Focal plane arrays mesastructures formation by ion-beam etching

Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etch...
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Autor*in:	Sednev, M. V. [verfasserIn] Boltar, K. O. Sharonov, Yu. P. Lopukhin, A. A.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	FPA ion-beam etching heteroepitaxial structures microphotoelectronics

Anmerkung:	© Pleiades Publishing, Inc. 2016

Übergeordnetes Werk:	Enthalten in: Journal of communications technology and electronics - Moscow : MAIK Nauka/Interperiodica Publ., 1996, 61(2016), 3 vom: März, Seite 324-327
Übergeordnetes Werk:	volume:61 ; year:2016 ; number:3 ; month:03 ; pages:324-327

Links:	Volltext

DOI / URN:	10.1134/S1064226916030153

Katalog-ID:	SPR020088825

Internformat


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520			\|a Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions.
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700	1		\|a Boltar, K. O. \|4 aut
700	1		\|a Sharonov, Yu. P. \|4 aut
700	1		\|a Lopukhin, A. A. \|4 aut
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912			\|a GBV_ILN_90
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912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
912			\|a GBV_ILN_2129
912			\|a GBV_ILN_2143
912			\|a GBV_ILN_2144
912			\|a GBV_ILN_2147
912			\|a GBV_ILN_2148
912			\|a GBV_ILN_2152
912			\|a GBV_ILN_2153
912			\|a GBV_ILN_2188
912			\|a GBV_ILN_2190
912			\|a GBV_ILN_2232
912			\|a GBV_ILN_2336
912			\|a GBV_ILN_2446
912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
912			\|a GBV_ILN_2522
912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4126
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
912			\|a GBV_ILN_4249
912			\|a GBV_ILN_4251
912			\|a GBV_ILN_4305
912			\|a GBV_ILN_4306
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912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
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952			\|d 61 \|j 2016 \|e 3 \|c 03 \|h 324-327

