Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural...
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Gespeichert in:

Autor*in:	Sagunova, I. V. [verfasserIn] Shevyakov, V. I. [verfasserIn] Gavrilov, S. A. [verfasserIn] Belov, A. N. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2010

Schlagwörter:	Oxide Layer Metal Film Titanium Nitride Natural Oxide Layer Oxide Layer Thickness

Übergeordnetes Werk:	Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 44(2010), 13 vom: Dez., Seite 1709-1713
Übergeordnetes Werk:	volume:44 ; year:2010 ; number:13 ; month:12 ; pages:1709-1713

Links:	Volltext

DOI / URN:	10.1134/S106378261013018X

Katalog-ID:	SPR019721315

Internformat


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520			\|a Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.
650		4	\|a Oxide Layer \|7 (dpeaa)DE-He213
650		4	\|a Metal Film \|7 (dpeaa)DE-He213
650		4	\|a Titanium Nitride \|7 (dpeaa)DE-He213
650		4	\|a Natural Oxide Layer \|7 (dpeaa)DE-He213
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700	1		\|a Shevyakov, V. I. \|e verfasserin \|4 aut
700	1		\|a Gavrilov, S. A. \|e verfasserin \|4 aut
700	1		\|a Belov, A. N. \|e verfasserin \|4 aut
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912			\|a GBV_ILN_22
912			\|a GBV_ILN_23
912			\|a GBV_ILN_24
912			\|a GBV_ILN_31
912			\|a GBV_ILN_32
912			\|a GBV_ILN_39
912			\|a GBV_ILN_40
912			\|a GBV_ILN_60
912			\|a GBV_ILN_62
912			\|a GBV_ILN_63
912			\|a GBV_ILN_65
912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_101
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_206
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2056
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
912			\|a GBV_ILN_4307
912			\|a GBV_ILN_4313
912			\|a GBV_ILN_4322
912			\|a GBV_ILN_4323
912			\|a GBV_ILN_4324
912			\|a GBV_ILN_4325
912			\|a GBV_ILN_4326
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
912			\|a GBV_ILN_4393
912			\|a GBV_ILN_4700
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951			\|a AR
952			\|d 44 \|j 2010 \|e 13 \|c 12 \|h 1709-1713

Indexfelder

author_variant	i v s iv ivs v i s vi vis s a g sa sag a n b an anb
matchkey_str	article:10906479:2010----::ieisfoapoexdtooutahnnttt
hierarchy_sort_str	2010
bklnumber	53.00 33.00
publishDate	2010
allfields	10.1134/S106378261013018X doi (DE-627)SPR019721315 (SPR)S106378261013018X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Sagunova, I. V. verfasserin aut Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation. Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213 Shevyakov, V. I. verfasserin aut Gavrilov, S. A. verfasserin aut Belov, A. N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 13 vom: Dez., Seite 1709-1713 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:13 month:12 pages:1709-1713 https://dx.doi.org/10.1134/S106378261013018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 13 12 1709-1713
spelling	10.1134/S106378261013018X doi (DE-627)SPR019721315 (SPR)S106378261013018X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Sagunova, I. V. verfasserin aut Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation. Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213 Shevyakov, V. I. verfasserin aut Gavrilov, S. A. verfasserin aut Belov, A. N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 13 vom: Dez., Seite 1709-1713 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:13 month:12 pages:1709-1713 https://dx.doi.org/10.1134/S106378261013018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 13 12 1709-1713
allfields_unstemmed	10.1134/S106378261013018X doi (DE-627)SPR019721315 (SPR)S106378261013018X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Sagunova, I. V. verfasserin aut Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation. Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213 Shevyakov, V. I. verfasserin aut Gavrilov, S. A. verfasserin aut Belov, A. N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 13 vom: Dez., Seite 1709-1713 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:13 month:12 pages:1709-1713 https://dx.doi.org/10.1134/S106378261013018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 13 12 1709-1713
allfieldsGer	10.1134/S106378261013018X doi (DE-627)SPR019721315 (SPR)S106378261013018X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Sagunova, I. V. verfasserin aut Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation. Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213 Shevyakov, V. I. verfasserin aut Gavrilov, S. A. verfasserin aut Belov, A. N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 13 vom: Dez., Seite 1709-1713 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:13 month:12 pages:1709-1713 https://dx.doi.org/10.1134/S106378261013018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 13 12 1709-1713
allfieldsSound	10.1134/S106378261013018X doi (DE-627)SPR019721315 (SPR)S106378261013018X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Sagunova, I. V. verfasserin aut Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation. Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213 Shevyakov, V. I. verfasserin aut Gavrilov, S. A. verfasserin aut Belov, A. N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 13 vom: Dez., Seite 1709-1713 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:13 month:12 pages:1709-1713 https://dx.doi.org/10.1134/S106378261013018X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 13 12 1709-1713
language	English
source	Enthalten in Semiconductors 44(2010), 13 vom: Dez., Seite 1709-1713 volume:44 year:2010 number:13 month:12 pages:1709-1713
sourceStr	Enthalten in Semiconductors 44(2010), 13 vom: Dez., Seite 1709-1713 volume:44 year:2010 number:13 month:12 pages:1709-1713
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Oxide Layer Metal Film Titanium Nitride Natural Oxide Layer Oxide Layer Thickness
dewey-raw	530
isfreeaccess_bool	false
container_title	Semiconductors
authorswithroles_txt_mv	Sagunova, I. V. @@aut@@ Shevyakov, V. I. @@aut@@ Gavrilov, S. A. @@aut@@ Belov, A. N. @@aut@@
publishDateDaySort_date	2010-12-01T00:00:00Z
hierarchy_top_id	269019103
dewey-sort	3530
id	SPR019721315
language_de	englisch
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author	Sagunova, I. V.
spellingShingle	Sagunova, I. V. ddc 530 bkl 53.00 bkl 33.00 misc Oxide Layer misc Metal Film misc Titanium Nitride misc Natural Oxide Layer misc Oxide Layer Thickness Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films
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topic_title	530 ASE 53.00 bkl 33.00 bkl Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films Oxide Layer (dpeaa)DE-He213 Metal Film (dpeaa)DE-He213 Titanium Nitride (dpeaa)DE-He213 Natural Oxide Layer (dpeaa)DE-He213 Oxide Layer Thickness (dpeaa)DE-He213
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title	Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films
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title_full	Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films
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title_sort	kinetics of local probe oxidation of ultrathin v, nb, ta, ti, tin, and w metal films
title_auth	Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films
abstract	Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.
abstractGer	Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.
abstract_unstemmed	Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. For the material that provides a high efficiency of formation of local insulator nanoregions, vanadium is chosen, since this metal exhibits the maximum rate of anodic probe oxidation.
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title_short	Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films
url	https://dx.doi.org/10.1134/S106378261013018X
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doi_str	10.1134/S106378261013018X
up_date	2024-07-04T02:41:47.434Z
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fullrecord_marcxml	<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR019721315</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111071452.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2010 xx \|\|\|\|\|o 00\| \|\|eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1134/S106378261013018X</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR019721315</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)S106378261013018X-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">530</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">53.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="084" ind1=" " ind2=" "><subfield code="a">33.00</subfield><subfield code="2">bkl</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Sagunova, I. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2010</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The specific features of the kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films are studied. It is established that the kinetics of the oxidation process depends on such properties of the material to be oxidized as the resistivity, the presence of a natural surface oxide film and its thickness, the relationship between the densities of the metal and oxide, and the electrochemical constant of the oxidation process. 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Kinetics of local probe oxidation of ultrathin V, Nb, Ta, Ti, TiN, and W metal films

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