Leakage currents in 4H-SiC JBS diodes
Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS str...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Ivanov, P. A. [verfasserIn] Grekhov, I. V. [verfasserIn] Potapov, A. S. [verfasserIn] Kon’kov, O. I. [verfasserIn] Il’inskaya, N. D. [verfasserIn] Samsonova, T. P. [verfasserIn] Korol’kov, O. [verfasserIn] Sleptsuk, N. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 46(2012), 3 vom: März, Seite 397-400 |
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| Übergeordnetes Werk: |
volume:46 ; year:2012 ; number:3 ; month:03 ; pages:397-400 |
| Links: |
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| DOI / URN: |
10.1134/S106378261203013X |
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| Katalog-ID: |
SPR019728484 |
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| 520 | |a Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). | ||
| 650 | 4 | |a Leakage Current |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Reverse Voltage |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Space Charge Limited Current |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spectroscopy Spectrum |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Grekhov, I. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Potapov, A. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Kon’kov, O. I. |e verfasserin |4 aut | |
| 700 | 1 | |a Il’inskaya, N. D. |e verfasserin |4 aut | |
| 700 | 1 | |a Samsonova, T. P. |e verfasserin |4 aut | |
| 700 | 1 | |a Korol’kov, O. |e verfasserin |4 aut | |
| 700 | 1 | |a Sleptsuk, N. |e verfasserin |4 aut | |
| 773 | 0 | 8 | |i Enthalten in |t Semiconductors |d Berlin : Springer Science + Business Media, 1997 |g 46(2012), 3 vom: März, Seite 397-400 |w (DE-627)269019103 |w (DE-600)1473824-7 |x 1090-6479 |7 nnns |
| 773 | 1 | 8 | |g volume:46 |g year:2012 |g number:3 |g month:03 |g pages:397-400 |
| 856 | 4 | 0 | |u https://dx.doi.org/10.1134/S106378261203013X |z lizenzpflichtig |3 Volltext |
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10.1134/S106378261203013X doi (DE-627)SPR019728484 (SPR)S106378261203013X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Ivanov, P. A. verfasserin aut Leakage currents in 4H-SiC JBS diodes 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Grekhov, I. V. verfasserin aut Potapov, A. S. verfasserin aut Kon’kov, O. I. verfasserin aut Il’inskaya, N. D. verfasserin aut Samsonova, T. P. verfasserin aut Korol’kov, O. verfasserin aut Sleptsuk, N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 3 vom: März, Seite 397-400 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:3 month:03 pages:397-400 https://dx.doi.org/10.1134/S106378261203013X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 3 03 397-400 |
| spelling |
10.1134/S106378261203013X doi (DE-627)SPR019728484 (SPR)S106378261203013X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Ivanov, P. A. verfasserin aut Leakage currents in 4H-SiC JBS diodes 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Grekhov, I. V. verfasserin aut Potapov, A. S. verfasserin aut Kon’kov, O. I. verfasserin aut Il’inskaya, N. D. verfasserin aut Samsonova, T. P. verfasserin aut Korol’kov, O. verfasserin aut Sleptsuk, N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 3 vom: März, Seite 397-400 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:3 month:03 pages:397-400 https://dx.doi.org/10.1134/S106378261203013X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 3 03 397-400 |
| allfields_unstemmed |
10.1134/S106378261203013X doi (DE-627)SPR019728484 (SPR)S106378261203013X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Ivanov, P. A. verfasserin aut Leakage currents in 4H-SiC JBS diodes 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Grekhov, I. V. verfasserin aut Potapov, A. S. verfasserin aut Kon’kov, O. I. verfasserin aut Il’inskaya, N. D. verfasserin aut Samsonova, T. P. verfasserin aut Korol’kov, O. verfasserin aut Sleptsuk, N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 3 vom: März, Seite 397-400 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:3 month:03 pages:397-400 https://dx.doi.org/10.1134/S106378261203013X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 3 03 397-400 |
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10.1134/S106378261203013X doi (DE-627)SPR019728484 (SPR)S106378261203013X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Ivanov, P. A. verfasserin aut Leakage currents in 4H-SiC JBS diodes 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Grekhov, I. V. verfasserin aut Potapov, A. S. verfasserin aut Kon’kov, O. I. verfasserin aut Il’inskaya, N. D. verfasserin aut Samsonova, T. P. verfasserin aut Korol’kov, O. verfasserin aut Sleptsuk, N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 3 vom: März, Seite 397-400 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:3 month:03 pages:397-400 https://dx.doi.org/10.1134/S106378261203013X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 3 03 397-400 |
