Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates
Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Lutsenko, E. V. [verfasserIn] Rzheutskii, N. V. [verfasserIn] Pavlovskii, V. N. [verfasserIn] Yablonskii, G. P. [verfasserIn] Nechaev, D. V. [verfasserIn] Sitnikova, A. A. [verfasserIn] Ratnikov, V. V. [verfasserIn] Kuznetsova, Ya. V. [verfasserIn] Zhmerik, V. N. [verfasserIn] Ivanov, S. V. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Physics of the solid state - College Park, Md. : Inst., 1997, 55(2013), 10 vom: Okt., Seite 2173-2181 |
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| Übergeordnetes Werk: |
volume:55 ; year:2013 ; number:10 ; month:10 ; pages:2173-2181 |
| Links: |
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| DOI / URN: |
10.1134/S106378341310020X |
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| Katalog-ID: |
SPR019662033 |
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| 245 | 1 | 0 | |a Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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| 520 | |a Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. | ||
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| 650 | 4 | |a Reflection High Energy Electron Diffraction |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Waveguide Layer |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Stimulate Emission |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a AlGaN Layer |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Rzheutskii, N. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Pavlovskii, V. N. |e verfasserin |4 aut | |
| 700 | 1 | |a Yablonskii, G. P. |e verfasserin |4 aut | |
| 700 | 1 | |a Nechaev, D. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Sitnikova, A. A. |e verfasserin |4 aut | |
| 700 | 1 | |a Ratnikov, V. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Kuznetsova, Ya. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Zhmerik, V. N. |e verfasserin |4 aut | |
| 700 | 1 | |a Ivanov, S. V. |e verfasserin |4 aut | |
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10.1134/S106378341310020X doi (DE-627)SPR019662033 (SPR)S106378341310020X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Lutsenko, E. V. verfasserin aut Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 Rzheutskii, N. V. verfasserin aut Pavlovskii, V. N. verfasserin aut Yablonskii, G. P. verfasserin aut Nechaev, D. V. verfasserin aut Sitnikova, A. A. verfasserin aut Ratnikov, V. V. verfasserin aut Kuznetsova, Ya. V. verfasserin aut Zhmerik, V. N. verfasserin aut Ivanov, S. V. verfasserin aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 55(2013), 10 vom: Okt., Seite 2173-2181 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:55 year:2013 number:10 month:10 pages:2173-2181 https://dx.doi.org/10.1134/S106378341310020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 55 2013 10 10 2173-2181 |
| spelling |
10.1134/S106378341310020X doi (DE-627)SPR019662033 (SPR)S106378341310020X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Lutsenko, E. V. verfasserin aut Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 Rzheutskii, N. V. verfasserin aut Pavlovskii, V. N. verfasserin aut Yablonskii, G. P. verfasserin aut Nechaev, D. V. verfasserin aut Sitnikova, A. A. verfasserin aut Ratnikov, V. V. verfasserin aut Kuznetsova, Ya. V. verfasserin aut Zhmerik, V. N. verfasserin aut Ivanov, S. V. verfasserin aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 55(2013), 10 vom: Okt., Seite 2173-2181 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:55 year:2013 number:10 month:10 pages:2173-2181 https://dx.doi.org/10.1134/S106378341310020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 55 2013 10 10 2173-2181 |
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10.1134/S106378341310020X doi (DE-627)SPR019662033 (SPR)S106378341310020X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Lutsenko, E. V. verfasserin aut Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 Rzheutskii, N. V. verfasserin aut Pavlovskii, V. N. verfasserin aut Yablonskii, G. P. verfasserin aut Nechaev, D. V. verfasserin aut Sitnikova, A. A. verfasserin aut Ratnikov, V. V. verfasserin aut Kuznetsova, Ya. V. verfasserin aut Zhmerik, V. N. verfasserin aut Ivanov, S. V. verfasserin aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 55(2013), 10 vom: Okt., Seite 2173-2181 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:55 year:2013 number:10 month:10 pages:2173-2181 https://dx.doi.org/10.1134/S106378341310020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 55 2013 10 10 2173-2181 |
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10.1134/S106378341310020X doi (DE-627)SPR019662033 (SPR)S106378341310020X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Lutsenko, E. V. verfasserin aut Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 Rzheutskii, N. V. verfasserin aut Pavlovskii, V. N. verfasserin aut Yablonskii, G. P. verfasserin aut Nechaev, D. V. verfasserin aut Sitnikova, A. A. verfasserin aut Ratnikov, V. V. verfasserin aut Kuznetsova, Ya. V. verfasserin aut Zhmerik, V. N. verfasserin aut Ivanov, S. V. verfasserin aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 55(2013), 10 vom: Okt., Seite 2173-2181 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:55 year:2013 number:10 month:10 pages:2173-2181 https://dx.doi.org/10.1134/S106378341310020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 55 2013 10 10 2173-2181 |
