High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heat...
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Autor*in:	Nipoti, R. [verfasserIn] Nath, A. Qadri, S.B. Tian, Y-L. Albonetti, C. Carnera, A. Rao, Mulpuri V.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2011

Schlagwörter:	Silicon carbide ion implantation doping post-implantation annealing electrical characterization

Anmerkung:	© TMS 2011

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 41(2011), 3 vom: 05. Nov., Seite 457-465
Übergeordnetes Werk:	volume:41 ; year:2011 ; number:3 ; day:05 ; month:11 ; pages:457-465

Links:	Volltext

DOI / URN:	10.1007/s11664-011-1794-7

Katalog-ID:	SPR021500983

Internformat


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520			\|a Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers.
650		4	\|a Silicon carbide \|7 (dpeaa)DE-He213
650		4	\|a ion implantation \|7 (dpeaa)DE-He213
650		4	\|a doping \|7 (dpeaa)DE-He213
650		4	\|a post-implantation annealing \|7 (dpeaa)DE-He213
650		4	\|a electrical characterization \|7 (dpeaa)DE-He213
700	1		\|a Nath, A. \|4 aut
700	1		\|a Qadri, S.B. \|4 aut
700	1		\|a Tian, Y-L. \|4 aut
700	1		\|a Albonetti, C. \|4 aut
700	1		\|a Carnera, A. \|4 aut
700	1		\|a Rao, Mulpuri V. \|4 aut
773	0	8	\|i Enthalten in \|t Journal of electronic materials \|d Warrendale, Pa : TMS, 1972 \|g 41(2011), 3 vom: 05. Nov., Seite 457-465 \|w (DE-627)324918739 \|w (DE-600)2032868-0 \|x 1543-186X \|7 nnns
773	1	8	\|g volume:41 \|g year:2011 \|g number:3 \|g day:05 \|g month:11 \|g pages:457-465
856	4	0	\|u https://dx.doi.org/10.1007/s11664-011-1794-7 \|z lizenzpflichtig \|3 Volltext
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912			\|a GBV_ILN_69
912			\|a GBV_ILN_70
912			\|a GBV_ILN_73
912			\|a GBV_ILN_74
912			\|a GBV_ILN_90
912			\|a GBV_ILN_95
912			\|a GBV_ILN_100
912			\|a GBV_ILN_105
912			\|a GBV_ILN_110
912			\|a GBV_ILN_120
912			\|a GBV_ILN_138
912			\|a GBV_ILN_150
912			\|a GBV_ILN_151
912			\|a GBV_ILN_152
912			\|a GBV_ILN_161
912			\|a GBV_ILN_170
912			\|a GBV_ILN_171
912			\|a GBV_ILN_187
912			\|a GBV_ILN_213
912			\|a GBV_ILN_224
912			\|a GBV_ILN_230
912			\|a GBV_ILN_250
912			\|a GBV_ILN_281
912			\|a GBV_ILN_285
912			\|a GBV_ILN_293
912			\|a GBV_ILN_370
912			\|a GBV_ILN_602
912			\|a GBV_ILN_636
912			\|a GBV_ILN_702
912			\|a GBV_ILN_2001
912			\|a GBV_ILN_2003
912			\|a GBV_ILN_2004
912			\|a GBV_ILN_2005
912			\|a GBV_ILN_2006
912			\|a GBV_ILN_2007
912			\|a GBV_ILN_2008
912			\|a GBV_ILN_2009
912			\|a GBV_ILN_2010
912			\|a GBV_ILN_2011
912			\|a GBV_ILN_2014
912			\|a GBV_ILN_2015
912			\|a GBV_ILN_2020
912			\|a GBV_ILN_2021
912			\|a GBV_ILN_2025
912			\|a GBV_ILN_2026
912			\|a GBV_ILN_2027
912			\|a GBV_ILN_2031
912			\|a GBV_ILN_2034
912			\|a GBV_ILN_2037
912			\|a GBV_ILN_2038
912			\|a GBV_ILN_2039
912			\|a GBV_ILN_2044
912			\|a GBV_ILN_2048
912			\|a GBV_ILN_2049
912			\|a GBV_ILN_2050
912			\|a GBV_ILN_2055
912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
912			\|a GBV_ILN_2061
912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
912			\|a GBV_ILN_2093
912			\|a GBV_ILN_2106
912			\|a GBV_ILN_2107
912			\|a GBV_ILN_2108
912			\|a GBV_ILN_2110
912			\|a GBV_ILN_2111
912			\|a GBV_ILN_2112
912			\|a GBV_ILN_2113
912			\|a GBV_ILN_2116
912			\|a GBV_ILN_2118
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912			\|a GBV_ILN_2122
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912			\|a GBV_ILN_2470
912			\|a GBV_ILN_2472
912			\|a GBV_ILN_2507
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912			\|a GBV_ILN_2548
912			\|a GBV_ILN_4035
912			\|a GBV_ILN_4037
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912			\|a GBV_ILN_4112
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912			\|a GBV_ILN_4249
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912			\|a GBV_ILN_4328
912			\|a GBV_ILN_4333
912			\|a GBV_ILN_4334
912			\|a GBV_ILN_4335
912			\|a GBV_ILN_4336
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952			\|d 41 \|j 2011 \|e 3 \|b 05 \|c 11 \|h 457-465

