Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework
The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by anne...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Zhu, T. J. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2009 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2009 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 38(2009), 7 vom: 27. Jan., Seite 1068-1071 |
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| Übergeordnetes Werk: |
volume:38 ; year:2009 ; number:7 ; day:27 ; month:01 ; pages:1068-1071 |
| Links: |
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| DOI / URN: |
10.1007/s11664-009-0667-9 |
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| Katalog-ID: |
SPR021488606 |
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| 100 | 1 | |a Zhu, T. J. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
| 264 | 1 | |c 2009 | |
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| 520 | |a The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. | ||
| 650 | 4 | |a Thermoelectric materials |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a Zintl phases |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a thermoelectric properties |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a substitution |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Yu, C. |4 aut | |
| 700 | 1 | |a He, J. |4 aut | |
| 700 | 1 | |a Zhang, S. N. |4 aut | |
| 700 | 1 | |a Zhao, X. B. |4 aut | |
| 700 | 1 | |a Tritt, Terry M. |4 aut | |
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10.1007/s11664-009-0667-9 doi (DE-627)SPR021488606 (SPR)s11664-009-0667-9-e DE-627 ger DE-627 rakwb eng Zhu, T. J. verfasserin aut Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2009 The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 Yu, C. aut He, J. aut Zhang, S. N. aut Zhao, X. B. aut Tritt, Terry M. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 7 vom: 27. Jan., Seite 1068-1071 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:7 day:27 month:01 pages:1068-1071 https://dx.doi.org/10.1007/s11664-009-0667-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 7 27 01 1068-1071 |
| spelling |
10.1007/s11664-009-0667-9 doi (DE-627)SPR021488606 (SPR)s11664-009-0667-9-e DE-627 ger DE-627 rakwb eng Zhu, T. J. verfasserin aut Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2009 The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 Yu, C. aut He, J. aut Zhang, S. N. aut Zhao, X. B. aut Tritt, Terry M. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 7 vom: 27. Jan., Seite 1068-1071 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:7 day:27 month:01 pages:1068-1071 https://dx.doi.org/10.1007/s11664-009-0667-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 7 27 01 1068-1071 |
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10.1007/s11664-009-0667-9 doi (DE-627)SPR021488606 (SPR)s11664-009-0667-9-e DE-627 ger DE-627 rakwb eng Zhu, T. J. verfasserin aut Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2009 The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 Yu, C. aut He, J. aut Zhang, S. N. aut Zhao, X. B. aut Tritt, Terry M. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 7 vom: 27. Jan., Seite 1068-1071 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:7 day:27 month:01 pages:1068-1071 https://dx.doi.org/10.1007/s11664-009-0667-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 7 27 01 1068-1071 |
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10.1007/s11664-009-0667-9 doi (DE-627)SPR021488606 (SPR)s11664-009-0667-9-e DE-627 ger DE-627 rakwb eng Zhu, T. J. verfasserin aut Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2009 The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 Yu, C. aut He, J. aut Zhang, S. N. aut Zhao, X. B. aut Tritt, Terry M. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 7 vom: 27. Jan., Seite 1068-1071 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:7 day:27 month:01 pages:1068-1071 https://dx.doi.org/10.1007/s11664-009-0667-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 7 27 01 1068-1071 |
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10.1007/s11664-009-0667-9 doi (DE-627)SPR021488606 (SPR)s11664-009-0667-9-e DE-627 ger DE-627 rakwb eng Zhu, T. J. verfasserin aut Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework 2009 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2009 The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 Yu, C. aut He, J. aut Zhang, S. N. aut Zhao, X. B. aut Tritt, Terry M. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 38(2009), 7 vom: 27. Jan., Seite 1068-1071 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:38 year:2009 number:7 day:27 month:01 pages:1068-1071 https://dx.doi.org/10.1007/s11664-009-0667-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 38 2009 7 27 01 1068-1071 |
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Zhu, T. J. @@aut@@ Yu, C. @@aut@@ He, J. @@aut@@ Zhang, S. N. @@aut@@ Zhao, X. B. @@aut@@ Tritt, Terry M. @@aut@@ |
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| author |
Zhu, T. J. |
| spellingShingle |
Zhu, T. J. misc Thermoelectric materials misc Zintl phases misc thermoelectric properties misc substitution Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
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Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework Thermoelectric materials (dpeaa)DE-He213 Zintl phases (dpeaa)DE-He213 thermoelectric properties (dpeaa)DE-He213 substitution (dpeaa)DE-He213 |
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misc Thermoelectric materials misc Zintl phases misc thermoelectric properties misc substitution |
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misc Thermoelectric materials misc Zintl phases misc thermoelectric properties misc substitution |
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misc Thermoelectric materials misc Zintl phases misc thermoelectric properties misc substitution |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
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(DE-627)SPR021488606 (SPR)s11664-009-0667-9-e |
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Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
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Zhu, T. J. |
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Journal of electronic materials |
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Journal of electronic materials |
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2009 |
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Zhu, T. J. Yu, C. He, J. Zhang, S. N. Zhao, X. B. Tritt, Terry M. |
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38 |
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Elektronische Aufsätze |
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Zhu, T. J. |
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10.1007/s11664-009-0667-9 |
| title_sort |
thermoelectric properties of zintl compound $ ybzn_{2} %$ sb_{2} $ with mn substitution in anionic framework |
| title_auth |
Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
| abstract |
The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. © TMS 2009 |
| abstractGer |
The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. © TMS 2009 |
| abstract_unstemmed |
The thermoelectric properties of the Zintl compound $ YbZn_{2} %$ Sb_{2} $ with isoelectronic substitution of Zn by Mn in the anionic ($ Zn_{2} %$ Sb_{2} $)2− framework have been studied. The p-type $ YbZn_{2−x} %$ Mn_{x} %$ Sb_{2} $ (0.0 ≤ x ≤ 0.4) samples were prepared via melting followed by annealing and hot-pressing. Thermoelectric property measurement showed that the Mn substitution effectively lowered the thermal conductivity for all the samples, while it significantly increased the Seebeck coefficient for x < 0.2. As a result, a dimensionless figure of merit ZT of approximately 0.61 to 0.65 was attained at 726 K for x = 0.05 to 0.15, compared with the ZT of ~0.48 in the unsubstituted $ YbZn_{2} %$ Sb_{2} $. © TMS 2009 |
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Thermoelectric Properties of Zintl Compound $ YbZn_{2} %$ Sb_{2} $ with Mn Substitution in Anionic Framework |
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https://dx.doi.org/10.1007/s11664-009-0667-9 |
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Yu, C. He, J. Zhang, S. N. Zhao, X. B. Tritt, Terry M. |
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10.1007/s11664-009-0667-9 |
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2024-07-03T22:52:09.266Z |
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| score |
7.3998547 |