Ultraviolet exposure enhanced silicon direct bonding
Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the s...
Ausführliche Beschreibung
Autor*in: |
Liao, Guanglan [verfasserIn] Zhang, Xuekun [verfasserIn] Lin, Xiaohui [verfasserIn] Ma, Canghai [verfasserIn] Nie, Lei [verfasserIn] Shi, Tielin [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2009 |
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Schlagwörter: |
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Übergeordnetes Werk: |
Enthalten in: Frontiers of mechanical engineering in China - Berlin : Heidelberg : Springer, 2006, 5(2009), 1 vom: 10. Nov., Seite 87-92 |
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Übergeordnetes Werk: |
volume:5 ; year:2009 ; number:1 ; day:10 ; month:11 ; pages:87-92 |
Links: |
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DOI / URN: |
10.1007/s11465-009-0078-x |
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Katalog-ID: |
SPR019866593 |
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520 | |a Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. | ||
650 | 4 | |a ultraviolet (UV) exposure |7 (dpeaa)DE-He213 | |
650 | 4 | |a silicon direct bonding |7 (dpeaa)DE-He213 | |
650 | 4 | |a bonding strength |7 (dpeaa)DE-He213 | |
650 | 4 | |a reliability |7 (dpeaa)DE-He213 | |
700 | 1 | |a Zhang, Xuekun |e verfasserin |4 aut | |
700 | 1 | |a Lin, Xiaohui |e verfasserin |4 aut | |
700 | 1 | |a Ma, Canghai |e verfasserin |4 aut | |
700 | 1 | |a Nie, Lei |e verfasserin |4 aut | |
700 | 1 | |a Shi, Tielin |e verfasserin |4 aut | |
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10.1007/s11465-009-0078-x doi (DE-627)SPR019866593 (SPR)s11465-009-0078-x-e DE-627 ger DE-627 rakwb eng 620 ASE Liao, Guanglan verfasserin aut Ultraviolet exposure enhanced silicon direct bonding 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 Zhang, Xuekun verfasserin aut Lin, Xiaohui verfasserin aut Ma, Canghai verfasserin aut Nie, Lei verfasserin aut Shi, Tielin verfasserin aut Enthalten in Frontiers of mechanical engineering in China Berlin : Heidelberg : Springer, 2006 5(2009), 1 vom: 10. Nov., Seite 87-92 (DE-627)510464319 (DE-600)2230609-2 1673-3592 nnns volume:5 year:2009 number:1 day:10 month:11 pages:87-92 https://dx.doi.org/10.1007/s11465-009-0078-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 5 2009 1 10 11 87-92 |
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10.1007/s11465-009-0078-x doi (DE-627)SPR019866593 (SPR)s11465-009-0078-x-e DE-627 ger DE-627 rakwb eng 620 ASE Liao, Guanglan verfasserin aut Ultraviolet exposure enhanced silicon direct bonding 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 Zhang, Xuekun verfasserin aut Lin, Xiaohui verfasserin aut Ma, Canghai verfasserin aut Nie, Lei verfasserin aut Shi, Tielin verfasserin aut Enthalten in Frontiers of mechanical engineering in China Berlin : Heidelberg : Springer, 2006 5(2009), 1 vom: 10. Nov., Seite 87-92 (DE-627)510464319 (DE-600)2230609-2 1673-3592 nnns volume:5 year:2009 number:1 day:10 month:11 pages:87-92 https://dx.doi.org/10.1007/s11465-009-0078-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 5 2009 1 10 11 87-92 |
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10.1007/s11465-009-0078-x doi (DE-627)SPR019866593 (SPR)s11465-009-0078-x-e DE-627 ger DE-627 rakwb eng 620 ASE Liao, Guanglan verfasserin aut Ultraviolet exposure enhanced silicon direct bonding 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 Zhang, Xuekun verfasserin aut Lin, Xiaohui verfasserin aut Ma, Canghai verfasserin aut Nie, Lei verfasserin aut Shi, Tielin verfasserin aut Enthalten in Frontiers of mechanical engineering in China Berlin : Heidelberg : Springer, 2006 5(2009), 1 vom: 10. Nov., Seite 87-92 (DE-627)510464319 (DE-600)2230609-2 1673-3592 nnns volume:5 year:2009 number:1 day:10 month:11 pages:87-92 https://dx.doi.org/10.1007/s11465-009-0078-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 5 2009 1 10 11 87-92 |
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10.1007/s11465-009-0078-x doi (DE-627)SPR019866593 (SPR)s11465-009-0078-x-e DE-627 ger DE-627 rakwb eng 620 ASE Liao, Guanglan verfasserin aut Ultraviolet exposure enhanced silicon direct bonding 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 Zhang, Xuekun verfasserin aut Lin, Xiaohui verfasserin aut Ma, Canghai verfasserin aut Nie, Lei verfasserin aut Shi, Tielin verfasserin aut Enthalten in Frontiers of mechanical engineering in China Berlin : Heidelberg : Springer, 2006 5(2009), 1 vom: 10. Nov., Seite 87-92 (DE-627)510464319 (DE-600)2230609-2 1673-3592 nnns volume:5 year:2009 number:1 day:10 month:11 pages:87-92 https://dx.doi.org/10.1007/s11465-009-0078-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 5 2009 1 10 11 87-92 |
allfieldsSound |
