Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells
Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Adiyatullin, A. F. [verfasserIn] Belykh, V. V. [verfasserIn] Kozlovsky, V. I. [verfasserIn] Krivobok, V. S. [verfasserIn] Martovitsky, V. P. [verfasserIn] Nikolaev, S. N. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Journal of experimental and theoretical physics - Heidelberg [u.a.] : Springer, 1993, 115(2012), 5 vom: Nov., Seite 885-896 |
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| Übergeordnetes Werk: |
volume:115 ; year:2012 ; number:5 ; month:11 ; pages:885-896 |
| Links: |
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| DOI / URN: |
10.1134/S1063776112090014 |
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| Katalog-ID: |
SPR01949677X |
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| 245 | 1 | 0 | |a Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
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| 520 | |a Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. | ||
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| 650 | 4 | |a Free Exciton |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Exciton Band |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Belykh, V. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Kozlovsky, V. I. |e verfasserin |4 aut | |
| 700 | 1 | |a Krivobok, V. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Martovitsky, V. P. |e verfasserin |4 aut | |
| 700 | 1 | |a Nikolaev, S. N. |e verfasserin |4 aut | |
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10.1134/S1063776112090014 doi (DE-627)SPR01949677X (SPR)S1063776112090014-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Adiyatullin, A. F. verfasserin aut Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 Belykh, V. V. verfasserin aut Kozlovsky, V. I. verfasserin aut Krivobok, V. S. verfasserin aut Martovitsky, V. P. verfasserin aut Nikolaev, S. N. verfasserin aut Enthalten in Journal of experimental and theoretical physics Heidelberg [u.a.] : Springer, 1993 115(2012), 5 vom: Nov., Seite 885-896 (DE-627)268754837 (DE-600)1472441-8 1090-6509 nnns volume:115 year:2012 number:5 month:11 pages:885-896 https://dx.doi.org/10.1134/S1063776112090014 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 115 2012 5 11 885-896 |
| spelling |
10.1134/S1063776112090014 doi (DE-627)SPR01949677X (SPR)S1063776112090014-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Adiyatullin, A. F. verfasserin aut Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 Belykh, V. V. verfasserin aut Kozlovsky, V. I. verfasserin aut Krivobok, V. S. verfasserin aut Martovitsky, V. P. verfasserin aut Nikolaev, S. N. verfasserin aut Enthalten in Journal of experimental and theoretical physics Heidelberg [u.a.] : Springer, 1993 115(2012), 5 vom: Nov., Seite 885-896 (DE-627)268754837 (DE-600)1472441-8 1090-6509 nnns volume:115 year:2012 number:5 month:11 pages:885-896 https://dx.doi.org/10.1134/S1063776112090014 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 115 2012 5 11 885-896 |
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10.1134/S1063776112090014 doi (DE-627)SPR01949677X (SPR)S1063776112090014-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Adiyatullin, A. F. verfasserin aut Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 Belykh, V. V. verfasserin aut Kozlovsky, V. I. verfasserin aut Krivobok, V. S. verfasserin aut Martovitsky, V. P. verfasserin aut Nikolaev, S. N. verfasserin aut Enthalten in Journal of experimental and theoretical physics Heidelberg [u.a.] : Springer, 1993 115(2012), 5 vom: Nov., Seite 885-896 (DE-627)268754837 (DE-600)1472441-8 1090-6509 nnns volume:115 year:2012 number:5 month:11 pages:885-896 https://dx.doi.org/10.1134/S1063776112090014 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 115 2012 5 11 885-896 |
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10.1134/S1063776112090014 doi (DE-627)SPR01949677X (SPR)S1063776112090014-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Adiyatullin, A. F. verfasserin aut Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 Belykh, V. V. verfasserin aut Kozlovsky, V. I. verfasserin aut Krivobok, V. S. verfasserin aut Martovitsky, V. P. verfasserin aut Nikolaev, S. N. verfasserin aut Enthalten in Journal of experimental and theoretical physics Heidelberg [u.a.] : Springer, 1993 115(2012), 5 vom: Nov., Seite 885-896 (DE-627)268754837 (DE-600)1472441-8 1090-6509 nnns volume:115 year:2012 number:5 month:11 pages:885-896 https://dx.doi.org/10.1134/S1063776112090014 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 115 2012 5 11 885-896 |
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10.1134/S1063776112090014 doi (DE-627)SPR01949677X (SPR)S1063776112090014-e DE-627 ger DE-627 rakwb eng 530 ASE 33.00 bkl Adiyatullin, A. F. verfasserin aut Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 Belykh, V. V. verfasserin aut Kozlovsky, V. I. verfasserin aut Krivobok, V. S. verfasserin aut Martovitsky, V. P. verfasserin aut Nikolaev, S. N. verfasserin aut Enthalten in Journal of experimental and theoretical physics Heidelberg [u.a.] : Springer, 1993 115(2012), 5 vom: Nov., Seite 885-896 (DE-627)268754837 (DE-600)1472441-8 1090-6509 nnns volume:115 year:2012 number:5 month:11 pages:885-896 https://dx.doi.org/10.1134/S1063776112090014 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OPC-MAT SSG-OPC-ASE GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.00 ASE AR 115 2012 5 11 885-896 |
