Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices
Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular pla...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Wu, Bo [verfasserIn] Liu, Xinfeng [verfasserIn] Oo, Than Zaw [verfasserIn] Xing, Guichuan [verfasserIn] Mathews, Nripan [verfasserIn] Sum, Tze Chien [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Übergeordnetes Werk: |
Enthalten in: Plasmonics - New York, NY [u.a.] : Springer, 2006, 7(2012), 4 vom: 29. März, Seite 677-684 |
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| Übergeordnetes Werk: |
volume:7 ; year:2012 ; number:4 ; day:29 ; month:03 ; pages:677-684 |
| Links: |
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| DOI / URN: |
10.1007/s11468-012-9358-0 |
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| Katalog-ID: |
SPR019887906 |
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| 520 | |a Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. | ||
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| 650 | 4 | |a Plasmonic cavity resonance |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Enhancement |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Ultrathin |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Cost-effective |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Liu, Xinfeng |e verfasserin |4 aut | |
| 700 | 1 | |a Oo, Than Zaw |e verfasserin |4 aut | |
| 700 | 1 | |a Xing, Guichuan |e verfasserin |4 aut | |
| 700 | 1 | |a Mathews, Nripan |e verfasserin |4 aut | |
| 700 | 1 | |a Sum, Tze Chien |e verfasserin |4 aut | |
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10.1007/s11468-012-9358-0 doi (DE-627)SPR019887906 (SPR)s11468-012-9358-0-e DE-627 ger DE-627 rakwb eng 540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Wu, Bo verfasserin aut Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 Liu, Xinfeng verfasserin aut Oo, Than Zaw verfasserin aut Xing, Guichuan verfasserin aut Mathews, Nripan verfasserin aut Sum, Tze Chien verfasserin aut Enthalten in Plasmonics New York, NY [u.a.] : Springer, 2006 7(2012), 4 vom: 29. März, Seite 677-684 (DE-627)512879648 (DE-600)2237548-X 1557-1963 nnns volume:7 year:2012 number:4 day:29 month:03 pages:677-684 https://dx.doi.org/10.1007/s11468-012-9358-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 44.09 ASE 51.45 ASE AR 7 2012 4 29 03 677-684 |
| spelling |
10.1007/s11468-012-9358-0 doi (DE-627)SPR019887906 (SPR)s11468-012-9358-0-e DE-627 ger DE-627 rakwb eng 540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Wu, Bo verfasserin aut Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 Liu, Xinfeng verfasserin aut Oo, Than Zaw verfasserin aut Xing, Guichuan verfasserin aut Mathews, Nripan verfasserin aut Sum, Tze Chien verfasserin aut Enthalten in Plasmonics New York, NY [u.a.] : Springer, 2006 7(2012), 4 vom: 29. März, Seite 677-684 (DE-627)512879648 (DE-600)2237548-X 1557-1963 nnns volume:7 year:2012 number:4 day:29 month:03 pages:677-684 https://dx.doi.org/10.1007/s11468-012-9358-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 44.09 ASE 51.45 ASE AR 7 2012 4 29 03 677-684 |
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10.1007/s11468-012-9358-0 doi (DE-627)SPR019887906 (SPR)s11468-012-9358-0-e DE-627 ger DE-627 rakwb eng 540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Wu, Bo verfasserin aut Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 Liu, Xinfeng verfasserin aut Oo, Than Zaw verfasserin aut Xing, Guichuan verfasserin aut Mathews, Nripan verfasserin aut Sum, Tze Chien verfasserin aut Enthalten in Plasmonics New York, NY [u.a.] : Springer, 2006 7(2012), 4 vom: 29. März, Seite 677-684 (DE-627)512879648 (DE-600)2237548-X 1557-1963 nnns volume:7 year:2012 number:4 day:29 month:03 pages:677-684 https://dx.doi.org/10.1007/s11468-012-9358-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 44.09 ASE 51.45 ASE AR 7 2012 4 29 03 677-684 |
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10.1007/s11468-012-9358-0 doi (DE-627)SPR019887906 (SPR)s11468-012-9358-0-e DE-627 ger DE-627 rakwb eng 540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Wu, Bo verfasserin aut Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 Liu, Xinfeng verfasserin aut Oo, Than Zaw verfasserin aut Xing, Guichuan verfasserin aut Mathews, Nripan verfasserin aut Sum, Tze Chien verfasserin aut Enthalten in Plasmonics New York, NY [u.a.] : Springer, 2006 7(2012), 4 vom: 29. März, Seite 677-684 (DE-627)512879648 (DE-600)2237548-X 1557-1963 nnns volume:7 year:2012 number:4 day:29 month:03 pages:677-684 https://dx.doi.org/10.1007/s11468-012-9358-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 44.09 ASE 51.45 ASE AR 7 2012 4 29 03 677-684 |
