Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials

Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducin...
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Autor*in:	Yfanti-Katti, M. [verfasserIn] Prokopos-Chouliaras, F. [verfasserIn] Milonakou-Koufoudaki, K. [verfasserIn] Mitzithra, C. [verfasserIn] Kordatos, K. [verfasserIn] Hamilakis, S. [verfasserIn] Kollia, C. [verfasserIn] Loizos, Z. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2017

Übergeordnetes Werk:	Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 51(2017), 12 vom: Dez., Seite 1592-1596
Übergeordnetes Werk:	volume:51 ; year:2017 ; number:12 ; month:12 ; pages:1592-1596

Links:	Volltext

DOI / URN:	10.1134/S106378261712020X

Katalog-ID:	SPR019744773

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520			\|a Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths.
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matchkey_str	article:10906479:2017----::rdcinnietfctoohglpooodciedeaehbiogncn
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publishDate	2017
allfields	10.1134/S106378261712020X doi (DE-627)SPR019744773 (SPR)S106378261712020X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Yfanti-Katti, M. verfasserin aut Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths. Prokopos-Chouliaras, F. verfasserin aut Milonakou-Koufoudaki, K. verfasserin aut Mitzithra, C. verfasserin aut Kordatos, K. verfasserin aut Hamilakis, S. verfasserin aut Kollia, C. verfasserin aut Loizos, Z. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 51(2017), 12 vom: Dez., Seite 1592-1596 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:51 year:2017 number:12 month:12 pages:1592-1596 https://dx.doi.org/10.1134/S106378261712020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 51 2017 12 12 1592-1596
spelling	10.1134/S106378261712020X doi (DE-627)SPR019744773 (SPR)S106378261712020X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Yfanti-Katti, M. verfasserin aut Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths. Prokopos-Chouliaras, F. verfasserin aut Milonakou-Koufoudaki, K. verfasserin aut Mitzithra, C. verfasserin aut Kordatos, K. verfasserin aut Hamilakis, S. verfasserin aut Kollia, C. verfasserin aut Loizos, Z. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 51(2017), 12 vom: Dez., Seite 1592-1596 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:51 year:2017 number:12 month:12 pages:1592-1596 https://dx.doi.org/10.1134/S106378261712020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 51 2017 12 12 1592-1596
allfields_unstemmed	10.1134/S106378261712020X doi (DE-627)SPR019744773 (SPR)S106378261712020X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Yfanti-Katti, M. verfasserin aut Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths. Prokopos-Chouliaras, F. verfasserin aut Milonakou-Koufoudaki, K. verfasserin aut Mitzithra, C. verfasserin aut Kordatos, K. verfasserin aut Hamilakis, S. verfasserin aut Kollia, C. verfasserin aut Loizos, Z. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 51(2017), 12 vom: Dez., Seite 1592-1596 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:51 year:2017 number:12 month:12 pages:1592-1596 https://dx.doi.org/10.1134/S106378261712020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 51 2017 12 12 1592-1596
allfieldsGer	10.1134/S106378261712020X doi (DE-627)SPR019744773 (SPR)S106378261712020X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Yfanti-Katti, M. verfasserin aut Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths. Prokopos-Chouliaras, F. verfasserin aut Milonakou-Koufoudaki, K. verfasserin aut Mitzithra, C. verfasserin aut Kordatos, K. verfasserin aut Hamilakis, S. verfasserin aut Kollia, C. verfasserin aut Loizos, Z. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 51(2017), 12 vom: Dez., Seite 1592-1596 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:51 year:2017 number:12 month:12 pages:1592-1596 https://dx.doi.org/10.1134/S106378261712020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 51 2017 12 12 1592-1596
allfieldsSound	10.1134/S106378261712020X doi (DE-627)SPR019744773 (SPR)S106378261712020X-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Yfanti-Katti, M. verfasserin aut Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials 2017 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths. Prokopos-Chouliaras, F. verfasserin aut Milonakou-Koufoudaki, K. verfasserin aut Mitzithra, C. verfasserin aut Kordatos, K. verfasserin aut Hamilakis, S. verfasserin aut Kollia, C. verfasserin aut Loizos, Z. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 51(2017), 12 vom: Dez., Seite 1592-1596 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:51 year:2017 number:12 month:12 pages:1592-1596 https://dx.doi.org/10.1134/S106378261712020X lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 51 2017 12 12 1592-1596
language	English
source	Enthalten in Semiconductors 51(2017), 12 vom: Dez., Seite 1592-1596 volume:51 year:2017 number:12 month:12 pages:1592-1596
sourceStr	Enthalten in Semiconductors 51(2017), 12 vom: Dez., Seite 1592-1596 volume:51 year:2017 number:12 month:12 pages:1592-1596
format_phy_str_mv	Article
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container_title	Semiconductors
authorswithroles_txt_mv	Yfanti-Katti, M. @@aut@@ Prokopos-Chouliaras, F. @@aut@@ Milonakou-Koufoudaki, K. @@aut@@ Mitzithra, C. @@aut@@ Kordatos, K. @@aut@@ Hamilakis, S. @@aut@@ Kollia, C. @@aut@@ Loizos, Z. @@aut@@
publishDateDaySort_date	2017-12-01T00:00:00Z
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author	Yfanti-Katti, M.
spellingShingle	Yfanti-Katti, M. ddc 530 bkl 53.00 bkl 33.00 Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
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topic_title	530 ASE 53.00 bkl 33.00 bkl Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
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title	Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
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title_full	Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
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author_browse	Yfanti-Katti, M. Prokopos-Chouliaras, F. Milonakou-Koufoudaki, K. Mitzithra, C. Kordatos, K. Hamilakis, S. Kollia, C. Loizos, Z.
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title_sort	production and identification of highly photoconductive cdse-based hybrid organic-inorganic multi-layer materials
title_auth	Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
abstract	Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths.
abstractGer	Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths.
abstract_unstemmed	Abstract Highly photoconductive thin multi-layers of new hybrid organic-inorganic semiconductors have been developed. They result by the combination of an inorganic semiconductor with ferrocene, a commercially available compound, applying the electrodeposition and spin coating techniques, introducing sodium oxalate as an additive in the electrolytic bath. The organic layer of the hybrid system is enveloped between two inorganic layers in a sandwich-like structure. The full characterization of the final products by XRD, SEM-EDAX, band gap and photo electro chemical cell (PEC) measurements confirmed the development of the hybrid semiconducting system. The outer electrodeposited CdSe layer of the sandwich-like materials exhibits a definite hexagonal structure, whereas, as derived from the XRD and band gap data, the development of a new semiconducting compound has been confirmed. Thus, due to a synergic action, the three-layer materials present a remarkably improved photoresponse compared to that of the pure cubic CdSe electrodeposited in the presence of the oxalate additive as well as the three-layer hybrid CdSe-based products developed in our previous work in additive-free electrolytic baths.
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title_short	Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials
url	https://dx.doi.org/10.1134/S106378261712020X
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author2	Prokopos-Chouliaras, F. Milonakou-Koufoudaki, K. Mitzithra, C. Kordatos, K. Hamilakis, S. Kollia, C. Loizos, Z.
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up_date	2024-07-04T02:46:49.164Z
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Production and identification of highly photoconductive CdSe-based hybrid organic-inorganic multi-layer materials

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