Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decrea...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Park, Kwan-Ho [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2012 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2012 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 42(2012), 7 vom: 28. Sept., Seite 1377-1381 |
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| Übergeordnetes Werk: |
volume:42 ; year:2012 ; number:7 ; day:28 ; month:09 ; pages:1377-1381 |
| Links: |
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| DOI / URN: |
10.1007/s11664-012-2253-9 |
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| Katalog-ID: |
SPR021507740 |
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| 100 | 1 | |a Park, Kwan-Ho |e verfasserin |4 aut | |
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| 520 | |a Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. | ||
| 650 | 4 | |a Thermoelectric |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a skutterudite |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a ytterbium filling |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a charge compensation |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Kim, Il-Ho |4 aut | |
| 700 | 1 | |a Choi, Soon-Mok |4 aut | |
| 700 | 1 | |a Seo, Won-Seon |4 aut | |
| 700 | 1 | |a Cheong, Dong-Ik |4 aut | |
| 700 | 1 | |a Kang, Hyung |4 aut | |
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| 856 | 4 | 0 | |u https://dx.doi.org/10.1007/s11664-012-2253-9 |z lizenzpflichtig |3 Volltext |
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10.1007/s11664-012-2253-9 doi (DE-627)SPR021507740 (SPR)s11664-012-2253-9-e DE-627 ger DE-627 rakwb eng Park, Kwan-Ho verfasserin aut Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Kim, Il-Ho aut Choi, Soon-Mok aut Seo, Won-Seon aut Cheong, Dong-Ik aut Kang, Hyung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 42(2012), 7 vom: 28. Sept., Seite 1377-1381 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 https://dx.doi.org/10.1007/s11664-012-2253-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2012 7 28 09 1377-1381 |
| spelling |
10.1007/s11664-012-2253-9 doi (DE-627)SPR021507740 (SPR)s11664-012-2253-9-e DE-627 ger DE-627 rakwb eng Park, Kwan-Ho verfasserin aut Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Kim, Il-Ho aut Choi, Soon-Mok aut Seo, Won-Seon aut Cheong, Dong-Ik aut Kang, Hyung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 42(2012), 7 vom: 28. Sept., Seite 1377-1381 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 https://dx.doi.org/10.1007/s11664-012-2253-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2012 7 28 09 1377-1381 |
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10.1007/s11664-012-2253-9 doi (DE-627)SPR021507740 (SPR)s11664-012-2253-9-e DE-627 ger DE-627 rakwb eng Park, Kwan-Ho verfasserin aut Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Kim, Il-Ho aut Choi, Soon-Mok aut Seo, Won-Seon aut Cheong, Dong-Ik aut Kang, Hyung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 42(2012), 7 vom: 28. Sept., Seite 1377-1381 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 https://dx.doi.org/10.1007/s11664-012-2253-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2012 7 28 09 1377-1381 |
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10.1007/s11664-012-2253-9 doi (DE-627)SPR021507740 (SPR)s11664-012-2253-9-e DE-627 ger DE-627 rakwb eng Park, Kwan-Ho verfasserin aut Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Kim, Il-Ho aut Choi, Soon-Mok aut Seo, Won-Seon aut Cheong, Dong-Ik aut Kang, Hyung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 42(2012), 7 vom: 28. Sept., Seite 1377-1381 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 https://dx.doi.org/10.1007/s11664-012-2253-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2012 7 28 09 1377-1381 |
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10.1007/s11664-012-2253-9 doi (DE-627)SPR021507740 (SPR)s11664-012-2253-9-e DE-627 ger DE-627 rakwb eng Park, Kwan-Ho verfasserin aut Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites 2012 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2012 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Kim, Il-Ho aut Choi, Soon-Mok aut Seo, Won-Seon aut Cheong, Dong-Ik aut Kang, Hyung aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 42(2012), 7 vom: 28. Sept., Seite 1377-1381 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 https://dx.doi.org/10.1007/s11664-012-2253-9 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 42 2012 7 28 09 1377-1381 |
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Enthalten in Journal of electronic materials 42(2012), 7 vom: 28. Sept., Seite 1377-1381 volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 |
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Enthalten in Journal of electronic materials 42(2012), 7 vom: 28. Sept., Seite 1377-1381 volume:42 year:2012 number:7 day:28 month:09 pages:1377-1381 |
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Thermoelectric skutterudite ytterbium filling charge compensation |
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Park, Kwan-Ho @@aut@@ Kim, Il-Ho @@aut@@ Choi, Soon-Mok @@aut@@ Seo, Won-Seon @@aut@@ Cheong, Dong-Ik @@aut@@ Kang, Hyung @@aut@@ |
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|
| author |
Park, Kwan-Ho |
| spellingShingle |
Park, Kwan-Ho misc Thermoelectric misc skutterudite misc ytterbium filling misc charge compensation Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites |
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Park, Kwan-Ho |
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Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 ytterbium filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 |
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misc Thermoelectric misc skutterudite misc ytterbium filling misc charge compensation |
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misc Thermoelectric misc skutterudite misc ytterbium filling misc charge compensation |
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misc Thermoelectric misc skutterudite misc ytterbium filling misc charge compensation |
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Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites |
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Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites |
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Park, Kwan-Ho |
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Journal of electronic materials |
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Journal of electronic materials |
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2012 |
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Park, Kwan-Ho Kim, Il-Ho Choi, Soon-Mok Seo, Won-Seon Cheong, Dong-Ik Kang, Hyung |
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42 |
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Elektronische Aufsätze |
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Park, Kwan-Ho |
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10.1007/s11664-012-2253-9 |
| title_sort |
preparation and thermoelectric properties of p-type yb-filled skutterudites |
| title_auth |
Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites |
| abstract |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. © TMS 2012 |
| abstractGer |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. © TMS 2012 |
| abstract_unstemmed |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Co_{x} %$ Sb_{12} $ skutterudites were prepared by encapsulated melting and hot pressing, and the filling and doping (charge compensation) effects on the transport and thermoelectric properties were examined. The electrical conductivity of all specimens decreased slightly with increasing temperature, indicating that they were in a degenerate state due to high carrier concentrations of $ 10^{20} $ $ cm^{−3} $ to $ 10^{21} $ $ cm^{−3} $. The Hall and Seebeck coefficients exhibited positive signs, indicating that the majority carriers are holes (p-type). The Seebeck coefficient increased with increasing temperature to maximum values of 100 μV/K to 150 μV/K at 823 K. The electrical and thermal conductivities were reduced by substitution of Co for Fe, which was responsible for the decreased carrier concentration. Overall, the Yb-filled Fe-rich skutterudites showed better thermoelectric performance than the Yb-filled Co-rich skutterudites. © TMS 2012 |
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| title_short |
Preparation and Thermoelectric Properties of p-Type Yb-Filled Skutterudites |
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https://dx.doi.org/10.1007/s11664-012-2253-9 |
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| author2 |
Kim, Il-Ho Choi, Soon-Mok Seo, Won-Seon Cheong, Dong-Ik Kang, Hyung |
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Kim, Il-Ho Choi, Soon-Mok Seo, Won-Seon Cheong, Dong-Ik Kang, Hyung |
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| doi_str |
10.1007/s11664-012-2253-9 |
| up_date |
2024-07-03T22:59:19.331Z |
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| score |
7.4004955 |