$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure
Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measu...
Ausführliche Beschreibung
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| Autor*in: |
Ristova, M. M. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 41(2012), 11 vom: 06. Sept., Seite 3087-3094 |
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| Übergeordnetes Werk: |
volume:41 ; year:2012 ; number:11 ; day:06 ; month:09 ; pages:3087-3094 |
| Links: |
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| DOI / URN: |
10.1007/s11664-012-2221-4 |
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| Katalog-ID: |
SPR021500266 |
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| 100 | 1 | |a Ristova, M. M. |e verfasserin |4 aut | |
| 245 | 1 | 0 | |a $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
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| 520 | |a Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. | ||
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| 650 | 4 | |a filtered cathodic arc evaporation (FCAE) |7 (dpeaa)DE-He213 | |
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| 650 | 4 | |a AXRD |7 (dpeaa)DE-He213 | |
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| 700 | 1 | |a Gligorova, A. |4 aut | |
| 700 | 1 | |a Nasov, I. |4 aut | |
| 700 | 1 | |a Gracin, D. |4 aut | |
| 700 | 1 | |a Milun, M. |4 aut | |
| 700 | 1 | |a Kostadinova-Boskova, H. |4 aut | |
| 700 | 1 | |a Popeski-Dimovski, R. |4 aut | |
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10.1007/s11664-012-2221-4 doi (DE-627)SPR021500266 (SPR)s11664-012-2221-4-e DE-627 ger DE-627 rakwb eng Ristova, M. M. verfasserin aut $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 XPS (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 Gligorova, A. aut Nasov, I. aut Gracin, D. aut Milun, M. aut Kostadinova-Boskova, H. aut Popeski-Dimovski, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2012), 11 vom: 06. Sept., Seite 3087-3094 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 https://dx.doi.org/10.1007/s11664-012-2221-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2012 11 06 09 3087-3094 |
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10.1007/s11664-012-2221-4 doi (DE-627)SPR021500266 (SPR)s11664-012-2221-4-e DE-627 ger DE-627 rakwb eng Ristova, M. M. verfasserin aut $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 XPS (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 Gligorova, A. aut Nasov, I. aut Gracin, D. aut Milun, M. aut Kostadinova-Boskova, H. aut Popeski-Dimovski, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2012), 11 vom: 06. Sept., Seite 3087-3094 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 https://dx.doi.org/10.1007/s11664-012-2221-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2012 11 06 09 3087-3094 |
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10.1007/s11664-012-2221-4 doi (DE-627)SPR021500266 (SPR)s11664-012-2221-4-e DE-627 ger DE-627 rakwb eng Ristova, M. M. verfasserin aut $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 XPS (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 Gligorova, A. aut Nasov, I. aut Gracin, D. aut Milun, M. aut Kostadinova-Boskova, H. aut Popeski-Dimovski, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2012), 11 vom: 06. Sept., Seite 3087-3094 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 https://dx.doi.org/10.1007/s11664-012-2221-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2012 11 06 09 3087-3094 |
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10.1007/s11664-012-2221-4 doi (DE-627)SPR021500266 (SPR)s11664-012-2221-4-e DE-627 ger DE-627 rakwb eng Ristova, M. M. verfasserin aut $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 XPS (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 Gligorova, A. aut Nasov, I. aut Gracin, D. aut Milun, M. aut Kostadinova-Boskova, H. aut Popeski-Dimovski, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2012), 11 vom: 06. Sept., Seite 3087-3094 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 https://dx.doi.org/10.1007/s11664-012-2221-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2012 11 06 09 3087-3094 |
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10.1007/s11664-012-2221-4 doi (DE-627)SPR021500266 (SPR)s11664-012-2221-4-e DE-627 ger DE-627 rakwb eng Ristova, M. M. verfasserin aut $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 XPS (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 Gligorova, A. aut Nasov, I. aut Gracin, D. aut Milun, M. aut Kostadinova-Boskova, H. aut Popeski-Dimovski, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2012), 11 vom: 06. Sept., Seite 3087-3094 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 https://dx.doi.org/10.1007/s11664-012-2221-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2012 11 06 09 3087-3094 |
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Enthalten in Journal of electronic materials 41(2012), 11 vom: 06. Sept., Seite 3087-3094 volume:41 year:2012 number:11 day:06 month:09 pages:3087-3094 |
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TiO thin-film coating AFM XPS filtered cathodic arc evaporation (FCAE) transmittance reflectance H radicals SEM AXRD XRR |
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Ristova, M. M. @@aut@@ Gligorova, A. @@aut@@ Nasov, I. @@aut@@ Gracin, D. @@aut@@ Milun, M. @@aut@@ Kostadinova-Boskova, H. @@aut@@ Popeski-Dimovski, R. @@aut@@ |
