Electronic properties and deep traps in electron-irradiated n-GaN
Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (co...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Brudnyi, V. N. [verfasserIn] Verevkin, S. S. [verfasserIn] Govorkov, A. V. [verfasserIn] Ermakov, V. S. [verfasserIn] Kolin, N. G. [verfasserIn] Korulin, A. V. [verfasserIn] Polyakov, A. Ya. [verfasserIn] Smirnov, N. B. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 46(2012), 4 vom: Apr., Seite 433-439 |
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| Übergeordnetes Werk: |
volume:46 ; year:2012 ; number:4 ; month:04 ; pages:433-439 |
| Links: |
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| DOI / URN: |
10.1134/S1063782612040045 |
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| Katalog-ID: |
SPR019728557 |
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| 245 | 1 | 0 | |a Electronic properties and deep traps in electron-irradiated n-GaN |
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| 520 | |a Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. | ||
| 650 | 4 | |a Electron Irradiation |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Level Transient Spec Troscopy |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Radiation Defect |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Deep Trap |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Hole Trap |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Verevkin, S. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Govorkov, A. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Ermakov, V. S. |e verfasserin |4 aut | |
| 700 | 1 | |a Kolin, N. G. |e verfasserin |4 aut | |
| 700 | 1 | |a Korulin, A. V. |e verfasserin |4 aut | |
| 700 | 1 | |a Polyakov, A. Ya. |e verfasserin |4 aut | |
| 700 | 1 | |a Smirnov, N. B. |e verfasserin |4 aut | |
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10.1134/S1063782612040045 doi (DE-627)SPR019728557 (SPR)S1063782612040045-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Brudnyi, V. N. verfasserin aut Electronic properties and deep traps in electron-irradiated n-GaN 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 Verevkin, S. S. verfasserin aut Govorkov, A. V. verfasserin aut Ermakov, V. S. verfasserin aut Kolin, N. G. verfasserin aut Korulin, A. V. verfasserin aut Polyakov, A. Ya. verfasserin aut Smirnov, N. B. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 4 vom: Apr., Seite 433-439 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:4 month:04 pages:433-439 https://dx.doi.org/10.1134/S1063782612040045 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 4 04 433-439 |
| spelling |
10.1134/S1063782612040045 doi (DE-627)SPR019728557 (SPR)S1063782612040045-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Brudnyi, V. N. verfasserin aut Electronic properties and deep traps in electron-irradiated n-GaN 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 Verevkin, S. S. verfasserin aut Govorkov, A. V. verfasserin aut Ermakov, V. S. verfasserin aut Kolin, N. G. verfasserin aut Korulin, A. V. verfasserin aut Polyakov, A. Ya. verfasserin aut Smirnov, N. B. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 4 vom: Apr., Seite 433-439 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:4 month:04 pages:433-439 https://dx.doi.org/10.1134/S1063782612040045 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 4 04 433-439 |
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10.1134/S1063782612040045 doi (DE-627)SPR019728557 (SPR)S1063782612040045-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Brudnyi, V. N. verfasserin aut Electronic properties and deep traps in electron-irradiated n-GaN 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 Verevkin, S. S. verfasserin aut Govorkov, A. V. verfasserin aut Ermakov, V. S. verfasserin aut Kolin, N. G. verfasserin aut Korulin, A. V. verfasserin aut Polyakov, A. Ya. verfasserin aut Smirnov, N. B. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 4 vom: Apr., Seite 433-439 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:4 month:04 pages:433-439 https://dx.doi.org/10.1134/S1063782612040045 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 4 04 433-439 |
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10.1134/S1063782612040045 doi (DE-627)SPR019728557 (SPR)S1063782612040045-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Brudnyi, V. N. verfasserin aut Electronic properties and deep traps in electron-irradiated n-GaN 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 Verevkin, S. S. verfasserin aut Govorkov, A. V. verfasserin aut Ermakov, V. S. verfasserin aut Kolin, N. G. verfasserin aut Korulin, A. V. verfasserin aut Polyakov, A. Ya. verfasserin aut Smirnov, N. B. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 4 vom: Apr., Seite 433-439 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:4 month:04 pages:433-439 https://dx.doi.org/10.1134/S1063782612040045 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 4 04 433-439 |
