Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication
Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation anneali...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Nath, A. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 43(2014), 4 vom: 22. Jan., Seite 843-849 |
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| Übergeordnetes Werk: |
volume:43 ; year:2014 ; number:4 ; day:22 ; month:01 ; pages:843-849 |
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| DOI / URN: |
10.1007/s11664-013-2973-5 |
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| Katalog-ID: |
SPR021512868 |
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| 520 | |a Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. | ||
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| 650 | 4 | |a -type |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a ion implantation |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a doping |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a post-implantation annealing |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a - |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a - |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a diodes |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a electrical characterization |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Rao, Mulpuri V. |4 aut | |
| 700 | 1 | |a Tian, Y. -L. |4 aut | |
| 700 | 1 | |a Parisini, A. |4 aut | |
| 700 | 1 | |a Nipoti, R. |4 aut | |
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10.1007/s11664-013-2973-5 doi (DE-627)SPR021512868 (SPR)s11664-013-2973-5-e DE-627 ger DE-627 rakwb eng Nath, A. verfasserin aut Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2014 Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Rao, Mulpuri V. aut Tian, Y. -L. aut Parisini, A. aut Nipoti, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 4 vom: 22. Jan., Seite 843-849 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:4 day:22 month:01 pages:843-849 https://dx.doi.org/10.1007/s11664-013-2973-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 4 22 01 843-849 |
| spelling |
10.1007/s11664-013-2973-5 doi (DE-627)SPR021512868 (SPR)s11664-013-2973-5-e DE-627 ger DE-627 rakwb eng Nath, A. verfasserin aut Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2014 Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Rao, Mulpuri V. aut Tian, Y. -L. aut Parisini, A. aut Nipoti, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 4 vom: 22. Jan., Seite 843-849 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:4 day:22 month:01 pages:843-849 https://dx.doi.org/10.1007/s11664-013-2973-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 4 22 01 843-849 |
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10.1007/s11664-013-2973-5 doi (DE-627)SPR021512868 (SPR)s11664-013-2973-5-e DE-627 ger DE-627 rakwb eng Nath, A. verfasserin aut Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2014 Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Rao, Mulpuri V. aut Tian, Y. -L. aut Parisini, A. aut Nipoti, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 4 vom: 22. Jan., Seite 843-849 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:4 day:22 month:01 pages:843-849 https://dx.doi.org/10.1007/s11664-013-2973-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 4 22 01 843-849 |
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10.1007/s11664-013-2973-5 doi (DE-627)SPR021512868 (SPR)s11664-013-2973-5-e DE-627 ger DE-627 rakwb eng Nath, A. verfasserin aut Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2014 Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Rao, Mulpuri V. aut Tian, Y. -L. aut Parisini, A. aut Nipoti, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 4 vom: 22. Jan., Seite 843-849 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:4 day:22 month:01 pages:843-849 https://dx.doi.org/10.1007/s11664-013-2973-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 4 22 01 843-849 |
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10.1007/s11664-013-2973-5 doi (DE-627)SPR021512868 (SPR)s11664-013-2973-5-e DE-627 ger DE-627 rakwb eng Nath, A. verfasserin aut Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2014 Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 Rao, Mulpuri V. aut Tian, Y. -L. aut Parisini, A. aut Nipoti, R. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 4 vom: 22. Jan., Seite 843-849 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:4 day:22 month:01 pages:843-849 https://dx.doi.org/10.1007/s11664-013-2973-5 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 4 22 01 843-849 |
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Nath, A. @@aut@@ Rao, Mulpuri V. @@aut@@ Tian, Y. -L. @@aut@@ Parisini, A. @@aut@@ Nipoti, R. @@aut@@ |
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A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. 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| author |
Nath, A. |
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Nath, A. misc Silicon carbide misc -type misc ion implantation misc doping misc post-implantation annealing misc - misc diodes misc electrical characterization Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication |
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1543-186X |
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Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication Silicon carbide (dpeaa)DE-He213 -type (dpeaa)DE-He213 ion implantation (dpeaa)DE-He213 doping (dpeaa)DE-He213 post-implantation annealing (dpeaa)DE-He213 - (dpeaa)DE-He213 diodes (dpeaa)DE-He213 electrical characterization (dpeaa)DE-He213 |
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misc Silicon carbide misc -type misc ion implantation misc doping misc post-implantation annealing misc - misc diodes misc electrical characterization |
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misc Silicon carbide misc -type misc ion implantation misc doping misc post-implantation annealing misc - misc diodes misc electrical characterization |
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misc Silicon carbide misc -type misc ion implantation misc doping misc post-implantation annealing misc - misc diodes misc electrical characterization |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication |
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Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication |
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Nath, A. |
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Nath, A. Rao, Mulpuri V. Tian, Y. -L. Parisini, A. Nipoti, R. |
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43 |
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Elektronische Aufsätze |
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Nath, A. |
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10.1007/s11664-013-2973-5 |
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microwave annealing of high dose $ al^{+} $-implanted 4h-sic: towards device fabrication |
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Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication |
| abstract |
Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. © TMS 2014 |
| abstractGer |
Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. © TMS 2014 |
| abstract_unstemmed |
Abstract High-purity semi-insulating 8° off-axis 〈0001〉 4H-SiC was implanted with $ Al^{+} $ at different doses and energies to obtain a dopant concentration in the range of 5 × $ 10^{19} $–5 × $ 10^{20} $ $ cm^{−3} $. A custom-made microwave heating system was employed for post-implantation annealing at 2,000 °C for 30 s. Sheet resistance and Hall-effect measurements were performed in the temperature range of 150–700 K. At room temperature, for the highest Al concentration, a minimum resistivity of 3 × $ 10^{−2} $ Ω cm was obtained, whereas for the lowest Al concentration, the measured resistivity value was 4 × $ 10^{−1} $ Ω cm. The onset of impurity band conduction was observed at around room temperature for the samples implanted with Al concentrations ≥3 × $ 10^{20} $ $ cm^{−3} $. Vertical p+-i-n diodes whose anodes were made by 1.5 × $ 10^{20} $ $ cm^{−3} $ $ Al^{+} $ implantation and 2,000 °C/30 s microwave annealing showed exponential forward current–voltage characteristics with two different ideality factors under low current injection. A crossover point of the temperature coefficient of the diode resistance, from negative to positive values, was observed when the forward current entered the ohmic regime. © TMS 2014 |
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| container_issue |
4 |
| title_short |
Microwave Annealing of High Dose $ Al^{+} $-implanted 4H-SiC: Towards Device Fabrication |
| url |
https://dx.doi.org/10.1007/s11664-013-2973-5 |
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| author2 |
Rao, Mulpuri V. Tian, Y. -L. Parisini, A. Nipoti, R. |
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| doi_str |
10.1007/s11664-013-2973-5 |
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2024-07-03T23:01:13.009Z |
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| score |
7.399659 |