High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm
Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometr...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhang, Z. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2011 |
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| Schlagwörter: |
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| Anmerkung: |
© Pleiades Publishing, Ltd. 2011 |
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| Übergeordnetes Werk: |
Enthalten in: Laser physics - Bristol [u.a.] : IOP Publ., 2006, 21(2011), 6 vom: 03. Mai, Seite 1078-1080 |
|---|---|
| Übergeordnetes Werk: |
volume:21 ; year:2011 ; number:6 ; day:03 ; month:05 ; pages:1078-1080 |
| Links: |
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| DOI / URN: |
10.1134/S1054660X11110399 |
|---|
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SPR020136749 |
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| 520 | |a Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. | ||
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| 700 | 1 | |a Xu, L. J. |4 aut | |
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10.1134/S1054660X11110399 doi (DE-627)SPR020136749 (SPR)S1054660X11110399-e DE-627 ger DE-627 rakwb eng Zhang, Z. verfasserin aut High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. Pump Power (dpeaa)DE-He213 Laser Phys (dpeaa)DE-He213 Thulium (dpeaa)DE-He213 Slope Efficiency (dpeaa)DE-He213 Optical Conversion Efficiency (dpeaa)DE-He213 Ruan, N. J. aut Zhou, F. aut Liu, Z. J. aut Xu, L. J. aut Enthalten in Laser physics Bristol [u.a.] : IOP Publ., 2006 21(2011), 6 vom: 03. Mai, Seite 1078-1080 (DE-627)509758444 (DE-600)2228434-5 1555-6611 nnns volume:21 year:2011 number:6 day:03 month:05 pages:1078-1080 https://dx.doi.org/10.1134/S1054660X11110399 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_24 GBV_ILN_40 GBV_ILN_63 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_110 GBV_ILN_150 GBV_ILN_161 GBV_ILN_213 GBV_ILN_230 GBV_ILN_293 GBV_ILN_702 GBV_ILN_2190 AR 21 2011 6 03 05 1078-1080 |
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10.1134/S1054660X11110399 doi (DE-627)SPR020136749 (SPR)S1054660X11110399-e DE-627 ger DE-627 rakwb eng Zhang, Z. verfasserin aut High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. Pump Power (dpeaa)DE-He213 Laser Phys (dpeaa)DE-He213 Thulium (dpeaa)DE-He213 Slope Efficiency (dpeaa)DE-He213 Optical Conversion Efficiency (dpeaa)DE-He213 Ruan, N. J. aut Zhou, F. aut Liu, Z. J. aut Xu, L. J. aut Enthalten in Laser physics Bristol [u.a.] : IOP Publ., 2006 21(2011), 6 vom: 03. Mai, Seite 1078-1080 (DE-627)509758444 (DE-600)2228434-5 1555-6611 nnns volume:21 year:2011 number:6 day:03 month:05 pages:1078-1080 https://dx.doi.org/10.1134/S1054660X11110399 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_24 GBV_ILN_40 GBV_ILN_63 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_110 GBV_ILN_150 GBV_ILN_161 GBV_ILN_213 GBV_ILN_230 GBV_ILN_293 GBV_ILN_702 GBV_ILN_2190 AR 21 2011 6 03 05 1078-1080 |
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10.1134/S1054660X11110399 doi (DE-627)SPR020136749 (SPR)S1054660X11110399-e DE-627 ger DE-627 rakwb eng Zhang, Z. verfasserin aut High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. Pump Power (dpeaa)DE-He213 Laser Phys (dpeaa)DE-He213 Thulium (dpeaa)DE-He213 Slope Efficiency (dpeaa)DE-He213 Optical Conversion Efficiency (dpeaa)DE-He213 Ruan, N. J. aut Zhou, F. aut Liu, Z. J. aut Xu, L. J. aut Enthalten in Laser physics Bristol [u.a.] : IOP Publ., 2006 21(2011), 6 vom: 03. Mai, Seite 1078-1080 (DE-627)509758444 (DE-600)2228434-5 1555-6611 nnns volume:21 year:2011 number:6 day:03 month:05 pages:1078-1080 https://dx.doi.org/10.1134/S1054660X11110399 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_24 GBV_ILN_40 GBV_ILN_63 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_110 GBV_ILN_150 GBV_ILN_161 GBV_ILN_213 GBV_ILN_230 GBV_ILN_293 GBV_ILN_702 GBV_ILN_2190 AR 21 2011 6 03 05 1078-1080 |