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allfields	10.1134/S1064226916030153 doi (DE-627)SPR020088825 (SPR)S1064226916030153-e DE-627 ger DE-627 rakwb eng Sednev, M. V. verfasserin aut Focal plane arrays mesastructures formation by ion-beam etching 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Inc. 2016 Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213 Boltar, K. O. aut Sharonov, Yu. P. aut Lopukhin, A. A. aut Enthalten in Journal of communications technology and electronics Moscow : MAIK Nauka/Interperiodica Publ., 1996 61(2016), 3 vom: März, Seite 324-327 (DE-627)350782261 (DE-600)2083436-6 1555-6557 nnns volume:61 year:2016 number:3 month:03 pages:324-327 https://dx.doi.org/10.1134/S1064226916030153 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 61 2016 3 03 324-327
spelling	10.1134/S1064226916030153 doi (DE-627)SPR020088825 (SPR)S1064226916030153-e DE-627 ger DE-627 rakwb eng Sednev, M. V. verfasserin aut Focal plane arrays mesastructures formation by ion-beam etching 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Inc. 2016 Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213 Boltar, K. O. aut Sharonov, Yu. P. aut Lopukhin, A. A. aut Enthalten in Journal of communications technology and electronics Moscow : MAIK Nauka/Interperiodica Publ., 1996 61(2016), 3 vom: März, Seite 324-327 (DE-627)350782261 (DE-600)2083436-6 1555-6557 nnns volume:61 year:2016 number:3 month:03 pages:324-327 https://dx.doi.org/10.1134/S1064226916030153 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 61 2016 3 03 324-327
allfields_unstemmed	10.1134/S1064226916030153 doi (DE-627)SPR020088825 (SPR)S1064226916030153-e DE-627 ger DE-627 rakwb eng Sednev, M. V. verfasserin aut Focal plane arrays mesastructures formation by ion-beam etching 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Inc. 2016 Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213 Boltar, K. O. aut Sharonov, Yu. P. aut Lopukhin, A. A. aut Enthalten in Journal of communications technology and electronics Moscow : MAIK Nauka/Interperiodica Publ., 1996 61(2016), 3 vom: März, Seite 324-327 (DE-627)350782261 (DE-600)2083436-6 1555-6557 nnns volume:61 year:2016 number:3 month:03 pages:324-327 https://dx.doi.org/10.1134/S1064226916030153 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 61 2016 3 03 324-327
allfieldsGer	10.1134/S1064226916030153 doi (DE-627)SPR020088825 (SPR)S1064226916030153-e DE-627 ger DE-627 rakwb eng Sednev, M. V. verfasserin aut Focal plane arrays mesastructures formation by ion-beam etching 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Inc. 2016 Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213 Boltar, K. O. aut Sharonov, Yu. P. aut Lopukhin, A. A. aut Enthalten in Journal of communications technology and electronics Moscow : MAIK Nauka/Interperiodica Publ., 1996 61(2016), 3 vom: März, Seite 324-327 (DE-627)350782261 (DE-600)2083436-6 1555-6557 nnns volume:61 year:2016 number:3 month:03 pages:324-327 https://dx.doi.org/10.1134/S1064226916030153 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 61 2016 3 03 324-327
allfieldsSound	10.1134/S1064226916030153 doi (DE-627)SPR020088825 (SPR)S1064226916030153-e DE-627 ger DE-627 rakwb eng Sednev, M. V. verfasserin aut Focal plane arrays mesastructures formation by ion-beam etching 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Inc. 2016 Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213 Boltar, K. O. aut Sharonov, Yu. P. aut Lopukhin, A. A. aut Enthalten in Journal of communications technology and electronics Moscow : MAIK Nauka/Interperiodica Publ., 1996 61(2016), 3 vom: März, Seite 324-327 (DE-627)350782261 (DE-600)2083436-6 1555-6557 nnns volume:61 year:2016 number:3 month:03 pages:324-327 https://dx.doi.org/10.1134/S1064226916030153 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 61 2016 3 03 324-327
language	English
source	Enthalten in Journal of communications technology and electronics 61(2016), 3 vom: März, Seite 324-327 volume:61 year:2016 number:3 month:03 pages:324-327
sourceStr	Enthalten in Journal of communications technology and electronics 61(2016), 3 vom: März, Seite 324-327 volume:61 year:2016 number:3 month:03 pages:324-327
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	FPA ion-beam etching heteroepitaxial structures microphotoelectronics
isfreeaccess_bool	false
container_title	Journal of communications technology and electronics
authorswithroles_txt_mv	Sednev, M. V. @@aut@@ Boltar, K. O. @@aut@@ Sharonov, Yu. P. @@aut@@ Lopukhin, A. A. @@aut@@
publishDateDaySort_date	2016-03-01T00:00:00Z
hierarchy_top_id	350782261
id	SPR020088825
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author	Sednev, M. V.
spellingShingle	Sednev, M. V. misc FPA misc ion-beam etching misc heteroepitaxial structures misc microphotoelectronics Focal plane arrays mesastructures formation by ion-beam etching
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topic_title	Focal plane arrays mesastructures formation by ion-beam etching FPA (dpeaa)DE-He213 ion-beam etching (dpeaa)DE-He213 heteroepitaxial structures (dpeaa)DE-He213 microphotoelectronics (dpeaa)DE-He213
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title	Focal plane arrays mesastructures formation by ion-beam etching
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title_full	Focal plane arrays mesastructures formation by ion-beam etching
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author_browse	Sednev, M. V. Boltar, K. O. Sharonov, Yu. P. Lopukhin, A. A.
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doi_str_mv	10.1134/S1064226916030153
title_sort	focal plane arrays mesastructures formation by ion-beam etching
title_auth	Focal plane arrays mesastructures formation by ion-beam etching
abstract	Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. © Pleiades Publishing, Inc. 2016
abstractGer	Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. © Pleiades Publishing, Inc. 2016
abstract_unstemmed	Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. The effect of reflection of the ion beam from vertical walls formed during etching may be used for fabrication of submicron separating mesaregions. © Pleiades Publishing, Inc. 2016
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title_short	Focal plane arrays mesastructures formation by ion-beam etching
url	https://dx.doi.org/10.1134/S1064226916030153
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author2	Boltar, K. O. Sharonov, Yu. P. Lopukhin, A. A.
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V.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Focal plane arrays mesastructures formation by ion-beam etching</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Inc. 2016</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The results of investigation of profiles formed by ion-beam etching of semiconductor structures through a photolithographic mask are presented. The minimum dimensions of unmasked regions on the surfaces of two studied structures are 2 and 5 μm, respectively. It is demonstrated that the etching rate reduces with reduction in the width of the unmasked gap. 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Focal plane arrays mesastructures formation by ion-beam etching

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