The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)

Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together...
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Autor*in:	Xu, Jianli [verfasserIn] Wu, Lin [verfasserIn] Li, Yufan [verfasserIn] Tian, Dai [verfasserIn] Zhu, Kai [verfasserIn] Gong, Xinxin [verfasserIn] Jin, Xiaofeng [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2015

Schlagwörter:	Anomalous Hall effect Fe Skew scattering Side jump Intrinsic anomalous Hall effect

Übergeordnetes Werk:	Enthalten in: Chinese science bulletin - Beijing, China : Chinese Acad. of Sciences, 1997, 60(2015), 14 vom: 26. Juni, Seite 1261-1265
Übergeordnetes Werk:	volume:60 ; year:2015 ; number:14 ; day:26 ; month:06 ; pages:1261-1265

Links:	Volltext

DOI / URN:	10.1007/s11434-015-0831-y

Katalog-ID:	SPR019545649

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520			\|a Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
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allfields	10.1007/s11434-015-0831-y doi (DE-627)SPR019545649 (SPR)s11434-015-0831-y-e DE-627 ger DE-627 rakwb eng 500 ASE 30.00 bkl Xu, Jianli verfasserin aut The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe. Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213 Wu, Lin verfasserin aut Li, Yufan verfasserin aut Tian, Dai verfasserin aut Zhu, Kai verfasserin aut Gong, Xinxin verfasserin aut Jin, Xiaofeng verfasserin aut Enthalten in Chinese science bulletin Beijing, China : Chinese Acad. of Sciences, 1997 60(2015), 14 vom: 26. Juni, Seite 1261-1265 (DE-627)341897809 (DE-600)2069521-4 1861-9541 nnns volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265 https://dx.doi.org/10.1007/s11434-015-0831-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_70 GBV_ILN_95 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 30.00 ASE AR 60 2015 14 26 06 1261-1265
spelling	10.1007/s11434-015-0831-y doi (DE-627)SPR019545649 (SPR)s11434-015-0831-y-e DE-627 ger DE-627 rakwb eng 500 ASE 30.00 bkl Xu, Jianli verfasserin aut The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe. Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213 Wu, Lin verfasserin aut Li, Yufan verfasserin aut Tian, Dai verfasserin aut Zhu, Kai verfasserin aut Gong, Xinxin verfasserin aut Jin, Xiaofeng verfasserin aut Enthalten in Chinese science bulletin Beijing, China : Chinese Acad. of Sciences, 1997 60(2015), 14 vom: 26. Juni, Seite 1261-1265 (DE-627)341897809 (DE-600)2069521-4 1861-9541 nnns volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265 https://dx.doi.org/10.1007/s11434-015-0831-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_70 GBV_ILN_95 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 30.00 ASE AR 60 2015 14 26 06 1261-1265
allfields_unstemmed	10.1007/s11434-015-0831-y doi (DE-627)SPR019545649 (SPR)s11434-015-0831-y-e DE-627 ger DE-627 rakwb eng 500 ASE 30.00 bkl Xu, Jianli verfasserin aut The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe. Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213 Wu, Lin verfasserin aut Li, Yufan verfasserin aut Tian, Dai verfasserin aut Zhu, Kai verfasserin aut Gong, Xinxin verfasserin aut Jin, Xiaofeng verfasserin aut Enthalten in Chinese science bulletin Beijing, China : Chinese Acad. of Sciences, 1997 60(2015), 14 vom: 26. Juni, Seite 1261-1265 (DE-627)341897809 (DE-600)2069521-4 1861-9541 nnns volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265 https://dx.doi.org/10.1007/s11434-015-0831-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_70 GBV_ILN_95 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 30.00 ASE AR 60 2015 14 26 06 1261-1265
allfieldsGer	10.1007/s11434-015-0831-y doi (DE-627)SPR019545649 (SPR)s11434-015-0831-y-e DE-627 ger DE-627 rakwb eng 500 ASE 30.00 bkl Xu, Jianli verfasserin aut The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe. Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213 Wu, Lin verfasserin aut Li, Yufan verfasserin aut Tian, Dai verfasserin aut Zhu, Kai verfasserin aut Gong, Xinxin verfasserin aut Jin, Xiaofeng verfasserin aut Enthalten in Chinese science bulletin Beijing, China : Chinese Acad. of Sciences, 1997 60(2015), 14 vom: 26. Juni, Seite 1261-1265 (DE-627)341897809 (DE-600)2069521-4 1861-9541 nnns volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265 https://dx.doi.org/10.1007/s11434-015-0831-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_70 GBV_ILN_95 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 30.00 ASE AR 60 2015 14 26 06 1261-1265
