A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds

HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination veloc...
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Autor*in:	Stoltz, A. J. [verfasserIn] Benson, J. D. Jaime-Vasquez, M. Smith, P. J. Almeida, L. A. Jacobs, R. Markunas, J. Brogden, K. Brown, A. Lennon, C. Maloney, P. Supola, N.

Format:	E-Artikel
Sprache:	Englisch

Erschienen:	2014

Schlagwörter:	HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR)

Anmerkung:	© TMS (outside the USA) 2014

Übergeordnetes Werk:	Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 43(2014), 9 vom: 11. Juli, Seite 3708-3717
Übergeordnetes Werk:	volume:43 ; year:2014 ; number:9 ; day:11 ; month:07 ; pages:3708-3717

Links:	Volltext

DOI / URN:	10.1007/s11664-014-3281-4

Katalog-ID:	SPR021517029

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245	1	2	\|a A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
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520			\|a HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds.
650		4	\|a HgCdTe \|7 (dpeaa)DE-He213
650		4	\|a CdTe \|7 (dpeaa)DE-He213
650		4	\|a CdZnTe \|7 (dpeaa)DE-He213
650		4	\|a Inductively coupled plasma (ICP) \|7 (dpeaa)DE-He213
650		4	\|a Electron cyclotron resonance (ECR) \|7 (dpeaa)DE-He213
700	1		\|a Benson, J. D. \|4 aut
700	1		\|a Jaime-Vasquez, M. \|4 aut
700	1		\|a Smith, P. J. \|4 aut
700	1		\|a Almeida, L. A. \|4 aut
700	1		\|a Jacobs, R. \|4 aut
700	1		\|a Markunas, J. \|4 aut
700	1		\|a Brogden, K. \|4 aut
700	1		\|a Brown, A. \|4 aut
700	1		\|a Lennon, C. \|4 aut
700	1		\|a Maloney, P. \|4 aut
700	1		\|a Supola, N. \|4 aut
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912			\|a GBV_ILN_2057
912			\|a GBV_ILN_2059
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912			\|a GBV_ILN_2064
912			\|a GBV_ILN_2065
912			\|a GBV_ILN_2068
912			\|a GBV_ILN_2070
912			\|a GBV_ILN_2086
912			\|a GBV_ILN_2088
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allfields	10.1007/s11664-014-3281-4 doi (DE-627)SPR021517029 (SPR)s11664-014-3281-4-e DE-627 ger DE-627 rakwb eng Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213 Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://dx.doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 9 11 07 3708-3717
spelling	10.1007/s11664-014-3281-4 doi (DE-627)SPR021517029 (SPR)s11664-014-3281-4-e DE-627 ger DE-627 rakwb eng Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213 Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://dx.doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 9 11 07 3708-3717
allfields_unstemmed	10.1007/s11664-014-3281-4 doi (DE-627)SPR021517029 (SPR)s11664-014-3281-4-e DE-627 ger DE-627 rakwb eng Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213 Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://dx.doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 9 11 07 3708-3717
allfieldsGer	10.1007/s11664-014-3281-4 doi (DE-627)SPR021517029 (SPR)s11664-014-3281-4-e DE-627 ger DE-627 rakwb eng Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213 Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://dx.doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 9 11 07 3708-3717
allfieldsSound	10.1007/s11664-014-3281-4 doi (DE-627)SPR021517029 (SPR)s11664-014-3281-4-e DE-627 ger DE-627 rakwb eng Stoltz, A. J. verfasserin aut A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © TMS (outside the USA) 2014 HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213 Benson, J. D. aut Jaime-Vasquez, M. aut Smith, P. J. aut Almeida, L. A. aut Jacobs, R. aut Markunas, J. aut Brogden, K. aut Brown, A. aut Lennon, C. aut Maloney, P. aut Supola, N. aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 43(2014), 9 vom: 11. Juli, Seite 3708-3717 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717 https://dx.doi.org/10.1007/s11664-014-3281-4 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 43 2014 9 11 07 3708-3717
language	English
source	Enthalten in Journal of electronic materials 43(2014), 9 vom: 11. Juli, Seite 3708-3717 volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717
