Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation

Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and s...
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Autor*in:	Tymoshenko, M. M. [verfasserIn] Goriletsky, V. I. [verfasserIn] Shakhova, K. V. [verfasserIn] Sumin, V. I. [verfasserIn] Boyarintseva, Ya. A. [verfasserIn] Vasyliev, V. V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2009

Schlagwörter:	Crystallography Report High Angle Boundary Continuous Method CsBr Crystallization Front

Übergeordnetes Werk:	Enthalten in: Crystallography reports - Woodbury, NY : MAIK "Nauka/Interperiodica", 1993, 54(2009), 7 vom: 11. Dez.
Übergeordnetes Werk:	volume:54 ; year:2009 ; number:7 ; day:11 ; month:12

Links:	Volltext

DOI / URN:	10.1134/S1063774509070256

Katalog-ID:	SPR019441355

Internformat


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520			\|a Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.
650		4	\|a Crystallography Report \|7 (dpeaa)DE-He213
650		4	\|a High Angle Boundary \|7 (dpeaa)DE-He213
650		4	\|a Continuous Method \|7 (dpeaa)DE-He213
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650		4	\|a Crystallization Front \|7 (dpeaa)DE-He213
700	1		\|a Goriletsky, V. I. \|e verfasserin \|4 aut
700	1		\|a Shakhova, K. V. \|e verfasserin \|4 aut
700	1		\|a Sumin, V. I. \|e verfasserin \|4 aut
700	1		\|a Boyarintseva, Ya. A. \|e verfasserin \|4 aut
700	1		\|a Vasyliev, V. V. \|e verfasserin \|4 aut
773	0	8	\|i Enthalten in \|t Crystallography reports \|d Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 \|g 54(2009), 7 vom: 11. Dez. \|w (DE-627)312183232 \|w (DE-600)2005484-1 \|x 1562-689X \|7 nnns
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912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
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912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
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936	b	k	\|a 38.31 \|q ASE
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951			\|a AR
952			\|d 54 \|j 2009 \|e 7 \|b 11 \|c 12