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10.1134/S1063782612040045 doi (DE-627)SPR019728557 (SPR)S1063782612040045-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Brudnyi, V. N. verfasserin aut Electronic properties and deep traps in electron-irradiated n-GaN 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 Verevkin, S. S. verfasserin aut Govorkov, A. V. verfasserin aut Ermakov, V. S. verfasserin aut Kolin, N. G. verfasserin aut Korulin, A. V. verfasserin aut Polyakov, A. Ya. verfasserin aut Smirnov, N. B. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 46(2012), 4 vom: Apr., Seite 433-439 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:46 year:2012 number:4 month:04 pages:433-439 https://dx.doi.org/10.1134/S1063782612040045 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 46 2012 4 04 433-439 |
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Enthalten in Semiconductors 46(2012), 4 vom: Apr., Seite 433-439 volume:46 year:2012 number:4 month:04 pages:433-439 |
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Brudnyi, V. N. @@aut@@ Verevkin, S. S. @@aut@@ Govorkov, A. V. @@aut@@ Ermakov, V. S. @@aut@@ Kolin, N. G. @@aut@@ Korulin, A. V. @@aut@@ Polyakov, A. Ya. @@aut@@ Smirnov, N. B. @@aut@@ |
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N.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electronic properties and deep traps in electron-irradiated n-GaN</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. 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S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Govorkov, A. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ermakov, V. S.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kolin, N. G.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Korulin, A. V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Polyakov, A. 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Brudnyi, V. N. |
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Brudnyi, V. N. ddc 530 bkl 53.00 bkl 33.00 misc Electron Irradiation misc Deep Level Transient Spec Troscopy misc Radiation Defect misc Deep Trap misc Hole Trap Electronic properties and deep traps in electron-irradiated n-GaN |
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530 ASE 53.00 bkl 33.00 bkl Electronic properties and deep traps in electron-irradiated n-GaN Electron Irradiation (dpeaa)DE-He213 Deep Level Transient Spec Troscopy (dpeaa)DE-He213 Radiation Defect (dpeaa)DE-He213 Deep Trap (dpeaa)DE-He213 Hole Trap (dpeaa)DE-He213 |
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ddc 530 bkl 53.00 bkl 33.00 misc Electron Irradiation misc Deep Level Transient Spec Troscopy misc Radiation Defect misc Deep Trap misc Hole Trap |
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Brudnyi, V. N. Verevkin, S. S. Govorkov, A. V. Ermakov, V. S. Kolin, N. G. Korulin, A. V. Polyakov, A. Ya. Smirnov, N. B. |
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Elektronische Aufsätze |
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Brudnyi, V. N. |
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verfasserin |
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electronic properties and deep traps in electron-irradiated n-gan |
| title_auth |
Electronic properties and deep traps in electron-irradiated n-GaN |
| abstract |
Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. |
| abstractGer |
Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. |
| abstract_unstemmed |
Abstract The study is concerned with the effect of electron irradiation (with the energies E = 7 and 10 MeV and doses D = $ 10^{16} $−$ 10^{18} $ $ cm^{−2} $) and subsequent heat treatments in the temperature range 100–1000°C on the electrical properties and the spectrum of deep traps of undoped (concentration of electrons n = 1 × $ 10^{14} $−1 × $ 10^{16} $ $ cm^{−3} $), moderately Si-doped (n = (1.2−2) × $ 10^{17} $ $ cm^{−3} $), and heavily Si-doped (n = (2−3.5) × $ 10^{18} $ $ cm^{−3} $) epitaxial n-GaN layers grown on $ Al_{2} %$ O_{3} $ substrates by metal-organic chemical vapor deposition. It is found that, on electron irradiation, the resistivity of n-GaN increases, this is due to a shift of the Fermi level to the limiting position close to Ec −0.91 eV. The spectrum of deep traps is studied for the initial and electron-irradiated n-GaN. It is shown that the initial properties of the irradiated material are restored in the temperature range 100–1000°C, with the main stage of the annealing of radiation defects at about 400°C. |
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Electronic properties and deep traps in electron-irradiated n-GaN |
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Verevkin, S. S. Govorkov, A. V. Ermakov, V. S. Kolin, N. G. Korulin, A. V. Polyakov, A. Ya Smirnov, N. B. |
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|
| score |
7.399585 |