Indexfelder

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matchkey_str	article:1543186X:2011----::ihoehshrsmlne4scirwvadovninlotmlnainn
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publishDate	2011
allfields	10.1007/s11664-011-1794-7 doi (DE-627)SPR021500983 (SPR)s11664-011-1794-7-e DE-627 ger DE-627 rakwb eng Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://dx.doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2011 3 05 11 457-465
spelling	10.1007/s11664-011-1794-7 doi (DE-627)SPR021500983 (SPR)s11664-011-1794-7-e DE-627 ger DE-627 rakwb eng Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://dx.doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2011 3 05 11 457-465
allfields_unstemmed	10.1007/s11664-011-1794-7 doi (DE-627)SPR021500983 (SPR)s11664-011-1794-7-e DE-627 ger DE-627 rakwb eng Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://dx.doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2011 3 05 11 457-465
allfieldsGer	10.1007/s11664-011-1794-7 doi (DE-627)SPR021500983 (SPR)s11664-011-1794-7-e DE-627 ger DE-627 rakwb eng Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://dx.doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2011 3 05 11 457-465
allfieldsSound	10.1007/s11664-011-1794-7 doi (DE-627)SPR021500983 (SPR)s11664-011-1794-7-e DE-627 ger DE-627 rakwb eng Nipoti, R. verfasserin aut High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C 2011 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2011 Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Nath, A. aut Qadri, S.B. aut Tian, Y-L. aut Albonetti, C. aut Carnera, A. aut Rao, Mulpuri V. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 41(2011), 3 vom: 05. Nov., Seite 457-465 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:41 year:2011 number:3 day:05 month:11 pages:457-465 https://dx.doi.org/10.1007/s11664-011-1794-7 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 41 2011 3 05 11 457-465
language	English
source	Enthalten in Journal of electronic materials 41(2011), 3 vom: 05. Nov., Seite 457-465 volume:41 year:2011 number:3 day:05 month:11 pages:457-465
sourceStr	Enthalten in Journal of electronic materials 41(2011), 3 vom: 05. Nov., Seite 457-465 volume:41 year:2011 number:3 day:05 month:11 pages:457-465
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	Silicon carbide ion implantation doping post-implantation annealing electrical characterization
isfreeaccess_bool	false
container_title	Journal of electronic materials
authorswithroles_txt_mv	Nipoti, R. @@aut@@ Nath, A. @@aut@@ Qadri, S.B. @@aut@@ Tian, Y-L. @@aut@@ Albonetti, C. @@aut@@ Carnera, A. @@aut@@ Rao, Mulpuri V. @@aut@@
publishDateDaySort_date	2011-11-05T00:00:00Z
hierarchy_top_id	324918739
id	SPR021500983
language_de	englisch
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These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. 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author	Nipoti, R.
spellingShingle	Nipoti, R. misc Silicon carbide misc ion implantation misc doping misc post-implantation annealing misc electrical characterization High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
authorStr	Nipoti, R.
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topic_title	High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C Silicon carbide (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213
topic	misc Silicon carbide misc ion implantation misc doping misc post-implantation annealing misc electrical characterization
topic_unstemmed	misc Silicon carbide misc ion implantation misc doping misc post-implantation annealing misc electrical characterization
