Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $
Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative res...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Jin, Zhao [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2015 |
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| Schlagwörter: |
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| Anmerkung: |
© Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of Wuhan University of Technology - Wuhan, 2002, 30(2015), 5 vom: Okt., Seite 888-893 |
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| Übergeordnetes Werk: |
volume:30 ; year:2015 ; number:5 ; month:10 ; pages:888-893 |
| Links: |
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| DOI / URN: |
10.1007/s11595-015-1245-z |
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| Katalog-ID: |
SPR02098586X |
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| 245 | 1 | 0 | |a Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
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| 520 | |a Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. | ||
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| 700 | 1 | |a Guo, Chen |4 aut | |
| 700 | 1 | |a Liu, Ce |4 aut | |
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10.1007/s11595-015-1245-z doi (DE-627)SPR02098586X (SPR)s11595-015-1245-z-e DE-627 ger DE-627 rakwb eng Jin, Zhao verfasserin aut Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 Qiao, Liping aut Liu, Lidong aut He, Zhili aut Guo, Chen aut Liu, Ce aut Enthalten in Journal of Wuhan University of Technology Wuhan, 2002 30(2015), 5 vom: Okt., Seite 888-893 (DE-627)529093405 (DE-600)2299589-4 1993-0437 nnns volume:30 year:2015 number:5 month:10 pages:888-893 https://dx.doi.org/10.1007/s11595-015-1245-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 30 2015 5 10 888-893 |
| spelling |
10.1007/s11595-015-1245-z doi (DE-627)SPR02098586X (SPR)s11595-015-1245-z-e DE-627 ger DE-627 rakwb eng Jin, Zhao verfasserin aut Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 Qiao, Liping aut Liu, Lidong aut He, Zhili aut Guo, Chen aut Liu, Ce aut Enthalten in Journal of Wuhan University of Technology Wuhan, 2002 30(2015), 5 vom: Okt., Seite 888-893 (DE-627)529093405 (DE-600)2299589-4 1993-0437 nnns volume:30 year:2015 number:5 month:10 pages:888-893 https://dx.doi.org/10.1007/s11595-015-1245-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 30 2015 5 10 888-893 |
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10.1007/s11595-015-1245-z doi (DE-627)SPR02098586X (SPR)s11595-015-1245-z-e DE-627 ger DE-627 rakwb eng Jin, Zhao verfasserin aut Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 Qiao, Liping aut Liu, Lidong aut He, Zhili aut Guo, Chen aut Liu, Ce aut Enthalten in Journal of Wuhan University of Technology Wuhan, 2002 30(2015), 5 vom: Okt., Seite 888-893 (DE-627)529093405 (DE-600)2299589-4 1993-0437 nnns volume:30 year:2015 number:5 month:10 pages:888-893 https://dx.doi.org/10.1007/s11595-015-1245-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 30 2015 5 10 888-893 |
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10.1007/s11595-015-1245-z doi (DE-627)SPR02098586X (SPR)s11595-015-1245-z-e DE-627 ger DE-627 rakwb eng Jin, Zhao verfasserin aut Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 Qiao, Liping aut Liu, Lidong aut He, Zhili aut Guo, Chen aut Liu, Ce aut Enthalten in Journal of Wuhan University of Technology Wuhan, 2002 30(2015), 5 vom: Okt., Seite 888-893 (DE-627)529093405 (DE-600)2299589-4 1993-0437 nnns volume:30 year:2015 number:5 month:10 pages:888-893 https://dx.doi.org/10.1007/s11595-015-1245-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 30 2015 5 10 888-893 |
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10.1007/s11595-015-1245-z doi (DE-627)SPR02098586X (SPR)s11595-015-1245-z-e DE-627 ger DE-627 rakwb eng Jin, Zhao verfasserin aut Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ 2015 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 Qiao, Liping aut Liu, Lidong aut He, Zhili aut Guo, Chen aut Liu, Ce aut Enthalten in Journal of Wuhan University of Technology Wuhan, 2002 30(2015), 5 vom: Okt., Seite 888-893 (DE-627)529093405 (DE-600)2299589-4 1993-0437 nnns volume:30 year:2015 number:5 month:10 pages:888-893 https://dx.doi.org/10.1007/s11595-015-1245-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 30 2015 5 10 888-893 |
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Jin, Zhao @@aut@@ Qiao, Liping @@aut@@ Liu, Lidong @@aut@@ He, Zhili @@aut@@ Guo, Chen @@aut@@ Liu, Ce @@aut@@ |
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Jin, Zhao |
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Jin, Zhao misc strain misc intrinsic carrier concentration misc KP theory misc density of state Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
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Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ strain (dpeaa)DE-He213 intrinsic carrier concentration (dpeaa)DE-He213 KP theory (dpeaa)DE-He213 density of state (dpeaa)DE-He213 |
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Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
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Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
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Jin, Zhao Qiao, Liping Liu, Lidong He, Zhili Guo, Chen Liu, Ce |
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intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-strained-si and strained-$ si_{1-x} %$ ge_{x} $ |
| title_auth |
Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
| abstract |
Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
| abstractGer |
Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
| abstract_unstemmed |
Abstract Intrinsic carrier concentration (ni) is one of the most important physical parameters for understanding the physics of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and $ Si_{1-x} %$ Ge_{x} $ materials has been still lacking. In this paper, by analyzing the band structure of strained Si and $ Si_{1-x} %$ Ge_{x} $ materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (Nc and Nv) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and $ Si_{1-x} %$ Ge_{x} $ (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. © Wuhan University of Technology and Springer-Verlag Berlin Heidelberg 2015 |
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5 |
| title_short |
Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-$ Si_{1-x} %$ Ge_{x} $ |
| url |
https://dx.doi.org/10.1007/s11595-015-1245-z |
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| author2 |
Qiao, Liping Liu, Lidong He, Zhili Guo, Chen Liu, Ce |
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Qiao, Liping Liu, Lidong He, Zhili Guo, Chen Liu, Ce |
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529093405 |
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| doi_str |
10.1007/s11595-015-1245-z |
| up_date |
2024-07-03T19:32:21.970Z |
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| score |
7.400943 |