Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics

Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, sim...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Kudrya, V. P. [verfasserIn] Maishev, Yu. P. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2018

Übergeordnetes Werk:	Enthalten in: Russian microelectronics - Moscow : MAIK Nauka/Interperiodica Publ., 2000, 47(2018), 5 vom: Sept., Seite 332-343
Übergeordnetes Werk:	volume:47 ; year:2018 ; number:5 ; month:09 ; pages:332-343

Links:	Volltext

DOI / URN:	10.1134/S1063739718050049

Katalog-ID:	SPR017533643

Internformat


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520			\|a Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.
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912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
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allfields	10.1134/S1063739718050049 doi (DE-627)SPR017533643 (SPR)S1063739718050049-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Kudrya, V. P. verfasserin aut Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed. Maishev, Yu. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 47(2018), 5 vom: Sept., Seite 332-343 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:47 year:2018 number:5 month:09 pages:332-343 https://dx.doi.org/10.1134/S1063739718050049 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 47 2018 5 09 332-343
spelling	10.1134/S1063739718050049 doi (DE-627)SPR017533643 (SPR)S1063739718050049-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Kudrya, V. P. verfasserin aut Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed. Maishev, Yu. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 47(2018), 5 vom: Sept., Seite 332-343 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:47 year:2018 number:5 month:09 pages:332-343 https://dx.doi.org/10.1134/S1063739718050049 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 47 2018 5 09 332-343
allfields_unstemmed	10.1134/S1063739718050049 doi (DE-627)SPR017533643 (SPR)S1063739718050049-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Kudrya, V. P. verfasserin aut Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed. Maishev, Yu. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 47(2018), 5 vom: Sept., Seite 332-343 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:47 year:2018 number:5 month:09 pages:332-343 https://dx.doi.org/10.1134/S1063739718050049 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 47 2018 5 09 332-343
allfieldsGer	10.1134/S1063739718050049 doi (DE-627)SPR017533643 (SPR)S1063739718050049-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Kudrya, V. P. verfasserin aut Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed. Maishev, Yu. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 47(2018), 5 vom: Sept., Seite 332-343 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:47 year:2018 number:5 month:09 pages:332-343 https://dx.doi.org/10.1134/S1063739718050049 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 47 2018 5 09 332-343
allfieldsSound	10.1134/S1063739718050049 doi (DE-627)SPR017533643 (SPR)S1063739718050049-e DE-627 ger DE-627 rakwb eng 620 ASE 53.00 bkl Kudrya, V. P. verfasserin aut Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed. Maishev, Yu. P. verfasserin aut Enthalten in Russian microelectronics Moscow : MAIK Nauka/Interperiodica Publ., 2000 47(2018), 5 vom: Sept., Seite 332-343 (DE-627)334714338 (DE-600)2058225-0 1608-3415 nnns volume:47 year:2018 number:5 month:09 pages:332-343 https://dx.doi.org/10.1134/S1063739718050049 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE AR 47 2018 5 09 332-343
language	English
source	Enthalten in Russian microelectronics 47(2018), 5 vom: Sept., Seite 332-343 volume:47 year:2018 number:5 month:09 pages:332-343
sourceStr	Enthalten in Russian microelectronics 47(2018), 5 vom: Sept., Seite 332-343 volume:47 year:2018 number:5 month:09 pages:332-343
format_phy_str_mv	Article
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container_title	Russian microelectronics
authorswithroles_txt_mv	Kudrya, V. P. @@aut@@ Maishev, Yu. P. @@aut@@
publishDateDaySort_date	2018-09-01T00:00:00Z
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author	Kudrya, V. P.
spellingShingle	Kudrya, V. P. ddc 620 bkl 53.00 Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
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topic_title	620 ASE 53.00 bkl Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
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title	Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
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title_full	Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
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title_sort	applications of the technology of fast neutral particle beams in micro- and nanoelectronics
title_auth	Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
abstract	Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.
abstractGer	Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.
abstract_unstemmed	Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.
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title_short	Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics
url	https://dx.doi.org/10.1134/S1063739718050049
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doi_str	10.1134/S1063739718050049
up_date	2024-07-03T13:31:42.287Z
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P.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Applications of the Technology of Fast Neutral Particle Beams in Micro- and Nanoelectronics</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2018</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract A brief review of the results of the application of fast neutral particle (FNP) beam sources in the field of the production technology of micro- and nanoelectronic devices published in the literature is presented. Processes such as surface cleaning; sputtering and etching of insulators, simiconductors, and metals; layer-by-layer etching; deposition of thin films directly from beams or by sputtering, and neutral-beam-enhanced deposition; oxidation, nitridation, and fluorination of a near-surface layer; production of the elements of micro- and nanoelectromechanical devices; nanostructuring; and modification of self-assembled organic molecular structures are considered. In addition, the results of investigating a decrease in the degree of degradation of the electrophysical properties of materials and electrical characteristics of device structures when passing from ion-beam technologies to FNP beams are discussed.</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Maishev, Yu. 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