Structural and Passivative Behaviors of Cu(In) Thin Film

Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–6...
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Autor*in:	Fang, J. S. [verfasserIn] Hsieh, H. Y.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2006

Schlagwörter:	Thin-film transistor copper metallization Cu-alloy thin film self-passivation adhesion low resistivity

Anmerkung:	© TMS 2006

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 36(2006), 2 vom: 28. Dez., Seite 129-135
Übergeordnetes Werk:	volume:36 ; year:2006 ; number:2 ; day:28 ; month:12 ; pages:129-135

Links:	Volltext

DOI / URN:	10.1007/s11664-006-0017-0

Katalog-ID:	SPR021480923

Internformat


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520			\|a Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits.
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matchkey_str	article:1543186X:2006----::tutrlnpsiaieeair
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publishDate	2006
allfields	10.1007/s11664-006-0017-0 doi (DE-627)SPR021480923 (SPR)s11664-006-0017-0-e DE-627 ger DE-627 rakwb eng Fang, J. S. verfasserin aut Structural and Passivative Behaviors of Cu(In) Thin Film 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2006 Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213 Hsieh, H. Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2006), 2 vom: 28. Dez., Seite 129-135 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2006 number:2 day:28 month:12 pages:129-135 https://dx.doi.org/10.1007/s11664-006-0017-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2006 2 28 12 129-135
spelling	10.1007/s11664-006-0017-0 doi (DE-627)SPR021480923 (SPR)s11664-006-0017-0-e DE-627 ger DE-627 rakwb eng Fang, J. S. verfasserin aut Structural and Passivative Behaviors of Cu(In) Thin Film 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2006 Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213 Hsieh, H. Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2006), 2 vom: 28. Dez., Seite 129-135 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2006 number:2 day:28 month:12 pages:129-135 https://dx.doi.org/10.1007/s11664-006-0017-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2006 2 28 12 129-135
allfields_unstemmed	10.1007/s11664-006-0017-0 doi (DE-627)SPR021480923 (SPR)s11664-006-0017-0-e DE-627 ger DE-627 rakwb eng Fang, J. S. verfasserin aut Structural and Passivative Behaviors of Cu(In) Thin Film 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2006 Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213 Hsieh, H. Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2006), 2 vom: 28. Dez., Seite 129-135 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2006 number:2 day:28 month:12 pages:129-135 https://dx.doi.org/10.1007/s11664-006-0017-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2006 2 28 12 129-135
allfieldsGer	10.1007/s11664-006-0017-0 doi (DE-627)SPR021480923 (SPR)s11664-006-0017-0-e DE-627 ger DE-627 rakwb eng Fang, J. S. verfasserin aut Structural and Passivative Behaviors of Cu(In) Thin Film 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2006 Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213 Hsieh, H. Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2006), 2 vom: 28. Dez., Seite 129-135 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2006 number:2 day:28 month:12 pages:129-135 https://dx.doi.org/10.1007/s11664-006-0017-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2006 2 28 12 129-135
allfieldsSound	10.1007/s11664-006-0017-0 doi (DE-627)SPR021480923 (SPR)s11664-006-0017-0-e DE-627 ger DE-627 rakwb eng Fang, J. S. verfasserin aut Structural and Passivative Behaviors of Cu(In) Thin Film 2006 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2006 Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213 Hsieh, H. Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2006), 2 vom: 28. Dez., Seite 129-135 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2006 number:2 day:28 month:12 pages:129-135 https://dx.doi.org/10.1007/s11664-006-0017-0 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2006 2 28 12 129-135
language	English
source	Enthalten in Journal of electronic materials 36(2006), 2 vom: 28. Dez., Seite 129-135 volume:36 year:2006 number:2 day:28 month:12 pages:129-135
sourceStr	Enthalten in Journal of electronic materials 36(2006), 2 vom: 28. Dez., Seite 129-135 volume:36 year:2006 number:2 day:28 month:12 pages:129-135
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Thin-film transistor copper metallization Cu-alloy thin film self-passivation adhesion low resistivity
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Fang, J. S. @@aut@@ Hsieh, H. Y. @@aut@@
publishDateDaySort_date	2006-12-28T00:00:00Z
hierarchy_top_id	324918739
id	SPR021480923
language_de	englisch
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author	Fang, J. S.
spellingShingle	Fang, J. S. misc Thin-film transistor misc copper metallization misc Cu-alloy thin film misc self-passivation misc adhesion misc low resistivity Structural and Passivative Behaviors of Cu(In) Thin Film
authorStr	Fang, J. S.
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topic_title	Structural and Passivative Behaviors of Cu(In) Thin Film Thin-film transistor (dpeaa)DE-He213 copper metallization (dpeaa)DE-He213 Cu-alloy thin film (dpeaa)DE-He213 self-passivation (dpeaa)DE-He213 adhesion (dpeaa)DE-He213 low resistivity (dpeaa)DE-He213
topic	misc Thin-film transistor misc copper metallization misc Cu-alloy thin film misc self-passivation misc adhesion misc low resistivity
topic_unstemmed	misc Thin-film transistor misc copper metallization misc Cu-alloy thin film misc self-passivation misc adhesion misc low resistivity
topic_browse	misc Thin-film transistor misc copper metallization misc Cu-alloy thin film misc self-passivation misc adhesion misc low resistivity
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Structural and Passivative Behaviors of Cu(In) Thin Film
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title_full	Structural and Passivative Behaviors of Cu(In) Thin Film
author_sort	Fang, J. S.
journal	Journal of electronic materials
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container_start_page	129
author_browse	Fang, J. S. Hsieh, H. Y.
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author-letter	Fang, J. S.
doi_str_mv	10.1007/s11664-006-0017-0
title_sort	structural and passivative behaviors of cu(in) thin film
title_auth	Structural and Passivative Behaviors of Cu(In) Thin Film
abstract	Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. © TMS 2006
abstractGer	Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. © TMS 2006
abstract_unstemmed	Abstract This investigation prepares a low-resistivity and self-passivated Cu(In) thin film. The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. The results of this study can be potentially exploited in the application of thin-film transistor–liquid crystal display gate electrodes and copper metallization in integrated circuits. © TMS 2006
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title_short	Structural and Passivative Behaviors of Cu(In) Thin Film
url	https://dx.doi.org/10.1007/s11664-006-0017-0
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doi_str	10.1007/s11664-006-0017-0
up_date	2024-07-03T22:49:13.527Z
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The dissociation behaviors of dilute Cu-alloy thin films, containing 1.5–5at.%In, were prepared on glass substrates by a cosputter deposition, and were subsequently annealed in the temperature range of 200–600 °C for 10–30 min. Thus, self-passivated Cu thin films in the form $ In_{2} %$ O_{3} $/Cu/$ SiO_{2} $ were obtained by annealing Cu(In) alloy films at an elevated temperature. Structural analysis indicated that only strong copper diffraction peaks were detected from the as-deposited film, and an $ In_{2} %$ O_{3} $ phase was formed on the surface of the film by annealing the film at an elevated temperature under oxygen ambient. The formation of $ In_{2} %$ O_{3} $/Cu/$ SiO_{2 } $improved the resistivity, adhesion to $ SiO_{2} $, and passivative capability of the studied film. A dramatic reduction in the resistivity of the film occurred at 500 °C, and was considered to be associated with preferential indium segregation during annealing, yielding a low resistivity below 2.92 μΩcm. 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