DE-627)SPR016452798 (SPR)s11082-004-8311-7-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zhang, Fei verfasserin aut Delayed breakdown diode and its optimal design for solid state picosecond closing switch 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 Li, Chengfang verfasserin aut Shi, Lina verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 36(2004), 15 vom: Dez., Seite 1253-1261 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:36 year:2004 number:15 month:12 pages:1253-1261 https://dx.doi.org/10.1007/s11082-004-8311-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 36 2004 15 12 1253-1261 |
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10.1007/s11082-004-8311-7 doi (DE-627)SPR016452798 (SPR)s11082-004-8311-7-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zhang, Fei verfasserin aut Delayed breakdown diode and its optimal design for solid state picosecond closing switch 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 Li, Chengfang verfasserin aut Shi, Lina verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 36(2004), 15 vom: Dez., Seite 1253-1261 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:36 year:2004 number:15 month:12 pages:1253-1261 https://dx.doi.org/10.1007/s11082-004-8311-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 36 2004 15 12 1253-1261 |
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10.1007/s11082-004-8311-7 doi (DE-627)SPR016452798 (SPR)s11082-004-8311-7-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zhang, Fei verfasserin aut Delayed breakdown diode and its optimal design for solid state picosecond closing switch 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 Li, Chengfang verfasserin aut Shi, Lina verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 36(2004), 15 vom: Dez., Seite 1253-1261 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:36 year:2004 number:15 month:12 pages:1253-1261 https://dx.doi.org/10.1007/s11082-004-8311-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 36 2004 15 12 1253-1261 |
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10.1007/s11082-004-8311-7 doi (DE-627)SPR016452798 (SPR)s11082-004-8311-7-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Zhang, Fei verfasserin aut Delayed breakdown diode and its optimal design for solid state picosecond closing switch 2004 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 Li, Chengfang verfasserin aut Shi, Lina verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 36(2004), 15 vom: Dez., Seite 1253-1261 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:36 year:2004 number:15 month:12 pages:1253-1261 https://dx.doi.org/10.1007/s11082-004-8311-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 36 2004 15 12 1253-1261 |
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English |
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Enthalten in Optical and quantum electronics 36(2004), 15 vom: Dez., Seite 1253-1261 volume:36 year:2004 number:15 month:12 pages:1253-1261 |
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Enthalten in Optical and quantum electronics 36(2004), 15 vom: Dez., Seite 1253-1261 volume:36 year:2004 number:15 month:12 pages:1253-1261 |
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delayed breakdown diode picosecond switch semiconductor closing switch |
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Optical and quantum electronics |
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Zhang, Fei @@aut@@ Li, Chengfang @@aut@@ Shi, Lina @@aut@@ |
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2004-12-01T00:00:00Z |
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Zhang, Fei |
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Zhang, Fei ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc delayed breakdown diode misc picosecond switch misc semiconductor closing switch Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Delayed breakdown diode and its optimal design for solid state picosecond closing switch delayed breakdown diode (dpeaa)DE-He213 picosecond switch (dpeaa)DE-He213 semiconductor closing switch (dpeaa)DE-He213 |
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ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc delayed breakdown diode misc picosecond switch misc semiconductor closing switch |
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ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc delayed breakdown diode misc picosecond switch misc semiconductor closing switch |
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ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc delayed breakdown diode misc picosecond switch misc semiconductor closing switch |
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Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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Zhang, Fei |
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Zhang, Fei Li, Chengfang Shi, Lina |
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delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
| abstract |
Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. |
| abstractGer |
Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. |
| abstract_unstemmed |
Abstract We study a Si-based diode with a $ p^{+} %$ nn^{+} $ structure for picosecond semiconductor closing switch and discuss the physical process, which underlies the operation principle of high-power closing switch based on a delayed breakdown diode (DBD). From the results of numerical simulations and theoretical analysis, single device has demonstrated reliable operation at 2.3 kV, 89 ps risetime, and high output dV/dt(30 kV/ns). As a contribution to the optimal design, some conclusions about trade-off are drawn by changing structure parameters and physical parameters. |
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Delayed breakdown diode and its optimal design for solid state picosecond closing switch |
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https://dx.doi.org/10.1007/s11082-004-8311-7 |
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Li, Chengfang Shi, Lina |
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Li, Chengfang Shi, Lina |
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| doi_str |
10.1007/s11082-004-8311-7 |
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2024-07-03T23:08:54.739Z |
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| score |
7.4028835 |