Melting of secondary-phase particles in Al-Mg-Si alloys
Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in exces...
Ausführliche Beschreibung
Autor*in: |
Reiso, Oddvin [verfasserIn] |
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E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
1993 |
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Schlagwörter: |
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Anmerkung: |
© The Minerals, Metals and Materials Society, and ASM International 1993 |
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Übergeordnetes Werk: |
Enthalten in: Metallurgical and materials transactions - Boston : Springer, 1975, 24(1993), 12 vom: 01. Dez., Seite 2629-2641 |
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Übergeordnetes Werk: |
volume:24 ; year:1993 ; number:12 ; day:01 ; month:12 ; pages:2629-2641 |
Links: |
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DOI / URN: |
10.1007/BF02659487 |
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Katalog-ID: |
SPR021357366 |
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520 | |a Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. | ||
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700 | 1 | |a Ryum, Nils |4 aut | |
700 | 1 | |a Strid, Jan |4 aut | |
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1993 |
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10.1007/BF02659487 doi (DE-627)SPR021357366 (SPR)BF02659487-e DE-627 ger DE-627 rakwb eng Reiso, Oddvin verfasserin aut Melting of secondary-phase particles in Al-Mg-Si alloys 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals and Materials Society, and ASM International 1993 Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 Ryum, Nils aut Strid, Jan aut Enthalten in Metallurgical and materials transactions Boston : Springer, 1975 24(1993), 12 vom: 01. Dez., Seite 2629-2641 (DE-627)325571996 (DE-600)2037517-7 1543-1940 nnns volume:24 year:1993 number:12 day:01 month:12 pages:2629-2641 https://dx.doi.org/10.1007/BF02659487 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_266 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 24 1993 12 01 12 2629-2641 |
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10.1007/BF02659487 doi (DE-627)SPR021357366 (SPR)BF02659487-e DE-627 ger DE-627 rakwb eng Reiso, Oddvin verfasserin aut Melting of secondary-phase particles in Al-Mg-Si alloys 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals and Materials Society, and ASM International 1993 Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 Ryum, Nils aut Strid, Jan aut Enthalten in Metallurgical and materials transactions Boston : Springer, 1975 24(1993), 12 vom: 01. Dez., Seite 2629-2641 (DE-627)325571996 (DE-600)2037517-7 1543-1940 nnns volume:24 year:1993 number:12 day:01 month:12 pages:2629-2641 https://dx.doi.org/10.1007/BF02659487 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_266 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 24 1993 12 01 12 2629-2641 |
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10.1007/BF02659487 doi (DE-627)SPR021357366 (SPR)BF02659487-e DE-627 ger DE-627 rakwb eng Reiso, Oddvin verfasserin aut Melting of secondary-phase particles in Al-Mg-Si alloys 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals and Materials Society, and ASM International 1993 Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 Ryum, Nils aut Strid, Jan aut Enthalten in Metallurgical and materials transactions Boston : Springer, 1975 24(1993), 12 vom: 01. Dez., Seite 2629-2641 (DE-627)325571996 (DE-600)2037517-7 1543-1940 nnns volume:24 year:1993 number:12 day:01 month:12 pages:2629-2641 https://dx.doi.org/10.1007/BF02659487 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_266 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 24 1993 12 01 12 2629-2641 |
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10.1007/BF02659487 doi (DE-627)SPR021357366 (SPR)BF02659487-e DE-627 ger DE-627 rakwb eng Reiso, Oddvin verfasserin aut Melting of secondary-phase particles in Al-Mg-Si alloys 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals and Materials Society, and ASM International 1993 Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 Ryum, Nils aut Strid, Jan aut Enthalten in Metallurgical and materials transactions Boston : Springer, 1975 24(1993), 12 vom: 01. Dez., Seite 2629-2641 (DE-627)325571996 (DE-600)2037517-7 1543-1940 nnns volume:24 year:1993 number:12 day:01 month:12 pages:2629-2641 https://dx.doi.org/10.1007/BF02659487 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_266 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 24 1993 12 01 12 2629-2641 |