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<?xml version="1.0" encoding="UTF-8"?><collection xmlns="http://www.loc.gov/MARC21/slim"><record><leader>01000caa a22002652 4500</leader><controlfield tag="001">SPR021500266</controlfield><controlfield tag="003">DE-627</controlfield><controlfield tag="005">20230331054923.0</controlfield><controlfield tag="007">cr uuu---uuuuu</controlfield><controlfield tag="008">201006s2012 xx |||||o 00| ||eng c</controlfield><datafield tag="024" ind1="7" ind2=" "><subfield code="a">10.1007/s11664-012-2221-4</subfield><subfield code="2">doi</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(DE-627)SPR021500266</subfield></datafield><datafield tag="035" ind1=" " ind2=" "><subfield code="a">(SPR)s11664-012-2221-4-e</subfield></datafield><datafield tag="040" ind1=" " ind2=" "><subfield code="a">DE-627</subfield><subfield code="b">ger</subfield><subfield code="c">DE-627</subfield><subfield code="e">rakwb</subfield></datafield><datafield tag="041" ind1=" " ind2=" "><subfield code="a">eng</subfield></datafield><datafield tag="100" ind1="1" ind2=" "><subfield code="a">Ristova, M. M.</subfield><subfield code="e">verfasserin</subfield><subfield code="4">aut</subfield></datafield><datafield tag="245" ind1="1" ind2="0"><subfield code="a">$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure</subfield></datafield><datafield tag="264" ind1=" " ind2="1"><subfield code="c">2012</subfield></datafield><datafield tag="336" ind1=" " ind2=" "><subfield code="a">Text</subfield><subfield code="b">txt</subfield><subfield code="2">rdacontent</subfield></datafield><datafield tag="337" ind1=" " ind2=" "><subfield code="a">Computermedien</subfield><subfield code="b">c</subfield><subfield code="2">rdamedia</subfield></datafield><datafield tag="338" ind1=" " ind2=" "><subfield code="a">Online-Ressource</subfield><subfield code="b">cr</subfield><subfield code="2">rdacarrier</subfield></datafield><datafield tag="500" ind1=" " ind2=" "><subfield code="a">© TMS 2012</subfield></datafield><datafield tag="520" ind1=" " ind2=" "><subfield code="a">Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. 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| author |
Ristova, M. M. |
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Ristova, M. M. misc TiO misc thin-film coating misc AFM misc XPS misc filtered cathodic arc evaporation (FCAE) misc transmittance misc reflectance misc H misc radicals misc SEM misc AXRD misc XRR $ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
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$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure TiO (dpeaa)DE-He213 thin-film coating (dpeaa)DE-He213 AFM (dpeaa)DE-He213 XPS (dpeaa)DE-He213 filtered cathodic arc evaporation (FCAE) (dpeaa)DE-He213 transmittance (dpeaa)DE-He213 reflectance (dpeaa)DE-He213 H (dpeaa)DE-He213 radicals (dpeaa)DE-He213 SEM (dpeaa)DE-He213 AXRD (dpeaa)DE-He213 XRR (dpeaa)DE-He213 |
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misc TiO misc thin-film coating misc AFM misc XPS misc filtered cathodic arc evaporation (FCAE) misc transmittance misc reflectance misc H misc radicals misc SEM misc AXRD misc XRR |
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misc TiO misc thin-film coating misc AFM misc XPS misc filtered cathodic arc evaporation (FCAE) misc transmittance misc reflectance misc H misc radicals misc SEM misc AXRD misc XRR |
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misc TiO misc thin-film coating misc AFM misc XPS misc filtered cathodic arc evaporation (FCAE) misc transmittance misc reflectance misc H misc radicals misc SEM misc AXRD misc XRR |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
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(DE-627)SPR021500266 (SPR)s11664-012-2221-4-e |
| title_full |
$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
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Ristova, M. M. |
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Journal of electronic materials |
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Journal of electronic materials |
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2012 |
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Ristova, M. M. Gligorova, A. Nasov, I. Gracin, D. Milun, M. Kostadinova-Boskova, H. Popeski-Dimovski, R. |
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41 |
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Elektronische Aufsätze |
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Ristova, M. M. |
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10.1007/s11664-012-2221-4 |
| title_sort |
$ tio_{2} $ coating for $ sno_{2} $:f films produced by filtered cathodic arc evaporation for improved resistance to $ h^{+} $ radical exposure |
| title_auth |
$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
| abstract |
Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. © TMS 2012 |
| abstractGer |
Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. © TMS 2012 |
| abstract_unstemmed |
Abstract Titanium dioxide thin films were deposited by filtered cathodic arc evaporation (FCAE) from a Ti target in an oxygen atmosphere onto (a) fluorine-doped tin oxide substrates $ SnO_{2} $:F (FTO) and (b) glass microscope slides. The growth rate calculated from film thickness profilometry measurements was found to be approximately 0.8 nm/s. The films were highly transparent to visible light. x-Ray photoemission spectroscopy analysis of the Ti 2p electron binding- energy shift confirmed the presence of a $ TiO_{2} $ stoichiometric compound. The results for the root-mean-square (RMS) surface roughness of the films deposited onto FTO substrates evaluated by atomic force microscopy suggested nanostructured film surfaces. When exposed to hydrogen plasma, $ TiO_{2} $ films revealed insignificant changes in the optical spectra. The initial sheet resistance of the $ SnO_{2} $:F layer was 14 Ω/sq. The deposition of the top $ TiO_{2} $ layer (45 nm thick) over the FTO electrode resulted in an increase of the sheet resistance of 2 Ω/sq. In addition, the sheet resistance of the double-layer FTO/$ TiO_{2} $ transparent conductive oxide (TCO) electrode increased by 1 Ω/sq as a result of $ H^{+} $ plasma exposure. Regardless of the $ TiO_{2} $ film’s low conductivity, a thin protective layer could be coated onto FTO films (presumably 15 nm thick) due to their high transparency, offering high resistance to aggressive $ H^{+} $ plasma conditions. In this paper we show that ∼50-nm-thick $ TiO_{2} $ coating on FTO films provides sufficient protection against deterioration of transparency and conductivity due to hydrogen radical exposure. © TMS 2012 |
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$ TiO_{2} $ Coating for $ SnO_{2} $:F Films Produced by Filtered Cathodic Arc Evaporation for Improved Resistance to $ H^{+} $ Radical Exposure |
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https://dx.doi.org/10.1007/s11664-012-2221-4 |
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Gligorova, A. Nasov, I. Gracin, D. Milun, M. Kostadinova-Boskova, H. Popeski-Dimovski, R. |
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| score |
7.398425 |