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10.1007/s11468-012-9358-0 doi (DE-627)SPR019887906 (SPR)s11468-012-9358-0-e DE-627 ger DE-627 rakwb eng 540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Wu, Bo verfasserin aut Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 Liu, Xinfeng verfasserin aut Oo, Than Zaw verfasserin aut Xing, Guichuan verfasserin aut Mathews, Nripan verfasserin aut Sum, Tze Chien verfasserin aut Enthalten in Plasmonics New York, NY [u.a.] : Springer, 2006 7(2012), 4 vom: 29. März, Seite 677-684 (DE-627)512879648 (DE-600)2237548-X 1557-1963 nnns volume:7 year:2012 number:4 day:29 month:03 pages:677-684 https://dx.doi.org/10.1007/s11468-012-9358-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 33.68 ASE 44.09 ASE 51.45 ASE AR 7 2012 4 29 03 677-684 |
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Enthalten in Plasmonics 7(2012), 4 vom: 29. März, Seite 677-684 volume:7 year:2012 number:4 day:29 month:03 pages:677-684 |
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Organic photovoltaic device Aluminum Plasmonic cavity resonance Enhancement Ultrathin Cost-effective |
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Wu, Bo @@aut@@ Liu, Xinfeng @@aut@@ Oo, Than Zaw @@aut@@ Xing, Guichuan @@aut@@ Mathews, Nripan @@aut@@ Sum, Tze Chien @@aut@@ |
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This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. 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Wu, Bo |
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Wu, Bo ddc 540 bkl 33.68 bkl 44.09 bkl 51.45 misc Organic photovoltaic device misc Aluminum misc Plasmonic cavity resonance misc Enhancement misc Ultrathin misc Cost-effective Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices |
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540 ASE 33.68 bkl 44.09 bkl 51.45 bkl Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices Organic photovoltaic device (dpeaa)DE-He213 Aluminum (dpeaa)DE-He213 Plasmonic cavity resonance (dpeaa)DE-He213 Enhancement (dpeaa)DE-He213 Ultrathin (dpeaa)DE-He213 Cost-effective (dpeaa)DE-He213 |
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ddc 540 bkl 33.68 bkl 44.09 bkl 51.45 misc Organic photovoltaic device misc Aluminum misc Plasmonic cavity resonance misc Enhancement misc Ultrathin misc Cost-effective |
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ddc 540 bkl 33.68 bkl 44.09 bkl 51.45 misc Organic photovoltaic device misc Aluminum misc Plasmonic cavity resonance misc Enhancement misc Ultrathin misc Cost-effective |
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resonant aluminum nanodisk array for enhanced tunable broadband light trapping in ultrathin bulk heterojunction organic photovoltaic devices |
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Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices |
| abstract |
Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. |
| abstractGer |
Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. |
| abstract_unstemmed |
Abstract A cost-effective approach to enhancing broadband light trapping in ultrathin bulk heterojunction organic photovoltaic (OPV) devices is proposed. This is achieved by simply inserting an array of Al nanodisks at the interface of the ITO anode and the organic active layer; forming circular plasmonic nanopatch cavities (between the nanodisks and the Al cathode) that sandwich the active layer. Through interactions between the surface plasmon polaritons localized at the nanodisk and the cathode, a tunable broadband resonance peak spanning 450–700 nm in the scattering cross-section spectrum is formed, thereby enhancing the electromagnetic field in the active layer. Compared to an OPV device with a 60-nm-thick PCPDTBT/$ PC_{60} $BM layer, our numerical simulations reveal that integrated absorption enhancements of up to 40 % can be achieved in an equivalent device integrated with an array of nanodisks with a diameter of 100 nm and a periodicity of 250 nm. From the analysis of the structure–performance relationships, implications for the design of these nanopatch cavities for light harvesting in ultrathin OPV devices are discussed. |
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Resonant Aluminum Nanodisk Array for Enhanced Tunable Broadband Light Trapping in Ultrathin Bulk Heterojunction Organic Photovoltaic Devices |
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| score |
7.4014387 |