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10.1134/S106378341310020X doi (DE-627)SPR019662033 (SPR)S106378341310020X-e DE-627 ger DE-627 rakwb eng 530 ASE 33.60 bkl Lutsenko, E. V. verfasserin aut Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 Rzheutskii, N. V. verfasserin aut Pavlovskii, V. N. verfasserin aut Yablonskii, G. P. verfasserin aut Nechaev, D. V. verfasserin aut Sitnikova, A. A. verfasserin aut Ratnikov, V. V. verfasserin aut Kuznetsova, Ya. V. verfasserin aut Zhmerik, V. N. verfasserin aut Ivanov, S. V. verfasserin aut Enthalten in Physics of the solid state College Park, Md. : Inst., 1997 55(2013), 10 vom: Okt., Seite 2173-2181 (DE-627)269017275 (DE-600)1473624-X 1090-6460 nnns volume:55 year:2013 number:10 month:10 pages:2173-2181 https://dx.doi.org/10.1134/S106378341310020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.60 ASE AR 55 2013 10 10 2173-2181 |
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Enthalten in Physics of the solid state 55(2013), 10 vom: Okt., Seite 2173-2181 volume:55 year:2013 number:10 month:10 pages:2173-2181 |
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Barrier Layer Reflection High Energy Electron Diffraction Waveguide Layer Stimulate Emission AlGaN Layer |
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Lutsenko, E. V. @@aut@@ Rzheutskii, N. V. @@aut@@ Pavlovskii, V. N. @@aut@@ Yablonskii, G. P. @@aut@@ Nechaev, D. V. @@aut@@ Sitnikova, A. A. @@aut@@ Ratnikov, V. V. @@aut@@ Kuznetsova, Ya. V. @@aut@@ Zhmerik, V. N. @@aut@@ Ivanov, S. V. @@aut@@ |
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V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2013</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Barrier Layer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Reflection High Energy Electron Diffraction</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Waveguide Layer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Stimulate Emission</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">AlGaN Layer</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Rzheutskii, N. 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Lutsenko, E. V. |
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Lutsenko, E. V. ddc 530 bkl 33.60 misc Barrier Layer misc Reflection High Energy Electron Diffraction misc Waveguide Layer misc Stimulate Emission misc AlGaN Layer Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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530 ASE 33.60 bkl Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates Barrier Layer (dpeaa)DE-He213 Reflection High Energy Electron Diffraction (dpeaa)DE-He213 Waveguide Layer (dpeaa)DE-He213 Stimulate Emission (dpeaa)DE-He213 AlGaN Layer (dpeaa)DE-He213 |
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ddc 530 bkl 33.60 misc Barrier Layer misc Reflection High Energy Electron Diffraction misc Waveguide Layer misc Stimulate Emission misc AlGaN Layer |
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ddc 530 bkl 33.60 misc Barrier Layer misc Reflection High Energy Electron Diffraction misc Waveguide Layer misc Stimulate Emission misc AlGaN Layer |
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Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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Lutsenko, E. V. |
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Lutsenko, E. V. Rzheutskii, N. V. Pavlovskii, V. N. Yablonskii, G. P. Nechaev, D. V. Sitnikova, A. A. Ratnikov, V. V. Kuznetsova, Ya. V. Zhmerik, V. N. Ivanov, S. V. |
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spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on algan compounds grown by molecular beam epitaxy on c-sapphire substrates |
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Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
| abstract |
Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. |
| abstractGer |
Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. |
| abstract_unstemmed |
Abstract This paper reports on the results of investigations of the spontaneous and stimulated luminescence in AlGaN heterostructures with a single quantum well and a high Al content (up to ∼80 mol % in barrier layers), which were grown by plasma assisted molecular beam epitaxy (PAMBE) on c-sapphire substrates. It has been demonstrated that the stimulated emission occurs in the mid-ultraviolet range of the spectrum at wavelengths of 259, 270, and 289 nm with threshold excitation power densities of 1500, 900, and 700 kW/$ cm^{2} $, respectively. It has been shown that there exists a possibility of TE polarization (E ⊥ c) of both stimulated and spontaneous luminescence down to wavelengths of 259 nm. |
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10 |
| title_short |
Spontaneous and stimulated emission in the mid-ultraviolet range of quantum-well heterostructures based on AlGaN compounds grown by molecular beam epitaxy on c-sapphire substrates |
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https://dx.doi.org/10.1134/S106378341310020X |
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Rzheutskii, N. V. Pavlovskii, V. N. Yablonskii, G. P. Nechaev, D. V. Sitnikova, A. A. Ratnikov, V. V. Kuznetsova, Ya. V. Zhmerik, V. N. Ivanov, S. V. |
| author2Str |
Rzheutskii, N. V. Pavlovskii, V. N. Yablonskii, G. P. Nechaev, D. V. Sitnikova, A. A. Ratnikov, V. V. Kuznetsova, Ya. V. Zhmerik, V. N. Ivanov, S. V. |
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10.1134/S106378341310020X |
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2024-07-04T02:29:30.428Z |
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1803613813269856256 |
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| score |
7.396736 |