Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry
Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer und...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Rahman, Md. Khalilur [verfasserIn] Licitra, Christophe [verfasserIn] Nemouchi, Fabrice [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2019 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Oxidation of metals - Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969, 91(2019), 3-4 vom: 11. Feb., Seite 349-363 |
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| Übergeordnetes Werk: |
volume:91 ; year:2019 ; number:3-4 ; day:11 ; month:02 ; pages:349-363 |
| Links: |
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| DOI / URN: |
10.1007/s11085-019-09885-2 |
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| Katalog-ID: |
SPR016511786 |
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| 520 | |a Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. | ||
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| 650 | 4 | |a In situ X-ray reflectivity |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a In situ ellipsometry |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Licitra, Christophe |e verfasserin |4 aut | |
| 700 | 1 | |a Nemouchi, Fabrice |e verfasserin |4 aut | |
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10.1007/s11085-019-09885-2 doi (DE-627)SPR016511786 (SPR)s11085-019-09885-2-e DE-627 ger DE-627 rakwb eng 540 ASE 35.13 bkl 51.50 bkl Rahman, Md. Khalilur verfasserin aut Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 Licitra, Christophe verfasserin aut Nemouchi, Fabrice verfasserin aut Enthalten in Oxidation of metals Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 91(2019), 3-4 vom: 11. Feb., Seite 349-363 (DE-627)318545055 (DE-600)2018581-9 1573-4889 nnns volume:91 year:2019 number:3-4 day:11 month:02 pages:349-363 https://dx.doi.org/10.1007/s11085-019-09885-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.13 ASE 51.50 ASE AR 91 2019 3-4 11 02 349-363 |
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10.1007/s11085-019-09885-2 doi (DE-627)SPR016511786 (SPR)s11085-019-09885-2-e DE-627 ger DE-627 rakwb eng 540 ASE 35.13 bkl 51.50 bkl Rahman, Md. Khalilur verfasserin aut Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 Licitra, Christophe verfasserin aut Nemouchi, Fabrice verfasserin aut Enthalten in Oxidation of metals Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 91(2019), 3-4 vom: 11. Feb., Seite 349-363 (DE-627)318545055 (DE-600)2018581-9 1573-4889 nnns volume:91 year:2019 number:3-4 day:11 month:02 pages:349-363 https://dx.doi.org/10.1007/s11085-019-09885-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.13 ASE 51.50 ASE AR 91 2019 3-4 11 02 349-363 |
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10.1007/s11085-019-09885-2 doi (DE-627)SPR016511786 (SPR)s11085-019-09885-2-e DE-627 ger DE-627 rakwb eng 540 ASE 35.13 bkl 51.50 bkl Rahman, Md. Khalilur verfasserin aut Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 Licitra, Christophe verfasserin aut Nemouchi, Fabrice verfasserin aut Enthalten in Oxidation of metals Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 91(2019), 3-4 vom: 11. Feb., Seite 349-363 (DE-627)318545055 (DE-600)2018581-9 1573-4889 nnns volume:91 year:2019 number:3-4 day:11 month:02 pages:349-363 https://dx.doi.org/10.1007/s11085-019-09885-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.13 ASE 51.50 ASE AR 91 2019 3-4 11 02 349-363 |
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10.1007/s11085-019-09885-2 doi (DE-627)SPR016511786 (SPR)s11085-019-09885-2-e DE-627 ger DE-627 rakwb eng 540 ASE 35.13 bkl 51.50 bkl Rahman, Md. Khalilur verfasserin aut Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 Licitra, Christophe verfasserin aut Nemouchi, Fabrice verfasserin aut Enthalten in Oxidation of metals Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 91(2019), 3-4 vom: 11. Feb., Seite 349-363 (DE-627)318545055 (DE-600)2018581-9 1573-4889 nnns volume:91 year:2019 number:3-4 day:11 month:02 pages:349-363 https://dx.doi.org/10.1007/s11085-019-09885-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.13 ASE 51.50 ASE AR 91 2019 3-4 11 02 349-363 |
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10.1007/s11085-019-09885-2 doi (DE-627)SPR016511786 (SPR)s11085-019-09885-2-e DE-627 ger DE-627 rakwb eng 540 ASE 35.13 bkl 51.50 bkl Rahman, Md. Khalilur verfasserin aut Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 Licitra, Christophe verfasserin aut Nemouchi, Fabrice verfasserin aut Enthalten in Oxidation of metals Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969 91(2019), 3-4 vom: 11. Feb., Seite 349-363 (DE-627)318545055 (DE-600)2018581-9 1573-4889 nnns volume:91 year:2019 number:3-4 day:11 month:02 pages:349-363 https://dx.doi.org/10.1007/s11085-019-09885-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 35.13 ASE 51.50 ASE AR 91 2019 3-4 11 02 349-363 |
