Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics
Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Bian, Jing [verfasserIn] Zhou, LaoBoYang [verfasserIn] Wan, XiaoDong [verfasserIn] Liu, MinXiao [verfasserIn] Zhu, Chen [verfasserIn] Huang, YongAn [verfasserIn] Yin, ZhouPing [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2018 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Science in China - Heidelberg : Springer, 1997, 62(2018), 2 vom: 10. Dez., Seite 233-242 |
|---|---|
| Übergeordnetes Werk: |
volume:62 ; year:2018 ; number:2 ; day:10 ; month:12 ; pages:233-242 |
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| DOI / URN: |
10.1007/s11431-018-9349-x |
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| 520 | |a Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. | ||
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| 650 | 4 | |a flexible electronics |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a thin film |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Yin, ZhouPing |e verfasserin |4 aut | |
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10.1007/s11431-018-9349-x doi (DE-627)SPR019294948 (SPR)s11431-018-9349-x-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Bian, Jing verfasserin aut Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. laser lift-off (dpeaa)DE-He213 interfacial peeling (dpeaa)DE-He213 delamination (dpeaa)DE-He213 flexible electronics (dpeaa)DE-He213 thin film (dpeaa)DE-He213 Zhou, LaoBoYang verfasserin aut Wan, XiaoDong verfasserin aut Liu, MinXiao verfasserin aut Zhu, Chen verfasserin aut Huang, YongAn verfasserin aut Yin, ZhouPing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 62(2018), 2 vom: 10. Dez., Seite 233-242 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:62 year:2018 number:2 day:10 month:12 pages:233-242 https://dx.doi.org/10.1007/s11431-018-9349-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 62 2018 2 10 12 233-242 |
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10.1007/s11431-018-9349-x doi (DE-627)SPR019294948 (SPR)s11431-018-9349-x-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Bian, Jing verfasserin aut Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. laser lift-off (dpeaa)DE-He213 interfacial peeling (dpeaa)DE-He213 delamination (dpeaa)DE-He213 flexible electronics (dpeaa)DE-He213 thin film (dpeaa)DE-He213 Zhou, LaoBoYang verfasserin aut Wan, XiaoDong verfasserin aut Liu, MinXiao verfasserin aut Zhu, Chen verfasserin aut Huang, YongAn verfasserin aut Yin, ZhouPing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 62(2018), 2 vom: 10. Dez., Seite 233-242 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:62 year:2018 number:2 day:10 month:12 pages:233-242 https://dx.doi.org/10.1007/s11431-018-9349-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 62 2018 2 10 12 233-242 |
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10.1007/s11431-018-9349-x doi (DE-627)SPR019294948 (SPR)s11431-018-9349-x-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Bian, Jing verfasserin aut Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. laser lift-off (dpeaa)DE-He213 interfacial peeling (dpeaa)DE-He213 delamination (dpeaa)DE-He213 flexible electronics (dpeaa)DE-He213 thin film (dpeaa)DE-He213 Zhou, LaoBoYang verfasserin aut Wan, XiaoDong verfasserin aut Liu, MinXiao verfasserin aut Zhu, Chen verfasserin aut Huang, YongAn verfasserin aut Yin, ZhouPing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 62(2018), 2 vom: 10. Dez., Seite 233-242 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:62 year:2018 number:2 day:10 month:12 pages:233-242 https://dx.doi.org/10.1007/s11431-018-9349-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 62 2018 2 10 12 233-242 |
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10.1007/s11431-018-9349-x doi (DE-627)SPR019294948 (SPR)s11431-018-9349-x-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Bian, Jing verfasserin aut Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. laser lift-off (dpeaa)DE-He213 interfacial peeling (dpeaa)DE-He213 delamination (dpeaa)DE-He213 flexible electronics (dpeaa)DE-He213 thin film (dpeaa)DE-He213 Zhou, LaoBoYang verfasserin aut Wan, XiaoDong verfasserin aut Liu, MinXiao verfasserin aut Zhu, Chen verfasserin aut Huang, YongAn verfasserin aut Yin, ZhouPing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 62(2018), 2 vom: 10. Dez., Seite 233-242 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:62 year:2018 number:2 day:10 month:12 pages:233-242 https://dx.doi.org/10.1007/s11431-018-9349-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 62 2018 2 10 12 233-242 |
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10.1007/s11431-018-9349-x doi (DE-627)SPR019294948 (SPR)s11431-018-9349-x-e DE-627 ger DE-627 rakwb eng 600 ASE 600 ASE 50.00 bkl Bian, Jing verfasserin aut Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics 2018 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. laser lift-off (dpeaa)DE-He213 interfacial peeling (dpeaa)DE-He213 delamination (dpeaa)DE-He213 flexible electronics (dpeaa)DE-He213 thin film (dpeaa)DE-He213 Zhou, LaoBoYang verfasserin aut Wan, XiaoDong verfasserin aut Liu, MinXiao verfasserin aut Zhu, Chen verfasserin aut Huang, YongAn verfasserin aut Yin, ZhouPing verfasserin aut Enthalten in Science in China Heidelberg : Springer, 1997 62(2018), 2 vom: 10. Dez., Seite 233-242 (DE-627)385614756 (DE-600)2142897-9 1862-281X nnns volume:62 year:2018 number:2 day:10 month:12 pages:233-242 https://dx.doi.org/10.1007/s11431-018-9349-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_152 GBV_ILN_161 GBV_ILN_171 GBV_ILN_187 GBV_ILN_224 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_702 50.00 ASE AR 62 2018 2 10 12 233-242 |
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This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. 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experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics |
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Experimental study of laser lift-off of ultra-thin polyimide film for flexible electronics |
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Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. |
| abstractGer |
Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. |
| abstract_unstemmed |
Abstract It is increasingly crucial for flexible electronics to efficiently and reliably peel large-area, ultra-thin flexible films off from rigid substrate serving as substrates of flexible electronics device, especially in industrial production. This paper experimentally investigated the mechanism and technologic characteristics of laser lift-off (LLO) process of ultra-thin (~ 2 μm) polyimide (PI) film. It was found increasingly difficult to obtain desirable ultra-thin PI film by LLO with the decrease of the film thickness. The optimal process parameters were achieved considering laser fluence and accumulated irradiation times (AIT), which were found to be strongly correlative to the thickness of PI film. The process mechanism of LLO of PI film was disclosed that laser ablation of interfacial PI will result in the formation of gas products between the PI and glass substrate, enabling the change of interface microstructures to reduce the interface bond strength. The amount of gas products mainly determines the result of LLO process for ultra-thin PI film, from residual adhesion to wrinkles or cracking. The strategy of multi-scanning based on multiple irradiations of low-energy laser pulses was presented to effectively achieve a reliable LLO process of ultra-thin PI film. This study provides an attractive route to optimize the LLO process for large-scale production of ultra-thin flexible electronics. |
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