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10.1007/BF02659487 doi (DE-627)SPR021357366 (SPR)BF02659487-e DE-627 ger DE-627 rakwb eng Reiso, Oddvin verfasserin aut Melting of secondary-phase particles in Al-Mg-Si alloys 1993 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals and Materials Society, and ASM International 1993 Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 Ryum, Nils aut Strid, Jan aut Enthalten in Metallurgical and materials transactions Boston : Springer, 1975 24(1993), 12 vom: 01. Dez., Seite 2629-2641 (DE-627)325571996 (DE-600)2037517-7 1543-1940 nnns volume:24 year:1993 number:12 day:01 month:12 pages:2629-2641 https://dx.doi.org/10.1007/BF02659487 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_101 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_121 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_206 GBV_ILN_224 GBV_ILN_266 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_374 GBV_ILN_602 GBV_ILN_647 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2018 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2043 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2056 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2158 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2193 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_2808 GBV_ILN_4012 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4126 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4277 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4346 GBV_ILN_4367 GBV_ILN_4393 GBV_ILN_4700 GBV_ILN_4753 AR 24 1993 12 01 12 2629-2641 |
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In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Metallurgical Transaction</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Annealing Time</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Eutectic Temperature</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Dissolution Time</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Ternary Eutectic</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Ryum, Nils</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Strid, Jan</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Metallurgical and materials transactions</subfield><subfield code="d">Boston : Springer, 1975</subfield><subfield code="g">24(1993), 12 vom: 01. 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Melting of secondary-phase particles in Al-Mg-Si alloys Metallurgical Transaction (dpeaa)DE-He213 Annealing Time (dpeaa)DE-He213 Eutectic Temperature (dpeaa)DE-He213 Dissolution Time (dpeaa)DE-He213 Ternary Eutectic (dpeaa)DE-He213 |
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melting of secondary-phase particles in al-mg-si alloys |
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Melting of secondary-phase particles in Al-Mg-Si alloys |
abstract |
Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. © The Minerals, Metals and Materials Society, and ASM International 1993 |
abstractGer |
Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. © The Minerals, Metals and Materials Society, and ASM International 1993 |
abstract_unstemmed |
Abstract The melting of secondary-phase particles—or, more precisely, the melting of such particles together with the surrounding matrix—in two ternary Al-Mg-Si alloys has been studied. In the quasi-binary Al-$ Mg_{2} $Si alloy, one melting reaction is found. In the alloy with an Si content in excess of that necessary to form $ Mg_{2} $Si, three different melting reactions are observed. At upquenching temperatures above the eutectic temperature, the reaction rates are very high, and it is assumed that they are controlled by diffusion of the alloying elements in the liquid. Melting is also observed after prolonged annealing at temperatures below the eutectic temperature in these alloys, which is explained by the different diffusion rates of Mg and Si. The rate of the melting reaction is in this case assumed to be controlled by diffusion of the alloying elements in the solid α-Al phase. It is shown that calculation of the particle/matrix interface composition, which determines when melting is possible, cannot be made solely on the basis of the phase diagram, but must also include the rate of diffusion of Mg and Si. The melting temperatures observed differ somewhat from the accepted eutectic temperatures for these alloys. On prolonged annealing, the liquid droplets formed dissolve into the surrounding matrix and their chemical composition is found to change during dissolution. The resulting eutectic structure after quenching of a droplet is explained by the phase diagram and the different diffusion rates of Mg and Si as well as by the nucleation conditions of the constituents involved. © The Minerals, Metals and Materials Society, and ASM International 1993 |
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container_issue |
12 |
title_short |
Melting of secondary-phase particles in Al-Mg-Si alloys |
url |
https://dx.doi.org/10.1007/BF02659487 |
remote_bool |
true |
author2 |
Ryum, Nils Strid, Jan |
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Ryum, Nils Strid, Jan |
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doi_str |
10.1007/BF02659487 |
up_date |
2024-07-03T22:03:25.301Z |
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score |
7.4004097 |