Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys

Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits f...
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Autor*in:	Alieva, T. D. [verfasserIn] Akhundova, N. M. Abdinova, G. D. Bagieva, G. Z. Abdinov, D. Sh.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2016

Schlagwörter:	single crystal contact alloy work of adhesion strength of adhesion contact angle surface tension contact resistance

Anmerkung:	© Pleiades Publishing, Ltd. 2016

Übergeordnetes Werk:	Enthalten in: Russian journal of physical chemistry - Berlin : Springer Science+Business Media, 2007, 90(2016), 5 vom: Mai, Seite 1070-1073
Übergeordnetes Werk:	volume:90 ; year:2016 ; number:5 ; month:05 ; pages:1070-1073

Links:	Volltext

DOI / URN:	10.1134/S0036024416050046

Katalog-ID:	SPR020362935

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700	1		\|a Abdinov, D. Sh. \|4 aut
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publishDate	2016
allfields	10.1134/S0036024416050046 doi (DE-627)SPR020362935 (SPR)S0036024416050046-e DE-627 ger DE-627 rakwb eng Alieva, T. D. verfasserin aut Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2016 Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213 Akhundova, N. M. aut Abdinova, G. D. aut Bagieva, G. Z. aut Abdinov, D. Sh. aut Enthalten in Russian journal of physical chemistry Berlin : Springer Science+Business Media, 2007 90(2016), 5 vom: Mai, Seite 1070-1073 (DE-627)633755036 (DE-600)2569139-9 1531-863X nnns volume:90 year:2016 number:5 month:05 pages:1070-1073 https://dx.doi.org/10.1134/S0036024416050046 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2016 5 05 1070-1073
spelling	10.1134/S0036024416050046 doi (DE-627)SPR020362935 (SPR)S0036024416050046-e DE-627 ger DE-627 rakwb eng Alieva, T. D. verfasserin aut Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2016 Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213 Akhundova, N. M. aut Abdinova, G. D. aut Bagieva, G. Z. aut Abdinov, D. Sh. aut Enthalten in Russian journal of physical chemistry Berlin : Springer Science+Business Media, 2007 90(2016), 5 vom: Mai, Seite 1070-1073 (DE-627)633755036 (DE-600)2569139-9 1531-863X nnns volume:90 year:2016 number:5 month:05 pages:1070-1073 https://dx.doi.org/10.1134/S0036024416050046 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2016 5 05 1070-1073
allfields_unstemmed	10.1134/S0036024416050046 doi (DE-627)SPR020362935 (SPR)S0036024416050046-e DE-627 ger DE-627 rakwb eng Alieva, T. D. verfasserin aut Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2016 Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213 Akhundova, N. M. aut Abdinova, G. D. aut Bagieva, G. Z. aut Abdinov, D. Sh. aut Enthalten in Russian journal of physical chemistry Berlin : Springer Science+Business Media, 2007 90(2016), 5 vom: Mai, Seite 1070-1073 (DE-627)633755036 (DE-600)2569139-9 1531-863X nnns volume:90 year:2016 number:5 month:05 pages:1070-1073 https://dx.doi.org/10.1134/S0036024416050046 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2016 5 05 1070-1073
allfieldsGer	10.1134/S0036024416050046 doi (DE-627)SPR020362935 (SPR)S0036024416050046-e DE-627 ger DE-627 rakwb eng Alieva, T. D. verfasserin aut Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2016 Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213 Akhundova, N. M. aut Abdinova, G. D. aut Bagieva, G. Z. aut Abdinov, D. Sh. aut Enthalten in Russian journal of physical chemistry Berlin : Springer Science+Business Media, 2007 90(2016), 5 vom: Mai, Seite 1070-1073 (DE-627)633755036 (DE-600)2569139-9 1531-863X nnns volume:90 year:2016 number:5 month:05 pages:1070-1073 https://dx.doi.org/10.1134/S0036024416050046 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2016 5 05 1070-1073
allfieldsSound	10.1134/S0036024416050046 doi (DE-627)SPR020362935 (SPR)S0036024416050046-e DE-627 ger DE-627 rakwb eng Alieva, T. D. verfasserin aut Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys 2016 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Pleiades Publishing, Ltd. 2016 Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213 Akhundova, N. M. aut Abdinova, G. D. aut Bagieva, G. Z. aut Abdinov, D. Sh. aut Enthalten in Russian journal of physical chemistry Berlin : Springer Science+Business Media, 2007 90(2016), 5 vom: Mai, Seite 1070-1073 (DE-627)633755036 (DE-600)2569139-9 1531-863X nnns volume:90 year:2016 number:5 month:05 pages:1070-1073 https://dx.doi.org/10.1134/S0036024416050046 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER SSG-OLC-PHA GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 90 2016 5 05 1070-1073
language	English