Indexfelder

author_variant	m m t mm mmt v i g vi vig k v s kv kvs v i s vi vis y a b ya yab v v v vv vvv
matchkey_str	article:1562689X:2009----::ulnciaigersasrmetyotnosehdih
hierarchy_sort_str	2009
bklnumber	38.31 33.61
publishDate	2009
allfields	10.1134/S1063774509070256 doi (DE-627)SPR019441355 (SPR)S1063774509070256-e DE-627 ger DE-627 rakwb eng 540 530 ASE 38.31 bkl 33.61 bkl Tymoshenko, M. M. verfasserin aut Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed. Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213 Goriletsky, V. I. verfasserin aut Shakhova, K. V. verfasserin aut Sumin, V. I. verfasserin aut Boyarintseva, Ya. A. verfasserin aut Vasyliev, V. V. verfasserin aut Enthalten in Crystallography reports Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 54(2009), 7 vom: 11. Dez. (DE-627)312183232 (DE-600)2005484-1 1562-689X nnns volume:54 year:2009 number:7 day:11 month:12 https://dx.doi.org/10.1134/S1063774509070256 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA SSG-OPC-GGO SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 38.31 ASE 33.61 ASE AR 54 2009 7 11 12
spelling	10.1134/S1063774509070256 doi (DE-627)SPR019441355 (SPR)S1063774509070256-e DE-627 ger DE-627 rakwb eng 540 530 ASE 38.31 bkl 33.61 bkl Tymoshenko, M. M. verfasserin aut Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed. Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213 Goriletsky, V. I. verfasserin aut Shakhova, K. V. verfasserin aut Sumin, V. I. verfasserin aut Boyarintseva, Ya. A. verfasserin aut Vasyliev, V. V. verfasserin aut Enthalten in Crystallography reports Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 54(2009), 7 vom: 11. Dez. (DE-627)312183232 (DE-600)2005484-1 1562-689X nnns volume:54 year:2009 number:7 day:11 month:12 https://dx.doi.org/10.1134/S1063774509070256 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA SSG-OPC-GGO SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 38.31 ASE 33.61 ASE AR 54 2009 7 11 12
allfields_unstemmed	10.1134/S1063774509070256 doi (DE-627)SPR019441355 (SPR)S1063774509070256-e DE-627 ger DE-627 rakwb eng 540 530 ASE 38.31 bkl 33.61 bkl Tymoshenko, M. M. verfasserin aut Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed. Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213 Goriletsky, V. I. verfasserin aut Shakhova, K. V. verfasserin aut Sumin, V. I. verfasserin aut Boyarintseva, Ya. A. verfasserin aut Vasyliev, V. V. verfasserin aut Enthalten in Crystallography reports Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 54(2009), 7 vom: 11. Dez. (DE-627)312183232 (DE-600)2005484-1 1562-689X nnns volume:54 year:2009 number:7 day:11 month:12 https://dx.doi.org/10.1134/S1063774509070256 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA SSG-OPC-GGO SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 38.31 ASE 33.61 ASE AR 54 2009 7 11 12
allfieldsGer	10.1134/S1063774509070256 doi (DE-627)SPR019441355 (SPR)S1063774509070256-e DE-627 ger DE-627 rakwb eng 540 530 ASE 38.31 bkl 33.61 bkl Tymoshenko, M. M. verfasserin aut Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed. Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213 Goriletsky, V. I. verfasserin aut Shakhova, K. V. verfasserin aut Sumin, V. I. verfasserin aut Boyarintseva, Ya. A. verfasserin aut Vasyliev, V. V. verfasserin aut Enthalten in Crystallography reports Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 54(2009), 7 vom: 11. Dez. (DE-627)312183232 (DE-600)2005484-1 1562-689X nnns volume:54 year:2009 number:7 day:11 month:12 https://dx.doi.org/10.1134/S1063774509070256 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA SSG-OPC-GGO SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 38.31 ASE 33.61 ASE AR 54 2009 7 11 12
allfieldsSound	10.1134/S1063774509070256 doi (DE-627)SPR019441355 (SPR)S1063774509070256-e DE-627 ger DE-627 rakwb eng 540 530 ASE 38.31 bkl 33.61 bkl Tymoshenko, M. M. verfasserin aut Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed. Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213 Goriletsky, V. I. verfasserin aut Shakhova, K. V. verfasserin aut Sumin, V. I. verfasserin aut Boyarintseva, Ya. A. verfasserin aut Vasyliev, V. V. verfasserin aut Enthalten in Crystallography reports Woodbury, NY : MAIK "Nauka/Interperiodica", 1993 54(2009), 7 vom: 11. Dez. (DE-627)312183232 (DE-600)2005484-1 1562-689X nnns volume:54 year:2009 number:7 day:11 month:12 https://dx.doi.org/10.1134/S1063774509070256 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA SSG-OPC-GGO SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 38.31 ASE 33.61 ASE AR 54 2009 7 11 12
language	English
source	Enthalten in Crystallography reports 54(2009), 7 vom: 11. Dez. volume:54 year:2009 number:7 day:11 month:12
sourceStr	Enthalten in Crystallography reports 54(2009), 7 vom: 11. Dez. volume:54 year:2009 number:7 day:11 month:12
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Crystallography Report High Angle Boundary Continuous Method CsBr Crystallization Front
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container_title	Crystallography reports
authorswithroles_txt_mv	Tymoshenko, M. M. @@aut@@ Goriletsky, V. I. @@aut@@ Shakhova, K. V. @@aut@@ Sumin, V. I. @@aut@@ Boyarintseva, Ya. A. @@aut@@ Vasyliev, V. V. @@aut@@
publishDateDaySort_date	2009-12-11T00:00:00Z
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M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. 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author	Tymoshenko, M. M.
spellingShingle	Tymoshenko, M. M. ddc 540 bkl 38.31 bkl 33.61 misc Crystallography Report misc High Angle Boundary misc Continuous Method misc CsBr misc Crystallization Front Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation
authorStr	Tymoshenko, M. M.
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topic_title	540 530 ASE 38.31 bkl 33.61 bkl Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation Crystallography Report (dpeaa)DE-He213 High Angle Boundary (dpeaa)DE-He213 Continuous Method (dpeaa)DE-He213 CsBr (dpeaa)DE-He213 Crystallization Front (dpeaa)DE-He213
topic	ddc 540 bkl 38.31 bkl 33.61 misc Crystallography Report misc High Angle Boundary misc Continuous Method misc CsBr misc Crystallization Front
topic_unstemmed	ddc 540 bkl 38.31 bkl 33.61 misc Crystallography Report misc High Angle Boundary misc Continuous Method misc CsBr misc Crystallization Front
topic_browse	ddc 540 bkl 38.31 bkl 33.61 misc Crystallography Report misc High Angle Boundary misc Continuous Method misc CsBr misc Crystallization Front
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title	Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation
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title_full	Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation
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title_sort	pulling csi(na) single crystals from melt by continuous method without plastic deformation
title_auth	Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation
abstract	Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.
abstractGer	Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.
abstract_unstemmed	Abstract It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.
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container_issue	7
title_short	Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation
url	https://dx.doi.org/10.1134/S1063774509070256
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author2	Goriletsky, V. I. Shakhova, K. V. Sumin, V. I. Boyarintseva, Ya. A. Vasyliev, V. V.
author2Str	Goriletsky, V. I. Shakhova, K. V. Sumin, V. I. Boyarintseva, Ya. A. Vasyliev, V. V.
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doi_str	10.1134/S1063774509070256
up_date	2024-07-04T01:37:45.238Z
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Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation

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Zugang & Verfügbarkeit

Vorhandene Bände

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