Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe

The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hyd...
Ausführliche Beschreibung

Gespeichert in:

Autor*in:	Stoltz, A.J. [verfasserIn] Varesi, J.B. Benson, J.D.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	Inductively coupled plasma (ICP) electron cyclotron resonance (ECR) mercury cadmium telluride (HgCdTe) cadmium telluride (CdTe) plasma

Anmerkung:	© TMS 2007

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 36(2007), 8 vom: 11. Juli, Seite 1007-1012
Übergeordnetes Werk:	volume:36 ; year:2007 ; number:8 ; day:11 ; month:07 ; pages:1007-1012

Links:	Volltext

DOI / URN:	10.1007/s11664-007-0163-z

Katalog-ID:	SPR021482446

Internformat


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520			\|a The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe.
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912			\|a GBV_ILN_281
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912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
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912			\|a GBV_ILN_2004
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912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
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matchkey_str	article:1543186X:2007----::oprnipnerthnohct
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publishDate	2007
allfields	10.1007/s11664-007-0163-z doi (DE-627)SPR021482446 (SPR)s11664-007-0163-z-e DE-627 ger DE-627 rakwb eng Stoltz, A.J. verfasserin aut Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213 Varesi, J.B. aut Benson, J.D. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2007), 8 vom: 11. Juli, Seite 1007-1012 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012 https://dx.doi.org/10.1007/s11664-007-0163-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2007 8 11 07 1007-1012
spelling	10.1007/s11664-007-0163-z doi (DE-627)SPR021482446 (SPR)s11664-007-0163-z-e DE-627 ger DE-627 rakwb eng Stoltz, A.J. verfasserin aut Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213 Varesi, J.B. aut Benson, J.D. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2007), 8 vom: 11. Juli, Seite 1007-1012 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012 https://dx.doi.org/10.1007/s11664-007-0163-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2007 8 11 07 1007-1012
allfields_unstemmed	10.1007/s11664-007-0163-z doi (DE-627)SPR021482446 (SPR)s11664-007-0163-z-e DE-627 ger DE-627 rakwb eng Stoltz, A.J. verfasserin aut Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213 Varesi, J.B. aut Benson, J.D. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2007), 8 vom: 11. Juli, Seite 1007-1012 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012 https://dx.doi.org/10.1007/s11664-007-0163-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2007 8 11 07 1007-1012
allfieldsGer	10.1007/s11664-007-0163-z doi (DE-627)SPR021482446 (SPR)s11664-007-0163-z-e DE-627 ger DE-627 rakwb eng Stoltz, A.J. verfasserin aut Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213 Varesi, J.B. aut Benson, J.D. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2007), 8 vom: 11. Juli, Seite 1007-1012 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012 https://dx.doi.org/10.1007/s11664-007-0163-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2007 8 11 07 1007-1012
allfieldsSound	10.1007/s11664-007-0163-z doi (DE-627)SPR021482446 (SPR)s11664-007-0163-z-e DE-627 ger DE-627 rakwb eng Stoltz, A.J. verfasserin aut Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213 Varesi, J.B. aut Benson, J.D. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 36(2007), 8 vom: 11. Juli, Seite 1007-1012 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012 https://dx.doi.org/10.1007/s11664-007-0163-z lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 36 2007 8 11 07 1007-1012
language	English
source	Enthalten in Journal of electronic materials 36(2007), 8 vom: 11. Juli, Seite 1007-1012 volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012
sourceStr	Enthalten in Journal of electronic materials 36(2007), 8 vom: 11. Juli, Seite 1007-1012 volume:36 year:2007 number:8 day:11 month:07 pages:1007-1012
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Inductively coupled plasma (ICP) electron cyclotron resonance (ECR) mercury cadmium telluride (HgCdTe) cadmium telluride (CdTe) plasma
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Stoltz, A.J. @@aut@@ Varesi, J.B. @@aut@@ Benson, J.D. @@aut@@
publishDateDaySort_date	2007-07-11T00:00:00Z
hierarchy_top_id	324918739
id	SPR021482446
language_de	englisch
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author	Stoltz, A.J.
spellingShingle	Stoltz, A.J. misc Inductively coupled plasma (ICP) misc electron cyclotron resonance (ECR) misc mercury cadmium telluride (HgCdTe) misc cadmium telluride (CdTe) misc plasma Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
authorStr	Stoltz, A.J.
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topic_title	Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe Inductively coupled plasma (ICP) (dpeaa)DE-He213 electron cyclotron resonance (ECR) (dpeaa)DE-He213 mercury cadmium telluride (HgCdTe) (dpeaa)DE-He213 cadmium telluride (CdTe) (dpeaa)DE-He213 plasma (dpeaa)DE-He213
topic	misc Inductively coupled plasma (ICP) misc electron cyclotron resonance (ECR) misc mercury cadmium telluride (HgCdTe) misc cadmium telluride (CdTe) misc plasma
topic_unstemmed	misc Inductively coupled plasma (ICP) misc electron cyclotron resonance (ECR) misc mercury cadmium telluride (HgCdTe) misc cadmium telluride (CdTe) misc plasma
topic_browse	misc Inductively coupled plasma (ICP) misc electron cyclotron resonance (ECR) misc mercury cadmium telluride (HgCdTe) misc cadmium telluride (CdTe) misc plasma
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
ctrlnum	(DE-627)SPR021482446 (SPR)s11664-007-0163-z-e
title_full	Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
author_sort	Stoltz, A.J.
journal	Journal of electronic materials
journalStr	Journal of electronic materials
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container_start_page	1007
author_browse	Stoltz, A.J. Varesi, J.B. Benson, J.D.
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author-letter	Stoltz, A.J.
doi_str_mv	10.1007/s11664-007-0163-z
title_sort	comparing icp and ecr etching of hgcdte, cdznte, and cdte
title_auth	Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
abstract	The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. © TMS 2007
abstractGer	The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. © TMS 2007
abstract_unstemmed	The surface roughness of inductively coupled plasma (ICP)-etched CdTe is greater than that of electron cyclotron resonance (ECR)-etched CdTe. This greater roughness is undesirable for further processing of the material. Lower-frequency plasma excitation from the ICP is more efficient at cracking hydrogen than the high-frequency plasma excitation of ECR. In binary semiconductors it is important to balance removal of both constituents. Bombardment controls the removal of the metal constituent while hydrogen removes the tellurium. Research performed with ECR plasma processing on HgCdTe shows that reducing the pressure can greatly reduce hydrogen ionization. Applying this to ICP it can be shown that reduced pressure greatly improves the morphology of CdTe. This balanced etching also greatly improves etch rate and selectivity of HgCdTe. © TMS 2007
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title_short	Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe
url	https://dx.doi.org/10.1007/s11664-007-0163-z
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author2	Varesi, J.B. Benson, J.D.
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doi_str	10.1007/s11664-007-0163-z
up_date	2024-07-03T22:49:49.262Z
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Comparing ICP and ECR Etching of HgCdTe, CdZnTe, and CdTe

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