Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N

Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unl...
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Autor*in:	Miller, M.A. [verfasserIn] Koo, B.H. Bogart, K.H.A. Mohney, S.E.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	AlGaN ohmic contact plasma etching vanadium

Anmerkung:	© TMS 2007

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 37(2007), 5 vom: 28. Sept., Seite 564-568
Übergeordnetes Werk:	volume:37 ; year:2007 ; number:5 ; day:28 ; month:09 ; pages:564-568

Links:	Volltext

DOI / URN:	10.1007/s11664-007-0300-8

Katalog-ID:	SPR021484252

Internformat


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912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
912			\|a GBV_ILN_2119
912			\|a GBV_ILN_2122
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912			\|a GBV_ILN_4037
912			\|a GBV_ILN_4046
912			\|a GBV_ILN_4112
912			\|a GBV_ILN_4125
912			\|a GBV_ILN_4242
912			\|a GBV_ILN_4246
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912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
912			\|a GBV_ILN_4338
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matchkey_str	article:1543186X:2007----::iliunvlacnattpamece
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publishDate	2007
allfields	10.1007/s11664-007-0300-8 doi (DE-627)SPR021484252 (SPR)s11664-007-0300-8-e DE-627 ger DE-627 rakwb eng Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213 Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://dx.doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 28 09 564-568
spelling	10.1007/s11664-007-0300-8 doi (DE-627)SPR021484252 (SPR)s11664-007-0300-8-e DE-627 ger DE-627 rakwb eng Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213 Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://dx.doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 28 09 564-568
allfields_unstemmed	10.1007/s11664-007-0300-8 doi (DE-627)SPR021484252 (SPR)s11664-007-0300-8-e DE-627 ger DE-627 rakwb eng Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213 Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://dx.doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 28 09 564-568
allfieldsGer	10.1007/s11664-007-0300-8 doi (DE-627)SPR021484252 (SPR)s11664-007-0300-8-e DE-627 ger DE-627 rakwb eng Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213 Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://dx.doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 28 09 564-568
allfieldsSound	10.1007/s11664-007-0300-8 doi (DE-627)SPR021484252 (SPR)s11664-007-0300-8-e DE-627 ger DE-627 rakwb eng Miller, M.A. verfasserin aut Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213 Koo, B.H. aut Bogart, K.H.A. aut Mohney, S.E. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 28. Sept., Seite 564-568 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:28 month:09 pages:564-568 https://dx.doi.org/10.1007/s11664-007-0300-8 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 28 09 564-568
language	English
source	Enthalten in Journal of electronic materials 37(2007), 5 vom: 28. Sept., Seite 564-568 volume:37 year:2007 number:5 day:28 month:09 pages:564-568
sourceStr	Enthalten in Journal of electronic materials 37(2007), 5 vom: 28. Sept., Seite 564-568 volume:37 year:2007 number:5 day:28 month:09 pages:564-568
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	AlGaN ohmic contact plasma etching vanadium
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Miller, M.A. @@aut@@ Koo, B.H. @@aut@@ Bogart, K.H.A. @@aut@@ Mohney, S.E. @@aut@@
publishDateDaySort_date	2007-09-28T00:00:00Z
hierarchy_top_id	324918739
id	SPR021484252
language_de	englisch
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author	Miller, M.A.
spellingShingle	Miller, M.A. misc AlGaN misc ohmic contact misc plasma etching misc vanadium Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N
authorStr	Miller, M.A.
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topic_title	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N AlGaN (dpeaa)DE-He213 ohmic contact (dpeaa)DE-He213 plasma etching (dpeaa)DE-He213 vanadium (dpeaa)DE-He213
topic	misc AlGaN misc ohmic contact misc plasma etching misc vanadium
topic_unstemmed	misc AlGaN misc ohmic contact misc plasma etching misc vanadium
topic_browse	misc AlGaN misc ohmic contact misc plasma etching misc vanadium
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N
ctrlnum	(DE-627)SPR021484252 (SPR)s11664-007-0300-8-e
title_full	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N
author_sort	Miller, M.A.
journal	Journal of electronic materials
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container_start_page	564
author_browse	Miller, M.A. Koo, B.H. Bogart, K.H.A. Mohney, S.E.
container_volume	37
format_se	Elektronische Aufsätze
author-letter	Miller, M.A.
doi_str_mv	10.1007/s11664-007-0300-8
title_sort	ti/al/ti/au and v/al/v/au contacts to plasma-etched n-$ al_{0.58} %$ ga_{0.42} $n
title_auth	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N
abstract	Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007
abstractGer	Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007
abstract_unstemmed	Cross-sectional transmission electron microscopy was used to study annealed Ti/Al/Ti/Au and V/Al/V/Au ohmic contacts to as-received and plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N. The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. The similarity in phase formation in the contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N is likely the reason behind the similarity in specific contact resistances. © TMS 2007
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container_issue	5
title_short	Ti/Al/Ti/Au and V/Al/V/Au Contacts to Plasma-Etched n-$ Al_{0.58} %$ Ga_{0.42} $N
url	https://dx.doi.org/10.1007/s11664-007-0300-8
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author2	Koo, B.H. Bogart, K.H.A. Mohney, S.E.
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doi_str	10.1007/s11664-007-0300-8
up_date	2024-07-03T22:50:31.611Z
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The reaction depth of low-resistance V-based contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N is very limited, unlike previously reported Ti-based contacts to n-$ Al_{x} %$ Ga_{1−x} $N. In the present study, the Ti/Al/Ti/Au contacts to as-received n-$ Al_{0.58} %$ Ga_{0.42} $N required much higher annealing temperatures than the V-based contacts and also exhibited deeper reactions on the␣order of 40 nm. To achieve a low contact resistance on plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N, different metal layer thicknesses and processing conditions were required. The Ti- and V-based contacts to plasma-etched n-$ Al_{0.58} %$ Ga_{0.42} $N exhibited both similar contact resistances and limited reaction depths, along with the presence of an aluminum nitride layer at the metallization/semiconductor interface. Metal channels penetrate the aluminum nitride layer connecting the top of the metallization to the n-$ Al_{0.58} %$ Ga_{0.42} $N. 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