Phototransistor noise model based on noise measurements on PNP PIN phototransistors
Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furth...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Gaberl, Wolfgang [verfasserIn] Kostov, Plamen [verfasserIn] Hofbauer, Michael [verfasserIn] Zimmermann, Horst [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Optical and quantum electronics - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969, 46(2014), 10 vom: 14. Jan., Seite 1269-1275 |
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| Übergeordnetes Werk: |
volume:46 ; year:2014 ; number:10 ; day:14 ; month:01 ; pages:1269-1275 |
| Links: |
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| DOI / URN: |
10.1007/s11082-013-9839-1 |
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| Katalog-ID: |
SPR016460758 |
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| 100 | 1 | |a Gaberl, Wolfgang |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Phototransistor noise model based on noise measurements on PNP PIN phototransistors |
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| 520 | |a Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. | ||
| 650 | 4 | |a Phototransistor |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Noise model |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a CMOS |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Bipolar |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Base resistor |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Noise |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Kostov, Plamen |e verfasserin |4 aut | |
| 700 | 1 | |a Hofbauer, Michael |e verfasserin |4 aut | |
| 700 | 1 | |a Zimmermann, Horst |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Optical and quantum electronics |d Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 |g 46(2014), 10 vom: 14. Jan., Seite 1269-1275 |w (DE-627)312693869 |w (DE-600)2000642-1 |x 1572-817X |7 nnns |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s11082-013-9839-1 |z lizenzpflichtig |3 Volltext |
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| 912 | |a GBV_ILN_2113 | ||
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| 912 | |a GBV_ILN_2147 | ||
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10.1007/s11082-013-9839-1 doi (DE-627)SPR016460758 (SPR)s11082-013-9839-1-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Gaberl, Wolfgang verfasserin aut Phototransistor noise model based on noise measurements on PNP PIN phototransistors 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 Kostov, Plamen verfasserin aut Hofbauer, Michael verfasserin aut Zimmermann, Horst verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 46(2014), 10 vom: 14. Jan., Seite 1269-1275 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 https://dx.doi.org/10.1007/s11082-013-9839-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 46 2014 10 14 01 1269-1275 |
| spelling |
10.1007/s11082-013-9839-1 doi (DE-627)SPR016460758 (SPR)s11082-013-9839-1-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Gaberl, Wolfgang verfasserin aut Phototransistor noise model based on noise measurements on PNP PIN phototransistors 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 Kostov, Plamen verfasserin aut Hofbauer, Michael verfasserin aut Zimmermann, Horst verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 46(2014), 10 vom: 14. Jan., Seite 1269-1275 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 https://dx.doi.org/10.1007/s11082-013-9839-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 46 2014 10 14 01 1269-1275 |
| allfields_unstemmed |
10.1007/s11082-013-9839-1 doi (DE-627)SPR016460758 (SPR)s11082-013-9839-1-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Gaberl, Wolfgang verfasserin aut Phototransistor noise model based on noise measurements on PNP PIN phototransistors 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 Kostov, Plamen verfasserin aut Hofbauer, Michael verfasserin aut Zimmermann, Horst verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 46(2014), 10 vom: 14. Jan., Seite 1269-1275 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 https://dx.doi.org/10.1007/s11082-013-9839-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 46 2014 10 14 01 1269-1275 |
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10.1007/s11082-013-9839-1 doi (DE-627)SPR016460758 (SPR)s11082-013-9839-1-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Gaberl, Wolfgang verfasserin aut Phototransistor noise model based on noise measurements on PNP PIN phototransistors 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 Kostov, Plamen verfasserin aut Hofbauer, Michael verfasserin aut Zimmermann, Horst verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 46(2014), 10 vom: 14. Jan., Seite 1269-1275 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 https://dx.doi.org/10.1007/s11082-013-9839-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 46 2014 10 14 01 1269-1275 |
| allfieldsSound |
10.1007/s11082-013-9839-1 doi (DE-627)SPR016460758 (SPR)s11082-013-9839-1-e DE-627 ger DE-627 rakwb eng 500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Gaberl, Wolfgang verfasserin aut Phototransistor noise model based on noise measurements on PNP PIN phototransistors 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 Kostov, Plamen verfasserin aut Hofbauer, Michael verfasserin aut Zimmermann, Horst verfasserin aut Enthalten in Optical and quantum electronics Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 46(2014), 10 vom: 14. Jan., Seite 1269-1275 (DE-627)312693869 (DE-600)2000642-1 1572-817X nnns volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 https://dx.doi.org/10.1007/s11082-013-9839-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.38 ASE 33.18 ASE 33.23 ASE 53.54 ASE 52.88 ASE 33.72 ASE AR 46 2014 10 14 01 1269-1275 |
| language |
English |
| source |
Enthalten in Optical and quantum electronics 46(2014), 10 vom: 14. Jan., Seite 1269-1275 volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 |
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Enthalten in Optical and quantum electronics 46(2014), 10 vom: 14. Jan., Seite 1269-1275 volume:46 year:2014 number:10 day:14 month:01 pages:1269-1275 |
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findex.gbv.de |
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Phototransistor Noise model CMOS Bipolar Base resistor Noise |
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Optical and quantum electronics |
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Gaberl, Wolfgang @@aut@@ Kostov, Plamen @@aut@@ Hofbauer, Michael @@aut@@ Zimmermann, Horst @@aut@@ |
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2014-01-14T00:00:00Z |
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The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. 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Gaberl, Wolfgang |
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Gaberl, Wolfgang ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc Phototransistor misc Noise model misc CMOS misc Bipolar misc Base resistor misc Noise Phototransistor noise model based on noise measurements on PNP PIN phototransistors |
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500 620 ASE 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 bkl Phototransistor noise model based on noise measurements on PNP PIN phototransistors Phototransistor (dpeaa)DE-He213 Noise model (dpeaa)DE-He213 CMOS (dpeaa)DE-He213 Bipolar (dpeaa)DE-He213 Base resistor (dpeaa)DE-He213 Noise (dpeaa)DE-He213 |
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ddc 500 bkl 33.38 bkl 33.18 bkl 33.23 bkl 53.54 bkl 52.88 bkl 33.72 misc Phototransistor misc Noise model misc CMOS misc Bipolar misc Base resistor misc Noise |
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Gaberl, Wolfgang Kostov, Plamen Hofbauer, Michael Zimmermann, Horst |
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Gaberl, Wolfgang |
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phototransistor noise model based on noise measurements on pnp pin phototransistors |
| title_auth |
Phototransistor noise model based on noise measurements on PNP PIN phototransistors |
| abstract |
Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. |
| abstractGer |
Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. |
| abstract_unstemmed |
Abstract A noise model for phototransistors in open base configuration is presented. The model was developed from the noise measurements on four different phototransistor designs. The extracted current gains from the noise model were verified by measured current gains from Gummel measurements. Furthermore the current noise spectral density was modeled and compared with the noise measurements. A difference of less than 12 % in the current gain was achieved. In addition to the extracted current gains also the most dominant shot noise terms including their values of each phototransistor are extracted. |
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Phototransistor noise model based on noise measurements on PNP PIN phototransistors |
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| score |
7.4027834 |