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Khalilur</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2019</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Silicidation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Oxidation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">In situ morphology</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">In situ X-ray reflectivity</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">In situ ellipsometry</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Licitra, Christophe</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Nemouchi, Fabrice</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Oxidation of metals</subfield><subfield code="d">Dordrecht [u.a.] : Springer Science + Business Media B.V, 1969</subfield><subfield code="g">91(2019), 3-4 vom: 11. 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Rahman, Md. Khalilur |
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Rahman, Md. Khalilur ddc 540 bkl 35.13 bkl 51.50 misc Silicidation misc Oxidation misc In situ morphology misc In situ X-ray reflectivity misc In situ ellipsometry Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry |
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540 ASE 35.13 bkl 51.50 bkl Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry Silicidation (dpeaa)DE-He213 Oxidation (dpeaa)DE-He213 In situ morphology (dpeaa)DE-He213 In situ X-ray reflectivity (dpeaa)DE-He213 In situ ellipsometry (dpeaa)DE-He213 |
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ddc 540 bkl 35.13 bkl 51.50 misc Silicidation misc Oxidation misc In situ morphology misc In situ X-ray reflectivity misc In situ ellipsometry |
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ddc 540 bkl 35.13 bkl 51.50 misc Silicidation misc Oxidation misc In situ morphology misc In situ X-ray reflectivity misc In situ ellipsometry |
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ddc 540 bkl 35.13 bkl 51.50 misc Silicidation misc Oxidation misc In situ morphology misc In situ X-ray reflectivity misc In situ ellipsometry |
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Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry |
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Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry |
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Rahman, Md. Khalilur |
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Oxidation of metals |
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Rahman, Md. Khalilur Licitra, Christophe Nemouchi, Fabrice |
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study of $ sio_{2} $ on ni and ti silicide after different oxidation techniques investigated by xrr, sem and ellipsometry |
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Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry |
| abstract |
Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. |
| abstractGer |
Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. |
| abstract_unstemmed |
Abstract Although silicide oxidation was studied 20 years ago, the interest in obtaining a robust process for new applications remains significant today. Indeed, the new architectural development process requires dense and narrow spaces. In this study, attempts were made to bury a silicide layer under a protective silica layer in order to keep the physical and electrical properties of the silicide constant after oxidation. Thus, we first tried to reproduce and study these conditions and, once acquired, aimed to decrease the oxidation temperature in order to meet industrial requirements. Titanium (Ti) and nickel (Ni) were chosen for their metallurgical interest and their integration capability in devices. Four different groups of silicide (TiSi, $ TiSi_{2} $, $ Ni_{2} $Si, NiSi) were targeted by adjusting the temperature. Then, all of the silicides, including one pure Si wafer, were oxidized using dry, wet and plasma techniques. In situ scanning electron microscopy, spectroscopic ellipsometry and X-ray reflectivity measurements were carried out simultaneously before and after oxidation of the silicide to characterize the $ SiO_{2} $ and silicide morphology, thickness and density. We found that after 800 °C dry oxidation, Ti silicide was totally oxidized, which was an unexpected result. But, Ni silicide showed an agglomeration phenomenon after 500 °C and 800 °C dry oxidation. Although, after wet oxidation, it was confirmed that the highest $ SiO_{2} $ thickness formed, the NiSi surface roughness was higher. In the case of plasma oxidation, we obtained a thin layer (≈ 1 nm) of $ SiO_{2} $ on NiSi with an extremely smooth surface. |
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| container_issue |
3-4 |
| title_short |
Study of $ SiO_{2} $ on Ni and Ti Silicide After Different Oxidation Techniques Investigated by XRR, SEM and Ellipsometry |
| url |
https://dx.doi.org/10.1007/s11085-019-09885-2 |
| remote_bool |
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| author2 |
Licitra, Christophe Nemouchi, Fabrice |
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Licitra, Christophe Nemouchi, Fabrice |
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| doi_str |
10.1007/s11085-019-09885-2 |
| up_date |
2024-07-03T23:29:01.379Z |
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| score |
7.3998117 |