Investigation into the selectivity of etching various materials by fast neutral particle beams
Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-1...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Maishev, Yu. P. [verfasserIn] Shevchuk, S. L. [verfasserIn] Kudrya, V. P. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Russian microelectronics - Moscow : MAIK Nauka/Interperiodica Publ., 2000, 43(2014), 6 vom: Nov., Seite 388-391 |
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| Übergeordnetes Werk: |
volume:43 ; year:2014 ; number:6 ; month:11 ; pages:388-391 |
| Links: |
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| DOI / URN: |
10.1134/S1063739714060067 |
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| Katalog-ID: |
SPR017530318 |
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| 100 | 1 | |a Maishev, Yu. P. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Investigation into the selectivity of etching various materials by fast neutral particle beams |
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| 520 | |a Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. | ||
| 650 | 4 | |a RUSSIAN Microelectronics |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Etching Selectivity |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Neutral Beam |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Discharge Voltage Versus |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Fast Neutral Particle |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Shevchuk, S. L. |e verfasserin |4 aut | |
| 700 | 1 | |a Kudrya, V. P. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Russian microelectronics |d Moscow : MAIK Nauka/Interperiodica Publ., 2000 |g 43(2014), 6 vom: Nov., Seite 388-391 |w (DE-627)334714338 |w (DE-600)2058225-0 |x 1608-3415 |7 nnns |
| 773 | 1 | 8 | |g volume:43 |g year:2014 |g number:6 |g month:11 |g pages:388-391 |
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10.1134/S1063739714060067 doi (DE-627)SPR017530318 (SPR)S1063739714060067-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Maishev, Yu. P. verfasserin aut Investigation into the selectivity of etching various materials by fast neutral particle beams 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 Shevchuk, S. L. verfasserin aut Kudrya, V. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 43(2014), 6 vom: Nov., Seite 388-391 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:43 year:2014 number:6 month:11 pages:388-391 https://dx.doi.org/10.1134/S1063739714060067 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 43 2014 6 11 388-391 |
| spelling |
10.1134/S1063739714060067 doi (DE-627)SPR017530318 (SPR)S1063739714060067-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Maishev, Yu. P. verfasserin aut Investigation into the selectivity of etching various materials by fast neutral particle beams 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 Shevchuk, S. L. verfasserin aut Kudrya, V. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 43(2014), 6 vom: Nov., Seite 388-391 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:43 year:2014 number:6 month:11 pages:388-391 https://dx.doi.org/10.1134/S1063739714060067 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 43 2014 6 11 388-391 |
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10.1134/S1063739714060067 doi (DE-627)SPR017530318 (SPR)S1063739714060067-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Maishev, Yu. P. verfasserin aut Investigation into the selectivity of etching various materials by fast neutral particle beams 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 Shevchuk, S. L. verfasserin aut Kudrya, V. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 43(2014), 6 vom: Nov., Seite 388-391 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:43 year:2014 number:6 month:11 pages:388-391 https://dx.doi.org/10.1134/S1063739714060067 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 43 2014 6 11 388-391 |
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10.1134/S1063739714060067 doi (DE-627)SPR017530318 (SPR)S1063739714060067-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Maishev, Yu. P. verfasserin aut Investigation into the selectivity of etching various materials by fast neutral particle beams 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 Shevchuk, S. L. verfasserin aut Kudrya, V. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 43(2014), 6 vom: Nov., Seite 388-391 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:43 year:2014 number:6 month:11 pages:388-391 https://dx.doi.org/10.1134/S1063739714060067 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 43 2014 6 11 388-391 |
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10.1134/S1063739714060067 doi (DE-627)SPR017530318 (SPR)S1063739714060067-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Maishev, Yu. P. verfasserin aut Investigation into the selectivity of etching various materials by fast neutral particle beams 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 Shevchuk, S. L. verfasserin aut Kudrya, V. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 43(2014), 6 vom: Nov., Seite 388-391 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:43 year:2014 number:6 month:11 pages:388-391 https://dx.doi.org/10.1134/S1063739714060067 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 43 2014 6 11 388-391 |
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RUSSIAN Microelectronics Etching Selectivity Neutral Beam Discharge Voltage Versus Fast Neutral Particle |
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Maishev, Yu. P. @@aut@@ Shevchuk, S. L. @@aut@@ Kudrya, V. P. @@aut@@ |
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Maishev, Yu. P. ddc 620 bkl 53.00 misc RUSSIAN Microelectronics misc Etching Selectivity misc Neutral Beam misc Discharge Voltage Versus misc Fast Neutral Particle Investigation into the selectivity of etching various materials by fast neutral particle beams |
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620 ASE 53.00 bkl Investigation into the selectivity of etching various materials by fast neutral particle beams RUSSIAN Microelectronics (dpeaa)DE-He213 Etching Selectivity (dpeaa)DE-He213 Neutral Beam (dpeaa)DE-He213 Discharge Voltage Versus (dpeaa)DE-He213 Fast Neutral Particle (dpeaa)DE-He213 |
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investigation into the selectivity of etching various materials by fast neutral particle beams |
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Investigation into the selectivity of etching various materials by fast neutral particle beams |
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Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. |
| abstractGer |
Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. |
| abstract_unstemmed |
Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. The possibility of attaining etching selectivity by FNP beams of the mentioned materials relative to $ SiO_{2} $ in a range of 10–16 is shown. The data are compared with the currently published results of investigations into this region. |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR017530318</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111052546.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2014 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S1063739714060067</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR017530318</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)S1063739714060067-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Maishev, Yu. P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Investigation into the selectivity of etching various materials by fast neutral particle beams</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2014</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The results of an investigation into the etching rate and selectivity of silicon substrates, as well as $ SiO_{2} $, W, TiN, TiC, and NbN films, with the use of chemically active compounds $ CF_{4} $, $ C_{3} %$ F_{6} $, and $ SF_{6} $ as working gases, which were obtained using a Neutral-110L source of extended fast neutral particle (FNP) beams developed at the Institute of Physics and Technology of the Russian Academy of Sciences (FTIAN), are presented. 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