Large area mold fabrication for the nanoimprint lithography using electron beam lithography

Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-bea...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Chu, JinKui [verfasserIn] Meng, FanTao [verfasserIn] Han, ZhiTao [verfasserIn] Guo, Qing [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	nanoimprint lithography mold fabrication electron beam lithography

Übergeordnetes Werk:	Enthalten in: Science in China - Heidelberg : Springer, 1997, 53(2010), 1 vom: Jan., Seite 248-252
Übergeordnetes Werk:	volume:53 ; year:2010 ; number:1 ; month:01 ; pages:248-252

Links:	Volltext

DOI / URN:	10.1007/s11431-009-0320-0

Katalog-ID:	SPR019262647

Internformat


LEADER	01000caa a22002652 4500
001	SPR019262647
003	DE-627
005	20220111065346.0
007	cr uuu---uuuuu
008	201006s2010 xx \|\|\|\|\|o 00\| \|\|eng c
024	7		\|a 10.1007/s11431-009-0320-0 \|2 doi
035			\|a (DE-627)SPR019262647
035			\|a (SPR)s11431-009-0320-0-e
040			\|a DE-627 \|b ger \|c DE-627 \|e rakwb
041			\|a eng
082	0	4	\|a 600 \|q ASE
082	0	4	\|a 600 \|q ASE
084			\|a 50.00 \|2 bkl
100	1		\|a Chu, JinKui \|e verfasserin \|4 aut
245	1	0	\|a Large area mold fabrication for the nanoimprint lithography using electron beam lithography
264		1	\|c 2010
336			\|a Text \|b txt \|2 rdacontent
337			\|a Computermedien \|b c \|2 rdamedia
338			\|a Online-Ressource \|b cr \|2 rdacarrier
520			\|a Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.
650		4	\|a nanoimprint lithography \|7 (dpeaa)DE-He213
650		4	\|a mold fabrication \|7 (dpeaa)DE-He213
650		4	\|a electron beam lithography \|7 (dpeaa)DE-He213
700	1		\|a Meng, FanTao \|e verfasserin \|4 aut
700	1		\|a Han, ZhiTao \|e verfasserin \|4 aut
700	1		\|a Guo, Qing \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Science in China \|d Heidelberg : Springer, 1997 \|g 53(2010), 1 vom: Jan., Seite 248-252 \|w (DE-627)385614756 \|w (DE-600)2142897-9 \|x 1862-281X \|7 nnns
773	1	8	\|g volume:53 \|g year:2010 \|g number:1 \|g month:01 \|g pages:248-252
856	4	0	\|u https://dx.doi.org/10.1007/s11431-009-0320-0 \|z lizenzpflichtig \|3 Volltext
912			\|a GBV_USEFLAG_A
912			\|a SYSFLAG_A
912			\|a GBV_SPRINGER
912			\|a GBV_ILN_20
912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_224
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_702
936	b	k	\|a 50.00 \|q ASE
951			\|a AR
952			\|d 53 \|j 2010 \|e 1 \|c 01 \|h 248-252