sourceStr	Enthalten in Journal of electronic materials 43(2014), 9 vom: 11. Juli, Seite 3708-3717 volume:43 year:2014 number:9 day:11 month:07 pages:3708-3717
format_phy_str_mv	Article
institution	findex.gbv.de
topic_facet	HgCdTe CdTe CdZnTe Inductively coupled plasma (ICP) Electron cyclotron resonance (ECR)
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container_title	Journal of electronic materials
authorswithroles_txt_mv	Stoltz, A. J. @@aut@@ Benson, J. D. @@aut@@ Jaime-Vasquez, M. @@aut@@ Smith, P. J. @@aut@@ Almeida, L. A. @@aut@@ Jacobs, R. @@aut@@ Markunas, J. @@aut@@ Brogden, K. @@aut@@ Brown, A. @@aut@@ Lennon, C. @@aut@@ Maloney, P. @@aut@@ Supola, N. @@aut@@
publishDateDaySort_date	2014-07-11T00:00:00Z
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author	Stoltz, A. J.
spellingShingle	Stoltz, A. J. misc HgCdTe misc CdTe misc CdZnTe misc Inductively coupled plasma (ICP) misc Electron cyclotron resonance (ECR) A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
authorStr	Stoltz, A. J.
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topic_title	A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds HgCdTe (dpeaa)DE-He213 CdTe (dpeaa)DE-He213 CdZnTe (dpeaa)DE-He213 Inductively coupled plasma (ICP) (dpeaa)DE-He213 Electron cyclotron resonance (ECR) (dpeaa)DE-He213
topic	misc HgCdTe misc CdTe misc CdZnTe misc Inductively coupled plasma (ICP) misc Electron cyclotron resonance (ECR)
topic_unstemmed	misc HgCdTe misc CdTe misc CdZnTe misc Inductively coupled plasma (ICP) misc Electron cyclotron resonance (ECR)
topic_browse	misc HgCdTe misc CdTe misc CdZnTe misc Inductively coupled plasma (ICP) misc Electron cyclotron resonance (ECR)
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title	A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
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title_full	A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
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author-letter	Stoltz, A. J.
doi_str_mv	10.1007/s11664-014-3281-4
title_sort	review of the characterization techniques for the analysis of etch processed surfaces of hgcdte and related compounds
title_auth	A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
abstract	HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014
abstractGer	HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014
abstract_unstemmed	HgCdTe is the material system of choice for many infrared sensing applications. Growth of this material can often be challenging. However, processing of this material system can be equally as challenging. Incorrect processing can cause shunting, surface inversion, or high surface recombination velocities that can be detrimental. In order to produce an effective device in HgCdTe, one needs to understand what happens to the HgCdTe surface. Factors like the chemical termination of the HgCdTe surface, surface roughness, and surface reconstruction after a process is performed can dramatically affect the performance of devices made with HgCdTe. We will review different surface characterization techniques and how these techniques can be used conventionally and unconventionally, and how different processes can affect the surfaces of HgCdTe and related compounds. © TMS (outside the USA) 2014
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container_issue	9
title_short	A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds
url	https://dx.doi.org/10.1007/s11664-014-3281-4
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author2	Benson, J. D. Jaime-Vasquez, M. Smith, P. J. Almeida, L. A. Jacobs, R. Markunas, J. Brogden, K. Brown, A. Lennon, C. Maloney, P. Supola, N.
author2Str	Benson, J. D. Jaime-Vasquez, M. Smith, P. J. Almeida, L. A. Jacobs, R. Markunas, J. Brogden, K. Brown, A. Lennon, C. Maloney, P. Supola, N.
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doi_str	10.1007/s11664-014-3281-4
up_date	2024-07-03T23:02:45.936Z
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A Review of the Characterization Techniques for the Analysis of Etch Processed Surfaces of HgCdTe and Related Compounds

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