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10.1134/S106378261203013X doi (DE-627)SPR019728484 (SPR)S106378261203013X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Ivanov, P. A. verfasserin aut Leakage currents in 4H-SiC JBS diodes 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 Grekhov, I. V. verfasserin aut Potapov, A. S. verfasserin aut Kon’kov, O. I. verfasserin aut Il’inskaya, N. D. verfasserin aut Samsonova, T. P. verfasserin aut Korol’kov, O. verfasserin aut Sleptsuk, N. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 3 vom: März, Seite 397-400 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:3 month:03 pages:397-400 https://dx.doi.org/10.1134/S106378261203013X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 3 03 397-400 |
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Enthalten in Semiconductors 46(2012), 3 vom: März, Seite 397-400 volume:46 year:2012 number:3 month:03 pages:397-400 |
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Leakage Current Deep Level Transient Spectroscopy Reverse Voltage Space Charge Limited Current Deep Level Transient Spectroscopy Spectrum |
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Ivanov, P. A. @@aut@@ Grekhov, I. V. @@aut@@ Potapov, A. S. @@aut@@ Kon’kov, O. I. @@aut@@ Il’inskaya, N. D. @@aut@@ Samsonova, T. P. @@aut@@ Korol’kov, O. @@aut@@ Sleptsuk, N. @@aut@@ |
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Ivanov, P. A. |
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Ivanov, P. A. ddc 530 bkl 53.00 bkl 33.00 misc Leakage Current misc Deep Level Transient Spectroscopy misc Reverse Voltage misc Space Charge Limited Current misc Deep Level Transient Spectroscopy Spectrum Leakage currents in 4H-SiC JBS diodes |
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530 ASE 53.00 bkl 33.00 bkl Leakage currents in 4H-SiC JBS diodes Leakage Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy (dpeaa)DE-He213 Reverse Voltage (dpeaa)DE-He213 Space Charge Limited Current (dpeaa)DE-He213 Deep Level Transient Spectroscopy Spectrum (dpeaa)DE-He213 |
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ddc 530 bkl 53.00 bkl 33.00 misc Leakage Current misc Deep Level Transient Spectroscopy misc Reverse Voltage misc Space Charge Limited Current misc Deep Level Transient Spectroscopy Spectrum |
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ddc 530 bkl 53.00 bkl 33.00 misc Leakage Current misc Deep Level Transient Spectroscopy misc Reverse Voltage misc Space Charge Limited Current misc Deep Level Transient Spectroscopy Spectrum |
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Leakage currents in 4H-SiC JBS diodes |
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Leakage currents in 4H-SiC JBS diodes |
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Ivanov, P. A. Grekhov, I. V. Potapov, A. S. Kon’kov, O. I. Il’inskaya, N. D. Samsonova, T. P. Korol’kov, O. Sleptsuk, N. |
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leakage currents in 4h-sic jbs diodes |
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Leakage currents in 4H-SiC JBS diodes |
| abstract |
Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). |
| abstractGer |
Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). |
| abstract_unstemmed |
Abstract Leakage currents in high-voltage 4H-SiC diodes, which have an integrated (p-n) Schottky structure (Junction Barrier Schottky, JBS), have been studied using commercial diodes and specially fabricated (based on a commercial epitaxial material) test Schottky diodes with and without the JBS structure. It is shown that (i) the main role in reverse charge transport is played by SiC crystal structure defects, most probably, by threading dislocations (density ∼$ 10^{4} $ $ cm^{−2} $), and (ii) the JBS structure, formed by the implantation of boron, partially suppresses the leakage currents (by up to a factor of 10 at optimal separation, 8 μm between local p-type regions). |
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| container_issue |
3 |
| title_short |
Leakage currents in 4H-SiC JBS diodes |
| url |
https://dx.doi.org/10.1134/S106378261203013X |
| remote_bool |
true |
| author2 |
Grekhov, I. V. Potapov, A. S. Kon’kov, O. I. Il’inskaya, N. D. Samsonova, T. P. Korol’kov, O. Sleptsuk, N. |
| author2Str |
Grekhov, I. V. Potapov, A. S. Kon’kov, O. I. Il’inskaya, N. D. Samsonova, T. P. Korol’kov, O. Sleptsuk, N. |
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269019103 |
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c |
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false |
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| doi_str |
10.1134/S106378261203013X |
| up_date |
2024-07-04T02:43:18.894Z |
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1803614681979420672 |
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| score |
7.3995523 |