On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth st...
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Autor*in:	Civale, Yann [verfasserIn] Vastola, Guglielmo Nanver, Lis K. Mary-Joy, Rani Kim, Jae-Ryoung

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2009

Schlagwörter:	Aluminum doping aluminum-induced crystallization layer-exchange mechanisms low-temperature doping – diodes silicon crystal growth silicon epitaxy solid-phase epitaxy

Anmerkung:	© The Author(s) 2009

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 38(2009), 10 vom: 07. Juli, Seite 2052-2062
Übergeordnetes Werk:	volume:38 ; year:2009 ; number:10 ; day:07 ; month:07 ; pages:2052-2062

Links:	Volltext

DOI / URN:	10.1007/s11664-009-0877-1

Katalog-ID:	SPR021486263

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520			\|a Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate.
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650		4	\|a aluminum-induced crystallization \|7 (dpeaa)DE-He213
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650		4	\|a – \|7 (dpeaa)DE-He213
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650		4	\|a silicon epitaxy \|7 (dpeaa)DE-He213
650		4	\|a solid-phase epitaxy \|7 (dpeaa)DE-He213
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912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
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912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
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912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
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912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
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allfields	10.1007/s11664-009-0877-1 doi (DE-627)SPR021486263 (SPR)s11664-009-0877-1-e DE-627 ger DE-627 rakwb eng Civale, Yann verfasserin aut On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2009 Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213 Vastola, Guglielmo aut Nanver, Lis K. aut Mary-Joy, Rani aut Kim, Jae-Ryoung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 10 vom: 07. Juli, Seite 2052-2062 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062 https://dx.doi.org/10.1007/s11664-009-0877-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 10 07 07 2052-2062
spelling	10.1007/s11664-009-0877-1 doi (DE-627)SPR021486263 (SPR)s11664-009-0877-1-e DE-627 ger DE-627 rakwb eng Civale, Yann verfasserin aut On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2009 Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213 Vastola, Guglielmo aut Nanver, Lis K. aut Mary-Joy, Rani aut Kim, Jae-Ryoung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 10 vom: 07. Juli, Seite 2052-2062 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062 https://dx.doi.org/10.1007/s11664-009-0877-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 10 07 07 2052-2062
allfields_unstemmed	10.1007/s11664-009-0877-1 doi (DE-627)SPR021486263 (SPR)s11664-009-0877-1-e DE-627 ger DE-627 rakwb eng Civale, Yann verfasserin aut On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2009 Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213 Vastola, Guglielmo aut Nanver, Lis K. aut Mary-Joy, Rani aut Kim, Jae-Ryoung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 10 vom: 07. Juli, Seite 2052-2062 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062 https://dx.doi.org/10.1007/s11664-009-0877-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 10 07 07 2052-2062
allfieldsGer	10.1007/s11664-009-0877-1 doi (DE-627)SPR021486263 (SPR)s11664-009-0877-1-e DE-627 ger DE-627 rakwb eng Civale, Yann verfasserin aut On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2009 Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213 Vastola, Guglielmo aut Nanver, Lis K. aut Mary-Joy, Rani aut Kim, Jae-Ryoung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 10 vom: 07. Juli, Seite 2052-2062 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062 https://dx.doi.org/10.1007/s11664-009-0877-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 10 07 07 2052-2062
allfieldsSound	10.1007/s11664-009-0877-1 doi (DE-627)SPR021486263 (SPR)s11664-009-0877-1-e DE-627 ger DE-627 rakwb eng Civale, Yann verfasserin aut On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Author(s) 2009 Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213 Vastola, Guglielmo aut Nanver, Lis K. aut Mary-Joy, Rani aut Kim, Jae-Ryoung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 10 vom: 07. Juli, Seite 2052-2062 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062 https://dx.doi.org/10.1007/s11664-009-0877-1 kostenfrei Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 10 07 07 2052-2062
