Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide
Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Anisimova, N. I. [verfasserIn] Bordovsky, V. A. [verfasserIn] Grabko, G. I. [verfasserIn] Castro, R. A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2010 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 44(2010), 8 vom: Aug., Seite 1004-1007 |
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| Übergeordnetes Werk: |
volume:44 ; year:2010 ; number:8 ; month:08 ; pages:1004-1007 |
| Links: |
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| DOI / URN: |
10.1134/S1063782610080075 |
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| Katalog-ID: |
SPR019722990 |
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| 520 | |a Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. | ||
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| 700 | 1 | |a Bordovsky, V. A. |e verfasserin |4 aut | |
| 700 | 1 | |a Grabko, G. I. |e verfasserin |4 aut | |
| 700 | 1 | |a Castro, R. A. |e verfasserin |4 aut | |
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10.1134/S1063782610080075 doi (DE-627)SPR019722990 (SPR)S1063782610080075-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Anisimova, N. I. verfasserin aut Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 Bordovsky, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 8 vom: Aug., Seite 1004-1007 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:8 month:08 pages:1004-1007 https://dx.doi.org/10.1134/S1063782610080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 8 08 1004-1007 |
| spelling |
10.1134/S1063782610080075 doi (DE-627)SPR019722990 (SPR)S1063782610080075-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Anisimova, N. I. verfasserin aut Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 Bordovsky, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 8 vom: Aug., Seite 1004-1007 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:8 month:08 pages:1004-1007 https://dx.doi.org/10.1134/S1063782610080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 8 08 1004-1007 |
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10.1134/S1063782610080075 doi (DE-627)SPR019722990 (SPR)S1063782610080075-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Anisimova, N. I. verfasserin aut Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 Bordovsky, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 8 vom: Aug., Seite 1004-1007 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:8 month:08 pages:1004-1007 https://dx.doi.org/10.1134/S1063782610080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 8 08 1004-1007 |
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10.1134/S1063782610080075 doi (DE-627)SPR019722990 (SPR)S1063782610080075-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Anisimova, N. I. verfasserin aut Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 Bordovsky, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 8 vom: Aug., Seite 1004-1007 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:8 month:08 pages:1004-1007 https://dx.doi.org/10.1134/S1063782610080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 8 08 1004-1007 |
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10.1134/S1063782610080075 doi (DE-627)SPR019722990 (SPR)S1063782610080075-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Anisimova, N. I. verfasserin aut Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide 2010 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 Bordovsky, V. A. verfasserin aut Grabko, G. I. verfasserin aut Castro, R. A. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 44(2010), 8 vom: Aug., Seite 1004-1007 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:44 year:2010 number:8 month:08 pages:1004-1007 https://dx.doi.org/10.1134/S1063782610080075 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 44 2010 8 08 1004-1007 |
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Enthalten in Semiconductors 44(2010), 8 vom: Aug., Seite 1004-1007 volume:44 year:2010 number:8 month:08 pages:1004-1007 |
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Electric Field Strength Contact Region Charge Accumulation Deep Trap Level Glassy Semiconductor |
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Anisimova, N. I. @@aut@@ Bordovsky, V. A. @@aut@@ Grabko, G. I. @@aut@@ Castro, R. A. @@aut@@ |
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Anisimova, N. I. |
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Anisimova, N. I. ddc 530 bkl 53.00 bkl 33.00 misc Electric Field Strength misc Contact Region misc Charge Accumulation misc Deep Trap Level misc Glassy Semiconductor Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
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530 ASE 53.00 bkl 33.00 bkl Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide Electric Field Strength (dpeaa)DE-He213 Contact Region (dpeaa)DE-He213 Charge Accumulation (dpeaa)DE-He213 Deep Trap Level (dpeaa)DE-He213 Glassy Semiconductor (dpeaa)DE-He213 |
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ddc 530 bkl 53.00 bkl 33.00 misc Electric Field Strength misc Contact Region misc Charge Accumulation misc Deep Trap Level misc Glassy Semiconductor |
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ddc 530 bkl 53.00 bkl 33.00 misc Electric Field Strength misc Contact Region misc Charge Accumulation misc Deep Trap Level misc Glassy Semiconductor |
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ddc 530 bkl 53.00 bkl 33.00 misc Electric Field Strength misc Contact Region misc Charge Accumulation misc Deep Trap Level misc Glassy Semiconductor |
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Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
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Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
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Anisimova, N. I. |
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Anisimova, N. I. Bordovsky, V. A. Grabko, G. I. Castro, R. A. |
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features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
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Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
| abstract |
Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. |
| abstractGer |
Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. |
| abstract_unstemmed |
Abstract The influence of the amount of introduced bismuth impurity on the charge transport and accumulation in amorphous $ As_{2} %$ Se_{3} $ layers has been studied. A relation between the relaxation transport processes and the change in the internal structure of the material under study has been found. The physical parameters characterizing the electronic processes (contact capacitance, density of localized states responsible for the charge accumulation in the contact region, charge constant of the contact region, and charge-carrier mobility) have been determined in the arsenic triselenide layers. The mechanisms of the effects observed are discussed. |
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Features of the charge transfer in structures based on thin layers of bismuth-modified arsenic triselenide |
| url |
https://dx.doi.org/10.1134/S1063782610080075 |
| remote_bool |
true |
| author2 |
Bordovsky, V. A. Grabko, G. I. Castro, R. A. |
| author2Str |
Bordovsky, V. A. Grabko, G. I. Castro, R. A. |
| ppnlink |
269019103 |
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| doi_str |
10.1134/S1063782610080075 |
| up_date |
2024-07-04T02:42:08.730Z |
| _version_ |
1803614608406085632 |
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