Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures

Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resist...
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Autor*in:	Kalygina, V. M. [verfasserIn] Lygdenova, T. Z. [verfasserIn] Petrova, Yu. S. [verfasserIn] Chernikov, E. V. [verfasserIn]

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2019

Übergeordnetes Werk:	Enthalten in: Semiconductors - Berlin : Springer Science + Business Media, 1997, 53(2019), 4 vom: Apr., Seite 452-457
Übergeordnetes Werk:	volume:53 ; year:2019 ; number:4 ; month:04 ; pages:452-457

Links:	Volltext

DOI / URN:	10.1134/S1063782619040122

Katalog-ID:	SPR019754760

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520			\|a Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode.
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Indexfelder

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matchkey_str	article:10906479:2019----::nlecoteusrtmtraoterprisfaluoieimad
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publishDate	2019
allfields	10.1134/S1063782619040122 doi (DE-627)SPR019754760 (SPR)S1063782619040122-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Kalygina, V. M. verfasserin aut Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode. Lygdenova, T. Z. verfasserin aut Petrova, Yu. S. verfasserin aut Chernikov, E. V. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 53(2019), 4 vom: Apr., Seite 452-457 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:53 year:2019 number:4 month:04 pages:452-457 https://dx.doi.org/10.1134/S1063782619040122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 53 2019 4 04 452-457
spelling	10.1134/S1063782619040122 doi (DE-627)SPR019754760 (SPR)S1063782619040122-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Kalygina, V. M. verfasserin aut Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode. Lygdenova, T. Z. verfasserin aut Petrova, Yu. S. verfasserin aut Chernikov, E. V. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 53(2019), 4 vom: Apr., Seite 452-457 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:53 year:2019 number:4 month:04 pages:452-457 https://dx.doi.org/10.1134/S1063782619040122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 53 2019 4 04 452-457
allfields_unstemmed	10.1134/S1063782619040122 doi (DE-627)SPR019754760 (SPR)S1063782619040122-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Kalygina, V. M. verfasserin aut Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode. Lygdenova, T. Z. verfasserin aut Petrova, Yu. S. verfasserin aut Chernikov, E. V. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 53(2019), 4 vom: Apr., Seite 452-457 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:53 year:2019 number:4 month:04 pages:452-457 https://dx.doi.org/10.1134/S1063782619040122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 53 2019 4 04 452-457
allfieldsGer	10.1134/S1063782619040122 doi (DE-627)SPR019754760 (SPR)S1063782619040122-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Kalygina, V. M. verfasserin aut Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode. Lygdenova, T. Z. verfasserin aut Petrova, Yu. S. verfasserin aut Chernikov, E. V. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 53(2019), 4 vom: Apr., Seite 452-457 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:53 year:2019 number:4 month:04 pages:452-457 https://dx.doi.org/10.1134/S1063782619040122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 53 2019 4 04 452-457
allfieldsSound	10.1134/S1063782619040122 doi (DE-627)SPR019754760 (SPR)S1063782619040122-e DE-627 ger DE-627 rakwb eng 530 ASE 53.00 bkl 33.00 bkl Kalygina, V. M. verfasserin aut Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures 2019 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode. Lygdenova, T. Z. verfasserin aut Petrova, Yu. S. verfasserin aut Chernikov, E. V. verfasserin aut Enthalten in Semiconductors Berlin : Springer Science + Business Media, 1997 53(2019), 4 vom: Apr., Seite 452-457 (DE-627)269019103 (DE-600)1473824-7 1090-6479 nnns volume:53 year:2019 number:4 month:04 pages:452-457 https://dx.doi.org/10.1134/S1063782619040122 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 53.00 ASE 33.00 ASE AR 53 2019 4 04 452-457
language	English
source	Enthalten in Semiconductors 53(2019), 4 vom: Apr., Seite 452-457 volume:53 year:2019 number:4 month:04 pages:452-457
sourceStr	Enthalten in Semiconductors 53(2019), 4 vom: Apr., Seite 452-457 volume:53 year:2019 number:4 month:04 pages:452-457
format_phy_str_mv	Article
institution	findex.gbv.de
dewey-raw	530
isfreeaccess_bool	false
container_title	Semiconductors
authorswithroles_txt_mv	Kalygina, V. M. @@aut@@ Lygdenova, T. Z. @@aut@@ Petrova, Yu. S. @@aut@@ Chernikov, E. V. @@aut@@
publishDateDaySort_date	2019-04-01T00:00:00Z
hierarchy_top_id	269019103
dewey-sort	3530
id	SPR019754760
language_de	englisch
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author	Kalygina, V. M.
spellingShingle	Kalygina, V. M. ddc 530 bkl 53.00 bkl 33.00 Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
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topic_title	530 ASE 53.00 bkl 33.00 bkl Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
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title	Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
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title_full	Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
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author_browse	Kalygina, V. M. Lygdenova, T. Z. Petrova, Yu. S. Chernikov, E. V.
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title_sort	influence of the substrate material on the properties of gallium-oxide films and gallium-oxide-based structures
title_auth	Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
abstract	Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode.
abstractGer	Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode.
abstract_unstemmed	Abstract The influence of the substrate material on the properties of gallium-oxide films formed on sapphire and n(p)-GaAs semiconductor wafers by high-frequency magnetron-assisted deposition is studied. The films grown on insulating substrates, as a rule, are of the n type and possess a high resistance. The increase in their conductivity with temperature is defined by the ionization of deep donor centers, whose energy is (0.98 ± 0.02) eV below the bottom of the conduction band. Gallium-oxide films grown on single-crystal GaAs layers are of the n type as well, irrespective of the conductivity type of the semiconductor substrates. However, the conductance of such films is noticeably higher, which is attributed to the possible diffusion of uncontrollable impurities from the semiconductor into the growing gallium-oxide layer. The electrical characteristics of $ Ga_{2} %$ O_{3} $– semiconductor structures are defined to a larger extent by the properties of the oxide–semiconductor interface than by the properties of the contacting materials. In the reverse branch of the current–voltage characteristics of $ Ga_{2} %$ O_{3} $/p-GaAs samples before annealing, a region of N-type negative resistance is observed. After annealing of the gallium-oxide films at 900°C (30 min), the conductance of the structures corresponds to the current–voltage characteristic of a backward diode.
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title_short	Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures
url	https://dx.doi.org/10.1134/S1063782619040122
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Influence of the Substrate Material on the Properties of Gallium-Oxide Films and Gallium-Oxide-Based Structures

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