Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites
p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. Th...
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| Autor*in: |
Jeon, Bong-Jun [verfasserIn] |
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| Format: |
E-Artikel |
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| Sprache: |
Englisch |
| Erschienen: |
2014 |
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| Schlagwörter: |
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| Anmerkung: |
© The Minerals, Metals & Materials Society 2014 |
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| Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 44(2014), 6 vom: 28. Aug., Seite 1388-1393 |
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| Übergeordnetes Werk: |
volume:44 ; year:2014 ; number:6 ; day:28 ; month:08 ; pages:1388-1393 |
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| DOI / URN: |
10.1007/s11664-014-3369-x |
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| Katalog-ID: |
SPR021521565 |
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| 245 | 1 | 0 | |a Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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| 520 | |a p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. | ||
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| 700 | 1 | |a Shin, Dong-Kil |4 aut | |
| 700 | 1 | |a Kim, Il-Ho |4 aut | |
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10.1007/s11664-014-3369-x doi (DE-627)SPR021521565 (SPR)s11664-014-3369-x-e DE-627 ger DE-627 rakwb eng Jeon, Bong-Jun verfasserin aut Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 28. Aug., Seite 1388-1393 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 https://dx.doi.org/10.1007/s11664-014-3369-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 28 08 1388-1393 |
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10.1007/s11664-014-3369-x doi (DE-627)SPR021521565 (SPR)s11664-014-3369-x-e DE-627 ger DE-627 rakwb eng Jeon, Bong-Jun verfasserin aut Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 28. Aug., Seite 1388-1393 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 https://dx.doi.org/10.1007/s11664-014-3369-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 28 08 1388-1393 |
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10.1007/s11664-014-3369-x doi (DE-627)SPR021521565 (SPR)s11664-014-3369-x-e DE-627 ger DE-627 rakwb eng Jeon, Bong-Jun verfasserin aut Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 28. Aug., Seite 1388-1393 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 https://dx.doi.org/10.1007/s11664-014-3369-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 28 08 1388-1393 |
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10.1007/s11664-014-3369-x doi (DE-627)SPR021521565 (SPR)s11664-014-3369-x-e DE-627 ger DE-627 rakwb eng Jeon, Bong-Jun verfasserin aut Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 28. Aug., Seite 1388-1393 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 https://dx.doi.org/10.1007/s11664-014-3369-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 28 08 1388-1393 |
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10.1007/s11664-014-3369-x doi (DE-627)SPR021521565 (SPR)s11664-014-3369-x-e DE-627 ger DE-627 rakwb eng Jeon, Bong-Jun verfasserin aut Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 28. Aug., Seite 1388-1393 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 https://dx.doi.org/10.1007/s11664-014-3369-x lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 28 08 1388-1393 |
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Enthalten in Journal of electronic materials 44(2014), 6 vom: 28. Aug., Seite 1388-1393 volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 |
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Enthalten in Journal of electronic materials 44(2014), 6 vom: 28. Aug., Seite 1388-1393 volume:44 year:2014 number:6 day:28 month:08 pages:1388-1393 |
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Jeon, Bong-Jun @@aut@@ Shin, Dong-Kil @@aut@@ Kim, Il-Ho @@aut@@ |
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The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $.</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">Thermoelectric</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">skutterudite</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">double filling</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="650" ind1=" " ind2="4"><subfield code="a">charge compensation</subfield><subfield code="7">(dpeaa)DE-He213</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Shin, Dong-Kil</subfield><subfield code="4">aut</subfield></datafield><datafield tag="700" ind1="1" ind2=" "><subfield code="a">Kim, Il-Ho</subfield><subfield code="4">aut</subfield></datafield><datafield tag="773" ind1="0" ind2="8"><subfield code="i">Enthalten in</subfield><subfield code="t">Journal of electronic materials</subfield><subfield code="d">Warrendale, Pa : TMS, 1972</subfield><subfield code="g">44(2014), 6 vom: 28. 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|
| author |
Jeon, Bong-Jun |
| spellingShingle |
Jeon, Bong-Jun misc Thermoelectric misc skutterudite misc double filling misc charge compensation Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 double filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 |
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misc Thermoelectric misc skutterudite misc double filling misc charge compensation |
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misc Thermoelectric misc skutterudite misc double filling misc charge compensation |
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Elektronische Aufsätze Aufsätze Elektronische Ressource |
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Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Jeon, Bong-Jun |
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Jeon, Bong-Jun Shin, Dong-Kil Kim, Il-Ho |
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Elektronische Aufsätze |
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Jeon, Bong-Jun |
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10.1007/s11664-014-3369-x |
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synthesis and thermoelectric properties of $ ce_{1−z} %$ yb_{z} %$ fe_{4−x} %$ ni_{x} %$ sb_{12} $ skutterudites |
| title_auth |
Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
| abstract |
p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. © The Minerals, Metals & Materials Society 2014 |
| abstractGer |
p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. © The Minerals, Metals & Materials Society 2014 |
| abstract_unstemmed |
p-Type $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.25 ≤ z ≤ 0.75 and 0.25 ≤ x ≤ 0.5) skutterudites were prepared by encapsulated melting and hot pressing, and the effects of filling and substitution (charge compensation) on the transport and thermoelectric properties were examined. The single-phase skutterudite could be obtained by Ce/Yb filling, and substitution of Ni for Fe. However, a small amount of $ FeSb_{2} $ was formed for $ Ce_{0.25} %$ Yb_{0.75} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $. Carrier concentration and electrical conductivity were found to decrease with increasing filling fractions of Ce and substitution with Ni. The electrical conductivity of all samples decreased with increasing temperature, indicating that the $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were degenerate semiconductors. All specimens showed positive Seebeck coefficients and Hall coefficients, confirming p-type conduction. The Seebeck coefficient increased with increasing temperature, and Ce and Ni contents, with the highest value being observed at temperatures ranging from 723 K to 823 K. The maximum power factor was obtained for $ Ce_{0.75} %$ Yb_{0.25} %$ Fe_{3.75} %$ Ni_{0.25} %$ Sb_{12} $, with a peak value of 2.9 mW/$ mK^{2} $ at 723 K. The thermal conductivity increased at temperatures above 723 K, due to bipolar conduction. Though the lattice thermal conductivity increased with increasing filling fraction of Yb when the Ni content was x = 0.5, little difference was found regardless of the filling ratio of Ce/Yb when x = 0.25. However, the electronic thermal conductivity decreased with increasing Ce and Ni contents, resulting from the decrease in the carrier concentration. The dimensionless figure of merit (ZT) showed peak values at 723 K, due to the decrease in the Seebeck coefficient (or the power factor) and the increase in the thermal conductivity at high temperatures. The maximum ZT = 0.7 was achieved at 723 K for $ Ce_{0.5} %$ Yb_{0.5} %$ Fe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $. © The Minerals, Metals & Materials Society 2014 |
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6 |
| title_short |
Synthesis and Thermoelectric Properties of $ Ce_{1−z} %$ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
| url |
https://dx.doi.org/10.1007/s11664-014-3369-x |
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true |
| author2 |
Shin, Dong-Kil Kim, Il-Ho |
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Shin, Dong-Kil Kim, Il-Ho |
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| doi_str |
10.1007/s11664-014-3369-x |
| up_date |
2024-07-03T23:04:29.777Z |
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| score |
7.4012575 |