Indexfelder

author_variant	j c jc f m fm z h zh q g qg
matchkey_str	article:1862281X:2010----::agaemlfbiainoteaomrnltorpysnee
hierarchy_sort_str	2010
bklnumber	50.00
publishDate	2010
allfields	10.1007/s11431-009-0320-0 doi (DE-627)SPR019262647 (SPR)s11431-009-0320-0-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Chu, JinKui verfasserin aut Large area mold fabrication for the nanoimprint lithography using electron beam lithography 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist. nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213 Meng, FanTao verfasserin aut Han, ZhiTao verfasserin aut Guo, Qing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 53(2010), 1 vom: Jan., Seite 248-252 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:53 year:2010 number:1 month:01 pages:248-252 https://dx.doi.org/10.1007/s11431-009-0320-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 53 2010 1 01 248-252
spelling	10.1007/s11431-009-0320-0 doi (DE-627)SPR019262647 (SPR)s11431-009-0320-0-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Chu, JinKui verfasserin aut Large area mold fabrication for the nanoimprint lithography using electron beam lithography 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist. nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213 Meng, FanTao verfasserin aut Han, ZhiTao verfasserin aut Guo, Qing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 53(2010), 1 vom: Jan., Seite 248-252 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:53 year:2010 number:1 month:01 pages:248-252 https://dx.doi.org/10.1007/s11431-009-0320-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 53 2010 1 01 248-252
allfields_unstemmed	10.1007/s11431-009-0320-0 doi (DE-627)SPR019262647 (SPR)s11431-009-0320-0-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Chu, JinKui verfasserin aut Large area mold fabrication for the nanoimprint lithography using electron beam lithography 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist. nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213 Meng, FanTao verfasserin aut Han, ZhiTao verfasserin aut Guo, Qing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 53(2010), 1 vom: Jan., Seite 248-252 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:53 year:2010 number:1 month:01 pages:248-252 https://dx.doi.org/10.1007/s11431-009-0320-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 53 2010 1 01 248-252
allfieldsGer	10.1007/s11431-009-0320-0 doi (DE-627)SPR019262647 (SPR)s11431-009-0320-0-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Chu, JinKui verfasserin aut Large area mold fabrication for the nanoimprint lithography using electron beam lithography 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist. nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213 Meng, FanTao verfasserin aut Han, ZhiTao verfasserin aut Guo, Qing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 53(2010), 1 vom: Jan., Seite 248-252 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:53 year:2010 number:1 month:01 pages:248-252 https://dx.doi.org/10.1007/s11431-009-0320-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 53 2010 1 01 248-252
allfieldsSound	10.1007/s11431-009-0320-0 doi (DE-627)SPR019262647 (SPR)s11431-009-0320-0-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Chu, JinKui verfasserin aut Large area mold fabrication for the nanoimprint lithography using electron beam lithography 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist. nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213 Meng, FanTao verfasserin aut Han, ZhiTao verfasserin aut Guo, Qing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 53(2010), 1 vom: Jan., Seite 248-252 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:53 year:2010 number:1 month:01 pages:248-252 https://dx.doi.org/10.1007/s11431-009-0320-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 53 2010 1 01 248-252
language	English
source	Enthalten in Science in China 53(2010), 1 vom: Jan., Seite 248-252 volume:53 year:2010 number:1 month:01 pages:248-252
sourceStr	Enthalten in Science in China 53(2010), 1 vom: Jan., Seite 248-252 volume:53 year:2010 number:1 month:01 pages:248-252
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	nanoimprint lithography mold fabrication electron beam lithography
dewey-raw	600
isfreeaccess_bool	false
container_title	Science in China
authorswithroles_txt_mv	Chu, JinKui @@aut@@ Meng, FanTao @@aut@@ Han, ZhiTao @@aut@@ Guo, Qing @@aut@@
publishDateDaySort_date	2010-01-01T00:00:00Z
hierarchy_top_id	385614756
dewey-sort	3600
id	SPR019262647
language_de	englisch
fullrecord	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR019262647</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111065346.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2010 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11431-009-0320-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR019262647</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11431-009-0320-0-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chu, JinKui</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large area mold fabrication for the nanoimprint lithography using electron beam lithography</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanoimprint lithography</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mold fabrication</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">electron beam lithography</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meng, FanTao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Han, ZhiTao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guo, Qing</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Science in China</subfield><subfield code="d">Heidelberg : Springer, 1997</subfield><subfield code="g">53(2010), 1 vom: Jan., Seite 248-252</subfield><subfield code="w">(DE-627)385614756</subfield><subfield code="w">(DE-600)2142897-9</subfield><subfield code="x">1862-281X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:53</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:248-252</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s11431-009-0320-0</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">53</subfield><subfield code="j">2010</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">248-252</subfield></datafield></record></collection>
author	Chu, JinKui
spellingShingle	Chu, JinKui ddc 600 bkl 50.00 misc nanoimprint lithography misc mold fabrication misc electron beam lithography Large area mold fabrication for the nanoimprint lithography using electron beam lithography
authorStr	Chu, JinKui
ppnlink_with_tag_str_mv	@@773@@(DE-627)385614756
format	electronic Article
dewey-ones	600 - Technology
delete_txt_mv	keep
author_role	aut aut aut aut
collection	springer
remote_str	true
illustrated	Not Illustrated
issn	1862-281X
topic_title	600 ASE 50.00 bkl Large area mold fabrication for the nanoimprint lithography using electron beam lithography nanoimprint lithography (dpeaa)DE-He213 mold fabrication (dpeaa)DE-He213 electron beam lithography (dpeaa)DE-He213
topic	ddc 600 bkl 50.00 misc nanoimprint lithography misc mold fabrication misc electron beam lithography
topic_unstemmed	ddc 600 bkl 50.00 misc nanoimprint lithography misc mold fabrication misc electron beam lithography
topic_browse	ddc 600 bkl 50.00 misc nanoimprint lithography misc mold fabrication misc electron beam lithography
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
format_main_str_mv	Text Zeitschrift/Artikel
carriertype_str_mv	cr