topic_browse	misc Silicon carbide misc ion implantation misc doping misc post-implantation annealing misc electrical characterization
format_facet	Elektronische Aufsätze Aufsätze Elektronische Ressource
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title	High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
ctrlnum	(DE-627)SPR021500983 (SPR)s11664-011-1794-7-e
title_full	High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
author_sort	Nipoti, R.
journal	Journal of electronic materials
journalStr	Journal of electronic materials
lang_code	eng
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container_start_page	457
author_browse	Nipoti, R. Nath, A. Qadri, S.B. Tian, Y-L. Albonetti, C. Carnera, A. Rao, Mulpuri V.
container_volume	41
format_se	Elektronische Aufsätze
author-letter	Nipoti, R.
doi_str_mv	10.1007/s11664-011-1794-7
title_sort	high-dose phosphorus-implanted 4h-sic: microwave and conventional post-implantation annealing at temperatures ≥1700°c
title_auth	High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
abstract	Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011
abstractGer	Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011
abstract_unstemmed	Abstract Semi-insulating 4H-SiC ⟨0001⟩ wafers have been phosphorus ion implanted at 500°C to obtain phosphorus box depth profiles with dopant concentration from 5 × $ 10^{19} $ $ cm^{−3} $ to 8 × $ 10^{20} $ $ cm^{−3} $. These samples have been annealed by microwave and conventional inductively heated systems in the temperature range 1700°C to 2050°C. Resistivity, Hall electron density, and Hall mobility of the phosphorus-implanted and annealed 4H-SiC layers have been measured in the temperature range from room temperature to 450°C. The high-resolution x-ray diffraction and rocking curve of both virgin and processed 4H-SiC samples have been analyzed to obtain the sample crystal quality up to about 3 μm depth from the wafer surface. For both increasing implanted phosphorus concentration and increasing post-implantation annealing temperature the implanted material resistivity decreases to an asymptotic value of about 1.5 × $ 10^{−3} $ Ω cm. Increasing the implanted phosphorus concentration and post-implantation annealing temperature beyond 4 × $ 10^{20} $ $ cm^{−3} $ and 2000°C, respectively, does not bring any apparent benefit with respect to the minimum obtainable resistivity. Sheet resistance and sheet electron density increase with increasing measurement temperature. Electron density saturates at 1.5 × $ 10^{20} $ $ cm^{−3} $ for implanted phosphorus plateau values ≥4 × $ 10^{20} $ $ cm^{−3} $, irrespective of the post-implantation annealing method. Implantation produces an increase of the lattice parameter in the bulk 4H-SiC underneath the phosphorus-implanted layer. Microwave and conventional annealing produce a further increase of the lattice parameter in such a depth region and an equivalent recovered lattice in the phosphorus-implanted layers. © TMS 2011
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container_issue	3
title_short	High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C
url	https://dx.doi.org/10.1007/s11664-011-1794-7
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author2	Nath, A. Qadri, S.B. Tian, Y-L. Albonetti, C. Carnera, A. Rao, Mulpuri V.
author2Str	Nath, A. Qadri, S.B. Tian, Y-L. Albonetti, C. Carnera, A. Rao, Mulpuri V.
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doi_str	10.1007/s11664-011-1794-7
up_date	2024-07-03T22:56:46.263Z
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High-Dose Phosphorus-Implanted 4H-SiC: Microwave and Conventional Post-Implantation Annealing at Temperatures ≥1700°C

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