allfieldsSound	10.1007/s11434-015-0831-y doi (DE-627)SPR019545649 (SPR)s11434-015-0831-y-e DE-627 ger DE-627 rakwb eng 500 ASE 30.00 bkl Xu, Jianli verfasserin aut The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe. Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213 Wu, Lin verfasserin aut Li, Yufan verfasserin aut Tian, Dai verfasserin aut Zhu, Kai verfasserin aut Gong, Xinxin verfasserin aut Jin, Xiaofeng verfasserin aut Enthalten in Chinese science bulletin Beijing, China : Chinese Acad. of Sciences, 1997 60(2015), 14 vom: 26. Juni, Seite 1261-1265 (DE-627)341897809 (DE-600)2069521-4 1861-9541 nnns volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265 https://dx.doi.org/10.1007/s11434-015-0831-y lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_70 GBV_ILN_95 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2005 GBV_ILN_2007 GBV_ILN_2009 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2059 GBV_ILN_2064 GBV_ILN_2068 GBV_ILN_2106 GBV_ILN_2108 GBV_ILN_2111 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 30.00 ASE AR 60 2015 14 26 06 1261-1265
language	English
source	Enthalten in Chinese science bulletin 60(2015), 14 vom: 26. Juni, Seite 1261-1265 volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265
sourceStr	Enthalten in Chinese science bulletin 60(2015), 14 vom: 26. Juni, Seite 1261-1265 volume:60 year:2015 number:14 day:26 month:06 pages:1261-1265
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Anomalous Hall effect Fe Skew scattering Side jump Intrinsic anomalous Hall effect
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container_title	Chinese science bulletin
authorswithroles_txt_mv	Xu, Jianli @@aut@@ Wu, Lin @@aut@@ Li, Yufan @@aut@@ Tian, Dai @@aut@@ Zhu, Kai @@aut@@ Gong, Xinxin @@aut@@ Jin, Xiaofeng @@aut@@
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author	Xu, Jianli
spellingShingle	Xu, Jianli ddc 500 bkl 30.00 misc Anomalous Hall effect misc Fe misc Skew scattering misc Side jump misc Intrinsic anomalous Hall effect The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
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topic_title	500 ASE 30.00 bkl The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) Anomalous Hall effect (dpeaa)DE-He213 Fe (dpeaa)DE-He213 Skew scattering (dpeaa)DE-He213 Side jump (dpeaa)DE-He213 Intrinsic anomalous Hall effect (dpeaa)DE-He213
topic	ddc 500 bkl 30.00 misc Anomalous Hall effect misc Fe misc Skew scattering misc Side jump misc Intrinsic anomalous Hall effect
topic_unstemmed	ddc 500 bkl 30.00 misc Anomalous Hall effect misc Fe misc Skew scattering misc Side jump misc Intrinsic anomalous Hall effect
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title	The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
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title_full	The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
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author_browse	Xu, Jianli Wu, Lin Li, Yufan Tian, Dai Zhu, Kai Gong, Xinxin Jin, Xiaofeng
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title_sort	anomalous hall effect in epitaxial fe(110) films grown on gaas(110)
title_auth	The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
abstract	Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
abstractGer	Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
abstract_unstemmed	Abstract The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110) is investigated as a function of both film thickness and temperature. The Berry curvature-induced intrinsic contribution of 996 %$\Omega ^{-1}\hbox { cm}^{-1}%$ is determined experimentally for the first time. Together with 821 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(111) and 1100 %$\Omega ^{-1}\hbox { cm}^{-1}%$ in Fe(001) obtained earlier, we show unambiguously the anisotropy of the Berry curvature contribution to the anomalous Hall effect in single-crystal Fe.
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title_short	The anomalous Hall effect in epitaxial Fe(110) films grown on GaAs(110)
url	https://dx.doi.org/10.1007/s11434-015-0831-y
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author2	Wu, Lin Li, Yufan Tian, Dai Zhu, Kai Gong, Xinxin Jin, Xiaofeng
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up_date	2024-07-04T02:04:01.154Z
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