A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been...
Ausführliche Beschreibung
Gespeichert in:
| Autor*in: |
Appel, O. [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2013 |
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| Schlagwörter: |
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| Anmerkung: |
© TMS 2013 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 43(2013), 6 vom: 07. Dez., Seite 1976-1982 |
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| Übergeordnetes Werk: |
volume:43 ; year:2013 ; number:6 ; day:07 ; month:12 ; pages:1976-1982 |
| Links: |
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| DOI / URN: |
10.1007/s11664-013-2930-3 |
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SPR02151447X |
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| 245 | 1 | 2 | |a A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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| 520 | |a Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. | ||
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10.1007/s11664-013-2930-3 doi (DE-627)SPR02151447X (SPR)s11664-013-2930-3-e DE-627 ger DE-627 rakwb eng Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 Gelbstein, Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://dx.doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)SPR02151447X (SPR)s11664-013-2930-3-e DE-627 ger DE-627 rakwb eng Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 Gelbstein, Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://dx.doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)SPR02151447X (SPR)s11664-013-2930-3-e DE-627 ger DE-627 rakwb eng Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 Gelbstein, Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://dx.doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)SPR02151447X (SPR)s11664-013-2930-3-e DE-627 ger DE-627 rakwb eng Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 Gelbstein, Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://dx.doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 07 12 1976-1982 |
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10.1007/s11664-013-2930-3 doi (DE-627)SPR02151447X (SPR)s11664-013-2930-3-e DE-627 ger DE-627 rakwb eng Appel, O. verfasserin aut A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy 2013 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS 2013 Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 Gelbstein, Y. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2013), 6 vom: 07. Dez., Seite 1976-1982 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 https://dx.doi.org/10.1007/s11664-013-2930-3 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2013 6 07 12 1976-1982 |
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Enthalten in Journal of electronic materials 43(2013), 6 vom: 07. Dez., Seite 1976-1982 volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 |
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Enthalten in Journal of electronic materials 43(2013), 6 vom: 07. Dez., Seite 1976-1982 volume:43 year:2013 number:6 day:07 month:12 pages:1976-1982 |
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Appel, O. @@aut@@ Gelbstein, Y. @@aut@@ |
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Appel, O. |
| spellingShingle |
Appel, O. misc Thermoelectric misc half-Heusler misc bismuth misc antimony A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy Thermoelectric (dpeaa)DE-He213 half-Heusler (dpeaa)DE-He213 bismuth (dpeaa)DE-He213 antimony (dpeaa)DE-He213 |
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misc Thermoelectric misc half-Heusler misc bismuth misc antimony |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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1976 |
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Appel, O. Gelbstein, Y. |
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Elektronische Aufsätze |
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Appel, O. |
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10.1007/s11664-013-2930-3 |
| title_sort |
comparison between the effects of sb and bi doping on the thermoelectric properties of the $ ti_{0.3} %$ zr_{0.35} %$ hf_{0.35} $nisn half-heusler alloy |
| title_auth |
A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
| abstract |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
| abstractGer |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
| abstract_unstemmed |
Abstract We deal here with Sb and Bi doping effects of the n-type half-Heusler (HH) $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn alloy on the measured thermoelectric properties. To date, the thermoelectric effects upon Bi doping on the Sn site of HH alloys have rarely been reported, while Sb has been widely used as a donor dopant. A comparison between the measured transport properties following arc melting and spark plasma sintering of both Bi- and Sb-doped samples indicates a much stronger doping effect upon Sb doping, an effect which was explained thermodynamically. Due to similar lattice thermal conductivity values obtained for the various doped samples, synthesized in a similar experimental route, no practical variations in the thermoelectric figure of merit values were observed between the various investigated samples, an effect which was attributed to compensation between the power factor and electrical thermal conductivity values regardless of the various investigated dopants and doping levels. © TMS 2013 |
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6 |
| title_short |
A Comparison Between the Effects of Sb and Bi Doping on the Thermoelectric Properties of the $ Ti_{0.3} %$ Zr_{0.35} %$ Hf_{0.35} $NiSn Half-Heusler Alloy |
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https://dx.doi.org/10.1007/s11664-013-2930-3 |
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Gelbstein, Y. |
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10.1007/s11664-013-2930-3 |
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2024-07-03T23:01:48.447Z |
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