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10.1134/S1054660X11110399 doi (DE-627)SPR020136749 (SPR)S1054660X11110399-e DE-627 ger DE-627 rakwb eng Zhang, Z. verfasserin aut High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. Pump Power (dpeaa)DE-He213 Laser Phys (dpeaa)DE-He213 Thulium (dpeaa)DE-He213 Slope Efficiency (dpeaa)DE-He213 Optical Conversion Efficiency (dpeaa)DE-He213 Ruan, N. J. aut Zhou, F. aut Liu, Z. J. aut Xu, L. J. aut Enthalten in Laser physics Bristol [u.a.] : IOP Publ., 2006 21(2011), 6 vom: 03. Mai, Seite 1078-1080 (DE-627)509758444 (DE-600)2228434-5 1555-6611 nnns volume:21 year:2011 number:6 day:03 month:05 pages:1078-1080 https://dx.doi.org/10.1134/S1054660X11110399 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_24 GBV_ILN_40 GBV_ILN_63 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_110 GBV_ILN_150 GBV_ILN_161 GBV_ILN_213 GBV_ILN_230 GBV_ILN_293 GBV_ILN_702 GBV_ILN_2190 AR 21 2011 6 03 05 1078-1080 |
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10.1134/S1054660X11110399 doi (DE-627)SPR020136749 (SPR)S1054660X11110399-e DE-627 ger DE-627 rakwb eng Zhang, Z. verfasserin aut High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2011 Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. Pump Power (dpeaa)DE-He213 Laser Phys (dpeaa)DE-He213 Thulium (dpeaa)DE-He213 Slope Efficiency (dpeaa)DE-He213 Optical Conversion Efficiency (dpeaa)DE-He213 Ruan, N. J. aut Zhou, F. aut Liu, Z. J. aut Xu, L. J. aut Enthalten in Laser physics Bristol [u.a.] : IOP Publ., 2006 21(2011), 6 vom: 03. Mai, Seite 1078-1080 (DE-627)509758444 (DE-600)2228434-5 1555-6611 nnns volume:21 year:2011 number:6 day:03 month:05 pages:1078-1080 https://dx.doi.org/10.1134/S1054660X11110399 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_20 GBV_ILN_24 GBV_ILN_40 GBV_ILN_63 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_110 GBV_ILN_150 GBV_ILN_161 GBV_ILN_213 GBV_ILN_230 GBV_ILN_293 GBV_ILN_702 GBV_ILN_2190 AR 21 2011 6 03 05 1078-1080 |
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High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm |
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High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm |
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Zhang, Z. |
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Laser physics |
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2011 |
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Zhang, Z. Ruan, N. J. Zhou, F. Liu, Z. J. Xu, L. J. |
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Elektronische Aufsätze |
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Zhang, Z. |
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10.1134/S1054660X11110399 |
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high power continuous wave tm:yap laser dual-end-pumped by laser diode at 795 nm |
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High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm |
| abstract |
Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. © Pleiades Publishing, Ltd. 2011 |
| abstractGer |
Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. © Pleiades Publishing, Ltd. 2011 |
| abstract_unstemmed |
Abstract A high power continuous wave diode-pumped Tm:YAP laser at room temperature was presented in this paper. The Tm:YAP crystal with doped concentration of 3 at % for the experiment was c-cut with dimensions of 3 × 3 × 8 $ mm^{3} $. A 795 nm continuous wave laser diode in dual-end-pumped geometry was used to generate 1.94 μm laser output. At the pump power of 38.9 W, the highest output power reached 12.3 W by use of 15% output coupling, corresponding to optical conversion efficiency was 31.6% and the slope efficiency was 38.2%. © Pleiades Publishing, Ltd. 2011 |
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High power continuous wave Tm:YAP laser dual-end-pumped by laser diode at 795 nm |
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