Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method
Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Li, Wen [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 43(2013), 6 vom: 18. Sept., Seite 1487-1491 |
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| Übergeordnetes Werk: |
volume:43 ; year:2013 ; number:6 ; day:18 ; month:09 ; pages:1487-1491 |
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| DOI / URN: |
10.1007/s11664-013-2744-3 |
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SPR021513686 |
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| 520 | |a Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. | ||
| 650 | 4 | |a MnSi |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a molten salt method |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a thermoelectric material |7 (dpeaa)DE-He213 | |
| 650 | 4 | |a interdiffusion coefficient |7 (dpeaa)DE-He213 | |
| 700 | 1 | |a Ishikawa, Daisuke |4 aut | |
| 700 | 1 | |a Hu, Junhua |4 aut | |
| 700 | 1 | |a Tatsuoka, Hirokazu |4 aut | |
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10.1007/s11664-013-2744-3 doi (DE-627)SPR021513686 (SPR)s11664-013-2744-3-e DE-627 ger DE-627 rakwb eng Li, Wen verfasserin aut Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 Ishikawa, Daisuke aut Hu, Junhua aut Tatsuoka, Hirokazu aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 18. Sept., Seite 1487-1491 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 https://dx.doi.org/10.1007/s11664-013-2744-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 18 09 1487-1491 |
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10.1007/s11664-013-2744-3 doi (DE-627)SPR021513686 (SPR)s11664-013-2744-3-e DE-627 ger DE-627 rakwb eng Li, Wen verfasserin aut Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 Ishikawa, Daisuke aut Hu, Junhua aut Tatsuoka, Hirokazu aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 18. Sept., Seite 1487-1491 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 https://dx.doi.org/10.1007/s11664-013-2744-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 18 09 1487-1491 |
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10.1007/s11664-013-2744-3 doi (DE-627)SPR021513686 (SPR)s11664-013-2744-3-e DE-627 ger DE-627 rakwb eng Li, Wen verfasserin aut Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 Ishikawa, Daisuke aut Hu, Junhua aut Tatsuoka, Hirokazu aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 18. Sept., Seite 1487-1491 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 https://dx.doi.org/10.1007/s11664-013-2744-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 18 09 1487-1491 |
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10.1007/s11664-013-2744-3 doi (DE-627)SPR021513686 (SPR)s11664-013-2744-3-e DE-627 ger DE-627 rakwb eng Li, Wen verfasserin aut Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 Ishikawa, Daisuke aut Hu, Junhua aut Tatsuoka, Hirokazu aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 18. Sept., Seite 1487-1491 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 https://dx.doi.org/10.1007/s11664-013-2744-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 18 09 1487-1491 |
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10.1007/s11664-013-2744-3 doi (DE-627)SPR021513686 (SPR)s11664-013-2744-3-e DE-627 ger DE-627 rakwb eng Li, Wen verfasserin aut Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 Ishikawa, Daisuke aut Hu, Junhua aut Tatsuoka, Hirokazu aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 18. Sept., Seite 1487-1491 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 https://dx.doi.org/10.1007/s11664-013-2744-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 18 09 1487-1491 |
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Enthalten in Journal of electronic materials 43(2013), 6 vom: 18. Sept., Seite 1487-1491 volume:43 year:2013 number:6 day:18 month:09 pages:1487-1491 |
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MnSi molten salt method thermoelectric material interdiffusion coefficient |
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Li, Wen @@aut@@ Ishikawa, Daisuke @@aut@@ Hu, Junhua @@aut@@ Tatsuoka, Hirokazu @@aut@@ |
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2013-09-18T00:00:00Z |
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It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. 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| author |
Li, Wen |
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Li, Wen misc MnSi misc molten salt method misc thermoelectric material misc interdiffusion coefficient Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method |
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Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method MnSi (dpeaa)DE-He213 molten salt method (dpeaa)DE-He213 thermoelectric material (dpeaa)DE-He213 interdiffusion coefficient (dpeaa)DE-He213 |
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misc MnSi misc molten salt method misc thermoelectric material misc interdiffusion coefficient |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method |
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(DE-627)SPR021513686 (SPR)s11664-013-2744-3-e |
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Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method |
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Li, Wen |
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Journal of electronic materials |
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2013 |
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Li, Wen Ishikawa, Daisuke Hu, Junhua Tatsuoka, Hirokazu |
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Li, Wen |
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10.1007/s11664-013-2744-3 |
| title_sort |
growth of $ mnsi_{1.7} $ layers on mnsi substrate by molten salt method |
| title_auth |
Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method |
| abstract |
Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. © TMS 2013 |
| abstractGer |
Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. © TMS 2013 |
| abstract_unstemmed |
Abstract $ MnSi_{1.7} $ layers have been successfully grown using a molten salt method. It was found that homogeneous $ MnSi_{1.7} $ layers with columnar domain structure can be grown on MnSi substrates. The dependence of the thickness and domain structure of the layers on the growth conditions was investigated. It was found that the deposited atoms, namely Si, were the dominant diffusion species, and the formation of Kirkendall voids was avoided for the silicidation reaction based on interdiffusion. The layer thickness could be controlled by the growth temperature and time, and was diffusion controlled. The interdiffusion coefficient was approximately 5 × $ 10^{−10} $ $ cm^{2} $/s for growth temperature of 900°C. The activation energy of interdiffusion was deduced to be approximately 1.1 eV for growth of the $ MnSi_{1.7} $ layers. This growth technique provides a simple and controllable method to grow large-area, high-quality $ MnSi_{1.7} $ layers. © TMS 2013 |
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Growth of $ MnSi_{1.7} $ Layers on MnSi Substrate by Molten Salt Method |
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https://dx.doi.org/10.1007/s11664-013-2744-3 |
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Ishikawa, Daisuke Hu, Junhua Tatsuoka, Hirokazu |
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2024-07-03T23:01:31.246Z |
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