hierarchy_parent_title	Science in China
hierarchy_parent_id	385614756
dewey-tens	600 - Technology
hierarchy_top_title	Science in China
isfreeaccess_txt	false
familylinks_str_mv	(DE-627)385614756 (DE-600)2142897-9
title	Large area mold fabrication for the nanoimprint lithography using electron beam lithography
ctrlnum	(DE-627)SPR019262647 (SPR)s11431-009-0320-0-e
title_full	Large area mold fabrication for the nanoimprint lithography using electron beam lithography
author_sort	Chu, JinKui
journal	Science in China
journalStr	Science in China
lang_code	eng
isOA_bool	false
dewey-hundreds	600 - Technology
recordtype	marc
publishDateSort	2010
contenttype_str_mv	txt
container_start_page	248
author_browse	Chu, JinKui Meng, FanTao Han, ZhiTao Guo, Qing
container_volume	53
class	600 ASE 50.00 bkl
format_se	Elektronische Aufsätze
author-letter	Chu, JinKui
doi_str_mv	10.1007/s11431-009-0320-0
dewey-full	600
author2-role	verfasserin
title_sort	large area mold fabrication for the nanoimprint lithography using electron beam lithography
title_auth	Large area mold fabrication for the nanoimprint lithography using electron beam lithography
abstract	Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.
abstractGer	Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.
abstract_unstemmed	Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.
collection_details	GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702
container_issue	1
title_short	Large area mold fabrication for the nanoimprint lithography using electron beam lithography
url	https://dx.doi.org/10.1007/s11431-009-0320-0
remote_bool	true
author2	Meng, FanTao Han, ZhiTao Guo, Qing
author2Str	Meng, FanTao Han, ZhiTao Guo, Qing
ppnlink	385614756
mediatype_str_mv	c
isOA_txt	false
hochschulschrift_bool	false
doi_str	10.1007/s11431-009-0320-0
up_date	2024-07-04T00:52:40.916Z
_version_	1803607721555001344
fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR019262647</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111065346.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2010 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11431-009-0320-0</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR019262647</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11431-009-0320-0-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">600</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">50.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Chu, JinKui</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Large area mold fabrication for the nanoimprint lithography using electron beam lithography</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The mold fabrication is a critical issue for the development of nanoimprint lithography as an effective low-cost and mass production process. This paper describes the fabrication process developed to fabricate the large area nanoimprint molds on the silicon wafers. The optimization of e-beam exposure dose and pattern design is presented. The overlayer process is developed to improve the field stitching accuracy of e-beam exposure, and around 10 nm field stitching accuracy is obtained. By means of the optimization of the e-beam exposure dose, pattern design and overlayer process, large area nanoimprint molds having dense line structures with around 10 nm field stitching accuracy have been fabricated. The fabricated mold was used to imprint commercial imprinting resist.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">nanoimprint lithography</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">mold fabrication</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">electron beam lithography</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Meng, FanTao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Han, ZhiTao</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Guo, Qing</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Science in China</subfield><subfield code="d">Heidelberg : Springer, 1997</subfield><subfield code="g">53(2010), 1 vom: Jan., Seite 248-252</subfield><subfield code="w">(DE-627)385614756</subfield><subfield code="w">(DE-600)2142897-9</subfield><subfield code="x">1862-281X</subfield><subfield code="7">nnns</subfield></datafield><datafield tag="773" ind1="1" ind2="8"><subfield code="g">volume:53</subfield><subfield code="g">year:2010</subfield><subfield code="g">number:1</subfield><subfield code="g">month:01</subfield><subfield code="g">pages:248-252</subfield></datafield><datafield tag="856" ind1="4" ind2="0"><subfield code="u">https://dx.doi.org/10.1007/s11431-009-0320-0</subfield><subfield code="z">lizenzpflichtig</subfield><subfield code="3">Volltext</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_USEFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">SYSFLAG_A</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_SPRINGER</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_20</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_22</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_23</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_24</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_31</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_32</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_39</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_40</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_60</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_62</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_65</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_69</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_70</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_73</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_74</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_90</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_95</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_100</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_105</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_110</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_120</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_138</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_152</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_161</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_171</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_187</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_224</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_250</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_281</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_285</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_293</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_370</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_602</subfield></datafield><datafield tag="912" ind1=" " ind2=" "><subfield code="a">GBV_ILN_702</subfield></datafield><datafield tag="936" ind1="b" ind2="k"><subfield code="a">50.00</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="951" ind1=" " ind2=" "><subfield code="a">AR</subfield></datafield><datafield tag="952" ind1=" " ind2=" "><subfield code="d">53</subfield><subfield code="j">2010</subfield><subfield code="e">1</subfield><subfield code="c">01</subfield><subfield code="h">248-252</subfield></datafield></record></collection>
score	7.4021244

Nicht das Richtige dabei?

Schreiben Sie uns!

Large area mold fabrication for the nanoimprint lithography using electron beam lithography

Nicht das Richtige dabei?

Zugang & Verfügbarkeit

Vorhandene Bände

Nicht das Richtige dabei?