language	English
source	Enthalten in Journal of electronic materials 38(2009), 10 vom: 07. Juli, Seite 2052-2062 volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062
sourceStr	Enthalten in Journal of electronic materials 38(2009), 10 vom: 07. Juli, Seite 2052-2062 volume:38 year:2009 number:10 day:07 month:07 pages:2052-2062
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Aluminum doping aluminum-induced crystallization layer-exchange mechanisms low-temperature doping – diodes silicon crystal growth silicon epitaxy solid-phase epitaxy
isfreeaccess_bool	true
container_title	Journal of electronic materials
authorswithroles_txt_mv	Civale, Yann @@aut@@ Vastola, Guglielmo @@aut@@ Nanver, Lis K. @@aut@@ Mary-Joy, Rani @@aut@@ Kim, Jae-Ryoung @@aut@@
publishDateDaySort_date	2009-07-07T00:00:00Z
hierarchy_top_id	324918739
id	SPR021486263
language_de	englisch
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author	Civale, Yann
spellingShingle	Civale, Yann misc Aluminum doping misc aluminum-induced crystallization misc layer-exchange mechanisms misc low-temperature doping misc – misc diodes misc silicon crystal growth misc silicon epitaxy misc solid-phase epitaxy On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon
authorStr	Civale, Yann
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topic_title	On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon Aluminum doping (dpeaa)DE-He213 aluminum-induced crystallization (dpeaa)DE-He213 layer-exchange mechanisms (dpeaa)DE-He213 low-temperature doping (dpeaa)DE-He213 – (dpeaa)DE-He213 diodes (dpeaa)DE-He213 silicon crystal growth (dpeaa)DE-He213 silicon epitaxy (dpeaa)DE-He213 solid-phase epitaxy (dpeaa)DE-He213
topic	misc Aluminum doping misc aluminum-induced crystallization misc layer-exchange mechanisms misc low-temperature doping misc – misc diodes misc silicon crystal growth misc silicon epitaxy misc solid-phase epitaxy
topic_unstemmed	misc Aluminum doping misc aluminum-induced crystallization misc layer-exchange mechanisms misc low-temperature doping misc – misc diodes misc silicon crystal growth misc silicon epitaxy misc solid-phase epitaxy
topic_browse	misc Aluminum doping misc aluminum-induced crystallization misc layer-exchange mechanisms misc low-temperature doping misc – misc diodes misc silicon crystal growth misc silicon epitaxy misc solid-phase epitaxy
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon
ctrlnum	(DE-627)SPR021486263 (SPR)s11664-009-0877-1-e
title_full	On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon
author_sort	Civale, Yann
journal	Journal of electronic materials
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author_browse	Civale, Yann Vastola, Guglielmo Nanver, Lis K. Mary-Joy, Rani Kim, Jae-Ryoung
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author-letter	Civale, Yann
doi_str_mv	10.1007/s11664-009-0877-1
title_sort	on the mechanisms governing aluminum-mediated solid-phase epitaxy of silicon
title_auth	On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon
abstract	Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. © The Author(s) 2009
abstractGer	Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. © The Author(s) 2009
abstract_unstemmed	Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si substrates have been identified by studying the deposited material as a function of growth conditions when varying parameters such as temperature, growth time, and layer-stack properties. Early growth stages can be discerned as first formation of “free” Si at the Al/α-Si interface, then diffusion of Si along the Al grain boundaries, nucleation at the Si substrate surface, nuclei rearrangement, and finally crystal growth. The acquired understanding is applied to control the selectivity and completeness of single-crystal growth in various sizes of contact windows to the Si substrate. © The Author(s) 2009
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container_issue	10
title_short	On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon
url	https://dx.doi.org/10.1007/s11664-009-0877-1
remote_bool	true
author2	Vastola, Guglielmo Nanver, Lis K. Mary-Joy, Rani Kim, Jae-Ryoung
author2Str	Vastola, Guglielmo Nanver, Lis K. Mary-Joy, Rani Kim, Jae-Ryoung
ppnlink	324918739
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hochschulschrift_bool	false
doi_str	10.1007/s11664-009-0877-1
up_date	2024-07-03T22:51:18.082Z
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On the Mechanisms Governing Aluminum-Mediated Solid-Phase Epitaxy of Silicon

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