Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak sho...
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Autor*in:	VanMil, B.L. [verfasserIn] Lew, K.K. Myers-Ward, R.L. Eddy, C.R. Gaskill, D.K.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2007

Schlagwörter:	Mass spectrometry monitoring SiC C/Si ratio

Anmerkung:	© TMS 2007

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 37(2007), 5 vom: 09. Okt., Seite 685-690
Übergeordnetes Werk:	volume:37 ; year:2007 ; number:5 ; day:09 ; month:10 ; pages:685-690

Links:	Volltext

DOI / URN:	10.1007/s11664-007-0306-2

Katalog-ID:	SPR021484260

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520			\|a The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio.
650		4	\|a Mass spectrometry \|7 (dpeaa)DE-He213
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650		4	\|a SiC \|7 (dpeaa)DE-He213
650		4	\|a C/Si ratio \|7 (dpeaa)DE-He213
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allfields	10.1007/s11664-007-0306-2 doi (DE-627)SPR021484260 (SPR)s11664-007-0306-2-e DE-627 ger DE-627 rakwb eng VanMil, B.L. verfasserin aut Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213 Lew, K.K. aut Myers-Ward, R.L. aut Eddy, C.R. aut Gaskill, D.K. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 09. Okt., Seite 685-690 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:09 month:10 pages:685-690 https://dx.doi.org/10.1007/s11664-007-0306-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 09 10 685-690
spelling	10.1007/s11664-007-0306-2 doi (DE-627)SPR021484260 (SPR)s11664-007-0306-2-e DE-627 ger DE-627 rakwb eng VanMil, B.L. verfasserin aut Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213 Lew, K.K. aut Myers-Ward, R.L. aut Eddy, C.R. aut Gaskill, D.K. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 09. Okt., Seite 685-690 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:09 month:10 pages:685-690 https://dx.doi.org/10.1007/s11664-007-0306-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 09 10 685-690
allfields_unstemmed	10.1007/s11664-007-0306-2 doi (DE-627)SPR021484260 (SPR)s11664-007-0306-2-e DE-627 ger DE-627 rakwb eng VanMil, B.L. verfasserin aut Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213 Lew, K.K. aut Myers-Ward, R.L. aut Eddy, C.R. aut Gaskill, D.K. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 09. Okt., Seite 685-690 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:09 month:10 pages:685-690 https://dx.doi.org/10.1007/s11664-007-0306-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 09 10 685-690
allfieldsGer	10.1007/s11664-007-0306-2 doi (DE-627)SPR021484260 (SPR)s11664-007-0306-2-e DE-627 ger DE-627 rakwb eng VanMil, B.L. verfasserin aut Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213 Lew, K.K. aut Myers-Ward, R.L. aut Eddy, C.R. aut Gaskill, D.K. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 09. Okt., Seite 685-690 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:09 month:10 pages:685-690 https://dx.doi.org/10.1007/s11664-007-0306-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 09 10 685-690
allfieldsSound	10.1007/s11664-007-0306-2 doi (DE-627)SPR021484260 (SPR)s11664-007-0306-2-e DE-627 ger DE-627 rakwb eng VanMil, B.L. verfasserin aut Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC 2007 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2007 The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213 Lew, K.K. aut Myers-Ward, R.L. aut Eddy, C.R. aut Gaskill, D.K. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 37(2007), 5 vom: 09. Okt., Seite 685-690 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:37 year:2007 number:5 day:09 month:10 pages:685-690 https://dx.doi.org/10.1007/s11664-007-0306-2 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 37 2007 5 09 10 685-690
language	English
source	Enthalten in Journal of electronic materials 37(2007), 5 vom: 09. Okt., Seite 685-690 volume:37 year:2007 number:5 day:09 month:10 pages:685-690
sourceStr	Enthalten in Journal of electronic materials 37(2007), 5 vom: 09. Okt., Seite 685-690 volume:37 year:2007 number:5 day:09 month:10 pages:685-690
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Mass spectrometry monitoring SiC C/Si ratio
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	VanMil, B.L. @@aut@@ Lew, K.K. @@aut@@ Myers-Ward, R.L. @@aut@@ Eddy, C.R. @@aut@@ Gaskill, D.K. @@aut@@
publishDateDaySort_date	2007-10-09T00:00:00Z
hierarchy_top_id	324918739
id	SPR021484260
language_de	englisch
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author	VanMil, B.L.
spellingShingle	VanMil, B.L. misc Mass spectrometry misc monitoring misc SiC misc C/Si ratio Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
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topic_title	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC Mass spectrometry (dpeaa)DE-He213 monitoring (dpeaa)DE-He213 SiC (dpeaa)DE-He213 C/Si ratio (dpeaa)DE-He213
topic	misc Mass spectrometry misc monitoring misc SiC misc C/Si ratio
topic_unstemmed	misc Mass spectrometry misc monitoring misc SiC misc C/Si ratio
topic_browse	misc Mass spectrometry misc monitoring misc SiC misc C/Si ratio
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title	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
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title_full	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
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author_browse	VanMil, B.L. Lew, K.K. Myers-Ward, R.L. Eddy, C.R. Gaskill, D.K.
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doi_str_mv	10.1007/s11664-007-0306-2
title_sort	real-time in situ tracking of gas-phase carbon-to-silicon ratio during hot-wall cvd growth of sic
title_auth	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
abstract	The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. © TMS 2007
abstractGer	The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. © TMS 2007
abstract_unstemmed	The carbon-to-silicon ratio influences the background doping level of silicon carbide grown by hot-wall chemical vapor deposition (HWCVD). A quadrupole mass spectrometer was used to measure the process composition in the exhaust stream of a HWCVD reactor. The 26 amu mass-to-charge acetylene peak showed the strongest dynamic response to intentional changes in the precursor partial pressure at growth temperature. Methane peaks showed a similar but weaker dynamic response. The acetylene peaks have a direct linear correlation to variations in the propane and silane precursors, and thus can be tracked to give real-time in situ measurement of changes in the C/Si ratio. © TMS 2007
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title_short	Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC
url	https://dx.doi.org/10.1007/s11664-007-0306-2
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Real-Time In Situ Tracking of Gas-Phase Carbon-to-Silicon Ratio During Hot-Wall CVD Growth of SiC

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