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Enthalten in Journal of experimental and theoretical physics 115(2012), 5 vom: Nov., Seite 885-896 volume:115 year:2012 number:5 month:11 pages:885-896 |
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Adiyatullin, A. F. @@aut@@ Belykh, V. V. @@aut@@ Kozlovsky, V. I. @@aut@@ Krivobok, V. S. @@aut@@ Martovitsky, V. P. @@aut@@ Nikolaev, S. N. @@aut@@ |
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F.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Reflection Spectrum</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Trion</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Exciton State</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Free Exciton</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Exciton Band</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Belykh, V. 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Adiyatullin, A. F. |
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Adiyatullin, A. F. ddc 530 bkl 33.00 misc Reflection Spectrum misc Trion misc Exciton State misc Free Exciton misc Exciton Band Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
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530 ASE 33.00 bkl Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells Reflection Spectrum (dpeaa)DE-He213 Trion (dpeaa)DE-He213 Exciton State (dpeaa)DE-He213 Free Exciton (dpeaa)DE-He213 Exciton Band (dpeaa)DE-He213 |
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ddc 530 bkl 33.00 misc Reflection Spectrum misc Trion misc Exciton State misc Free Exciton misc Exciton Band |
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ddc 530 bkl 33.00 misc Reflection Spectrum misc Trion misc Exciton State misc Free Exciton misc Exciton Band |
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Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
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(DE-627)SPR01949677X (SPR)S1063776112090014-e |
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Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
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Adiyatullin, A. F. |
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Journal of experimental and theoretical physics |
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Adiyatullin, A. F. Belykh, V. V. Kozlovsky, V. I. Krivobok, V. S. Martovitsky, V. P. Nikolaev, S. N. |
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Elektronische Aufsätze |
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Adiyatullin, A. F. |
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verfasserin |
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effect of heteroboundary spreading on the properties of exciton states in zn(cd)se/znmgsse quantum wells |
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Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
| abstract |
Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. |
| abstractGer |
Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. |
| abstract_unstemmed |
Abstract Exciton states in Zn(Cd)Se/ZnMgSSe quantum wells with different diffusion spreading of interfaces are studied by optical spectroscopy methods. It is shown that the emission spectrum of quantum wells at low temperatures is determined by free excitons and bound excitons on neutral donors. The nonlinear dependence of the stationary photoluminescence intensity on the excitation power density and the biexponential luminescence decay are explained by the neutralization of charged defects upon photoexcitation of heterostructures. With the stationary illumination on, durable (about 40 min) reversible changes in the reflection coefficient near the exciton resonances of quantum wells are observed. It is shown that, along with the shift of exciton levels, the spreading of heteroboundaries leads to three effects: an increase in the excitonphonon interaction, an increase in the energy shift between the emission lines of free and bound excitons, and a decrease in the decay time of exciton luminescence in a broad temperature range. The main reasons for these effects are discussed. |
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5 |
| title_short |
Effect of heteroboundary spreading on the properties of exciton states in Zn(Cd)Se/ZnMgSSe quantum wells |
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https://dx.doi.org/10.1134/S1063776112090014 |
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Belykh, V. V. Kozlovsky, V. I. Krivobok, V. S. Martovitsky, V. P. Nikolaev, S. N. |
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Belykh, V. V. Kozlovsky, V. I. Krivobok, V. S. Martovitsky, V. P. Nikolaev, S. N. |
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10.1134/S1063776112090014 |
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2024-07-04T01:51:58.031Z |
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| score |
7.4010954 |