10.1007/s11465-009-0078-x doi (DE-627)SPR019866593 (SPR)s11465-009-0078-x-e DE-627 ger DE-627 rakwb eng 620 ASE Liao, Guanglan verfasserin aut Ultraviolet exposure enhanced silicon direct bonding 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 Zhang, Xuekun verfasserin aut Lin, Xiaohui verfasserin aut Ma, Canghai verfasserin aut Nie, Lei verfasserin aut Shi, Tielin verfasserin aut Enthalten in Frontiers of mechanical engineering in China Berlin : Heidelberg : Springer, 2006 5(2009), 1 vom: 10. Nov., Seite 87-92 (DE-627)510464319 (DE-600)2230609-2 1673-3592 nnns volume:5 year:2009 number:1 day:10 month:11 pages:87-92 https://dx.doi.org/10.1007/s11465-009-0078-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_266 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 5 2009 1 10 11 87-92 |
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Liao, Guanglan @@aut@@ Zhang, Xuekun @@aut@@ Lin, Xiaohui @@aut@@ Ma, Canghai @@aut@@ Nie, Lei @@aut@@ Shi, Tielin @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR019866593</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20220111072018.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2009 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11465-009-0078-x</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR019866593</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11465-009-0078-x-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="082" ind1="0" ind2="4"><subfield code="a">620</subfield><subfield code="q">ASE</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Liao, Guanglan</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Ultraviolet exposure enhanced silicon direct bonding</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2009</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. 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Liao, Guanglan |
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Liao, Guanglan ddc 620 misc ultraviolet (UV) exposure misc silicon direct bonding misc bonding strength misc reliability Ultraviolet exposure enhanced silicon direct bonding |
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620 ASE Ultraviolet exposure enhanced silicon direct bonding ultraviolet (UV) exposure (dpeaa)DE-He213 silicon direct bonding (dpeaa)DE-He213 bonding strength (dpeaa)DE-He213 reliability (dpeaa)DE-He213 |
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ddc 620 misc ultraviolet (UV) exposure misc silicon direct bonding misc bonding strength misc reliability |
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Ultraviolet exposure enhanced silicon direct bonding |
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ultraviolet exposure enhanced silicon direct bonding |
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Ultraviolet exposure enhanced silicon direct bonding |
abstract |
Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. |
abstractGer |
Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. |
abstract_unstemmed |
Abstract Ultraviolet (UV) exposure, as an additional technique following the traditional wet chemical activation processes, is applied to enhance hydrophilic silicon direct bonding. The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. It follows from the results that the bonding strength of silicon wafer pairs with UV exposure decreases after the environmental tests, whereas the residual strength is still higher than that without UV exposure, and the variation trends of bonding strength vs. UV exposure time, annealing temperature and annealing time remain unchanged. Therefore, following the traditional wet chemical activation processes, appropriate UV exposure (about three minutes in this study) is effective and promising to enhance silicon direct bonding. |
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title_short |
Ultraviolet exposure enhanced silicon direct bonding |
url |
https://dx.doi.org/10.1007/s11465-009-0078-x |
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author2 |
Zhang, Xuekun Lin, Xiaohui Ma, Canghai Nie, Lei Shi, Tielin |
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Zhang, Xuekun Lin, Xiaohui Ma, Canghai Nie, Lei Shi, Tielin |
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510464319 |
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doi_str |
10.1007/s11465-009-0078-x |
up_date |
2024-07-04T03:10:02.973Z |
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The effects of UV exposure on silicon wafers’ nano-topography and bonding strength are studied. It is found that the surface roughness of silicon wafers initially decreases and then increases with UV exposure time, and the bonding strength increases and then decreases accordingly. The correlations of annealing temperature and annealing time vs. bonding strength are experimentally explored. Results indicate that the bonding strength increases sharply then gently with increasing annealing temperature and annealing time using UV exposure. Besides, the reliability of silicon direct bonding with UV exposure enhancement after the high/low temperature cycle test, constant temperature and humidity test, vibration test and shock test is investigated. 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|
score |
7.399617 |