source	Enthalten in Russian journal of physical chemistry 90(2016), 5 vom: Mai, Seite 1070-1073 volume:90 year:2016 number:5 month:05 pages:1070-1073
sourceStr	Enthalten in Russian journal of physical chemistry 90(2016), 5 vom: Mai, Seite 1070-1073 volume:90 year:2016 number:5 month:05 pages:1070-1073
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	single crystal contact alloy work of adhesion strength of adhesion contact angle surface tension contact resistance
isfreeaccess_bool	false
container_title	Russian journal of physical chemistry
authorswithroles_txt_mv	Alieva, T. D. @@aut@@ Akhundova, N. M. @@aut@@ Abdinova, G. D. @@aut@@ Bagieva, G. Z. @@aut@@ Abdinov, D. Sh. @@aut@@
publishDateDaySort_date	2016-05-01T00:00:00Z
hierarchy_top_id	633755036
id	SPR020362935
language_de	englisch
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D.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2016</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© Pleiades Publishing, Ltd. 2016</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. 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author	Alieva, T. D.
spellingShingle	Alieva, T. D. misc single crystal misc contact alloy misc work of adhesion misc strength of adhesion misc contact angle misc surface tension misc contact resistance Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys
authorStr	Alieva, T. D.
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topic_title	Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys single crystal (dpeaa)DE-He213 contact alloy (dpeaa)DE-He213 work of adhesion (dpeaa)DE-He213 strength of adhesion (dpeaa)DE-He213 contact angle (dpeaa)DE-He213 surface tension (dpeaa)DE-He213 contact resistance (dpeaa)DE-He213
topic	misc single crystal misc contact alloy misc work of adhesion misc strength of adhesion misc contact angle misc surface tension misc contact resistance
topic_unstemmed	misc single crystal misc contact alloy misc work of adhesion misc strength of adhesion misc contact angle misc surface tension misc contact resistance
topic_browse	misc single crystal misc contact alloy misc work of adhesion misc strength of adhesion misc contact angle misc surface tension misc contact resistance
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys
ctrlnum	(DE-627)SPR020362935 (SPR)S0036024416050046-e
title_full	Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys
author_sort	Alieva, T. D.
journal	Russian journal of physical chemistry
journalStr	Russian journal of physical chemistry
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author_browse	Alieva, T. D. Akhundova, N. M. Abdinova, G. D. Bagieva, G. Z. Abdinov, D. Sh.
container_volume	90
format_se	Elektronische Aufsätze
author-letter	Alieva, T. D.
doi_str_mv	10.1134/S0036024416050046
title_sort	electric and adhesion properties of an interface between $ sn_{1 − x} %$ mn_{x} $te single crystals and bi–sn alloys
title_auth	Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys
abstract	Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. © Pleiades Publishing, Ltd. 2016
abstractGer	Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. © Pleiades Publishing, Ltd. 2016
abstract_unstemmed	Abstract The adhesion and electric properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and a 57 wt % Bi and 43 wt % Sn alloy in a temperature range of ∼77–300 K are studied. It is shown that the Bi–Sn alloy and the above single crystals form an ohmic contact that exhibits fairly high work of adhesion and strength of adhesion, along with low contact resistance. The deposition of the Bi–Sn alloy on the end faces of the crystals results in the formation of such intermediate phases as $ Bi_{2} %$ Te_{3} $ and SnTe at the interface, the doping of the near-contact region of the crystal, and the filling of vacancies in the tin sublattice in this region with diffusing atoms of the contact alloy components. © Pleiades Publishing, Ltd. 2016
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container_issue	5
title_short	Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys
url	https://dx.doi.org/10.1134/S0036024416050046
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author2	Akhundova, N. M. Abdinova, G. D. Bagieva, G. Z. Abdinov, D. Sh
author2Str	Akhundova, N. M. Abdinova, G. D. Bagieva, G. Z. Abdinov, D. Sh
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doi_str	10.1134/S0036024416050046
up_date	2024-07-03T15:35:18.456Z
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Electric and adhesion properties of an interface between $ Sn_{1 − x} %$ Mn_{x} $Te single crystals and Bi–Sn alloys

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