Effect of silver growth temperature on the contacts between Ag and ZnO thin films

Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal qua...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Li, XinKun [verfasserIn] Li, QingShan [verfasserIn] Liang, DeChun [verfasserIn] Xu, YanDong [verfasserIn] Xie, XiaoJun [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2009

Schlagwörter:	ZnO Schottky barrier interface MSM structure

Übergeordnetes Werk:	Enthalten in: Science in China - Heidelberg : Springer, 1997, 52(2009), 9 vom: 05. Aug., Seite 2779-2784
Übergeordnetes Werk:	volume:52 ; year:2009 ; number:9 ; day:05 ; month:08 ; pages:2779-2784

Links:	Volltext

DOI / URN:	10.1007/s11431-009-0155-8

Katalog-ID:	SPR019262086

Internformat


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520			\|a Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.
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matchkey_str	article:1862281X:2009----::fetfivrrwheprtroteotcsewe
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allfields	10.1007/s11431-009-0155-8 doi (DE-627)SPR019262086 (SPR)s11431-009-0155-8-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Li, XinKun verfasserin aut Effect of silver growth temperature on the contacts between Ag and ZnO thin films 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers. ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213 Li, QingShan verfasserin aut Liang, DeChun verfasserin aut Xu, YanDong verfasserin aut Xie, XiaoJun verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 52(2009), 9 vom: 05. Aug., Seite 2779-2784 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784 https://dx.doi.org/10.1007/s11431-009-0155-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.00 ASE AR 52 2009 9 05 08 2779-2784
spelling	10.1007/s11431-009-0155-8 doi (DE-627)SPR019262086 (SPR)s11431-009-0155-8-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Li, XinKun verfasserin aut Effect of silver growth temperature on the contacts between Ag and ZnO thin films 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers. ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213 Li, QingShan verfasserin aut Liang, DeChun verfasserin aut Xu, YanDong verfasserin aut Xie, XiaoJun verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 52(2009), 9 vom: 05. Aug., Seite 2779-2784 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784 https://dx.doi.org/10.1007/s11431-009-0155-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.00 ASE AR 52 2009 9 05 08 2779-2784
allfields_unstemmed	10.1007/s11431-009-0155-8 doi (DE-627)SPR019262086 (SPR)s11431-009-0155-8-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Li, XinKun verfasserin aut Effect of silver growth temperature on the contacts between Ag and ZnO thin films 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers. ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213 Li, QingShan verfasserin aut Liang, DeChun verfasserin aut Xu, YanDong verfasserin aut Xie, XiaoJun verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 52(2009), 9 vom: 05. Aug., Seite 2779-2784 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784 https://dx.doi.org/10.1007/s11431-009-0155-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.00 ASE AR 52 2009 9 05 08 2779-2784
allfieldsGer	10.1007/s11431-009-0155-8 doi (DE-627)SPR019262086 (SPR)s11431-009-0155-8-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Li, XinKun verfasserin aut Effect of silver growth temperature on the contacts between Ag and ZnO thin films 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers. ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213 Li, QingShan verfasserin aut Liang, DeChun verfasserin aut Xu, YanDong verfasserin aut Xie, XiaoJun verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 52(2009), 9 vom: 05. Aug., Seite 2779-2784 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784 https://dx.doi.org/10.1007/s11431-009-0155-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.00 ASE AR 52 2009 9 05 08 2779-2784
allfieldsSound	10.1007/s11431-009-0155-8 doi (DE-627)SPR019262086 (SPR)s11431-009-0155-8-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Li, XinKun verfasserin aut Effect of silver growth temperature on the contacts between Ag and ZnO thin films 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers. ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213 Li, QingShan verfasserin aut Liang, DeChun verfasserin aut Xu, YanDong verfasserin aut Xie, XiaoJun verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 52(2009), 9 vom: 05. Aug., Seite 2779-2784 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784 https://dx.doi.org/10.1007/s11431-009-0155-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 50.00 ASE AR 52 2009 9 05 08 2779-2784
language	English
source	Enthalten in Science in China 52(2009), 9 vom: 05. Aug., Seite 2779-2784 volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784
sourceStr	Enthalten in Science in China 52(2009), 9 vom: 05. Aug., Seite 2779-2784 volume:52 year:2009 number:9 day:05 month:08 pages:2779-2784
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	ZnO Schottky barrier interface MSM structure
dewey-raw	600
isfreeaccess_bool	false
container_title	Science in China
authorswithroles_txt_mv	Li, XinKun @@aut@@ Li, QingShan @@aut@@ Liang, DeChun @@aut@@ Xu, YanDong @@aut@@ Xie, XiaoJun @@aut@@
publishDateDaySort_date	2009-08-05T00:00:00Z
hierarchy_top_id	385614756
dewey-sort	3600
id	SPR019262086
language_de	englisch
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author	Li, XinKun
spellingShingle	Li, XinKun ddc 600 bkl 50.00 misc ZnO misc Schottky barrier misc interface misc MSM structure Effect of silver growth temperature on the contacts between Ag and ZnO thin films
authorStr	Li, XinKun
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topic_title	600 ASE 50.00 bkl Effect of silver growth temperature on the contacts between Ag and ZnO thin films ZnO (dpeaa)DE-He213 Schottky barrier (dpeaa)DE-He213 interface (dpeaa)DE-He213 MSM structure (dpeaa)DE-He213
topic	ddc 600 bkl 50.00 misc ZnO misc Schottky barrier misc interface misc MSM structure
topic_unstemmed	ddc 600 bkl 50.00 misc ZnO misc Schottky barrier misc interface misc MSM structure
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format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Effect of silver growth temperature on the contacts between Ag and ZnO thin films
ctrlnum	(DE-627)SPR019262086 (SPR)s11431-009-0155-8-e
title_full	Effect of silver growth temperature on the contacts between Ag and ZnO thin films
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author_browse	Li, XinKun Li, QingShan Liang, DeChun Xu, YanDong Xie, XiaoJun
container_volume	52
class	600 ASE 50.00 bkl
format_se	Elektronische Aufsätze
author-letter	Li, XinKun
doi_str_mv	10.1007/s11431-009-0155-8
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title_sort	effect of silver growth temperature on the contacts between ag and zno thin films
title_auth	Effect of silver growth temperature on the contacts between Ag and ZnO thin films
abstract	Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.
abstractGer	Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.
abstract_unstemmed	Abstract Highly c-axis oriented ZnO thin films were deposited on Si substrates by the pulsed laser deposition (PLD) method. At different growth temperatures, 200 nm silver films as the contact metal were deposited on the ZnO thin films. The growth temperatures have great influence on the crystal quality of Ag films. Current-voltage characteristics were measured at room temperature. The Schottky contacts between Ag and ZnO thin films were successfully obtained when silver electrodes were deposited at 150°C and 200°C. Ohmic contacts were formed while the growth temperatures were lower than 150°C or higher than 200°C. After analysis, the forming of Ag/ZnO Schottky contacts was shown to be dependent on the appearance of the p-type inversion layer at the interface between Ag and ZnO layers.
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container_issue	9
title_short	Effect of silver growth temperature on the contacts between Ag and ZnO thin films
url	https://dx.doi.org/10.1007/s11431-009-0155-8
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author2	Li, QingShan Liang, DeChun Xu, YanDong Xie, XiaoJun
author2Str	Li, QingShan Liang, DeChun Xu, YanDong Xie, XiaoJun
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doi_str	10.1007/s11431-009-0155-8
up_date	2024-07-04T00:52:31.749Z
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Effect of silver growth temperature on the contacts between Ag and ZnO thin films

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