Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{...
Ausführliche Beschreibung
Autor*in: |
Lee, Woo-Man [verfasserIn] |
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Format: |
E-Artikel |
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Sprache: |
Englisch |
Erschienen: |
2014 |
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Schlagwörter: |
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Anmerkung: |
© The Minerals, Metals & Materials Society 2014 |
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Übergeordnetes Werk: |
Enthalten in: Journal of electronic materials - Warrendale, Pa : TMS, 1972, 44(2014), 6 vom: 13. Sept., Seite 1432-1437 |
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Übergeordnetes Werk: |
volume:44 ; year:2014 ; number:6 ; day:13 ; month:09 ; pages:1432-1437 |
Links: |
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DOI / URN: |
10.1007/s11664-014-3401-1 |
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Katalog-ID: |
SPR021521646 |
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245 | 1 | 0 | |a Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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520 | |a Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). | ||
650 | 4 | |a Thermoelectric |7 (dpeaa)DE-He213 | |
650 | 4 | |a skutterudite |7 (dpeaa)DE-He213 | |
650 | 4 | |a filling |7 (dpeaa)DE-He213 | |
650 | 4 | |a charge compensation |7 (dpeaa)DE-He213 | |
700 | 1 | |a Shin, Dong-Kil |4 aut | |
700 | 1 | |a Kim, Il-Ho |4 aut | |
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10.1007/s11664-014-3401-1 doi (DE-627)SPR021521646 (SPR)s11664-014-3401-1-e DE-627 ger DE-627 rakwb eng Lee, Woo-Man verfasserin aut Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 13. Sept., Seite 1432-1437 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 https://dx.doi.org/10.1007/s11664-014-3401-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 13 09 1432-1437 |
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10.1007/s11664-014-3401-1 doi (DE-627)SPR021521646 (SPR)s11664-014-3401-1-e DE-627 ger DE-627 rakwb eng Lee, Woo-Man verfasserin aut Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 13. Sept., Seite 1432-1437 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 https://dx.doi.org/10.1007/s11664-014-3401-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 13 09 1432-1437 |
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10.1007/s11664-014-3401-1 doi (DE-627)SPR021521646 (SPR)s11664-014-3401-1-e DE-627 ger DE-627 rakwb eng Lee, Woo-Man verfasserin aut Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 13. Sept., Seite 1432-1437 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 https://dx.doi.org/10.1007/s11664-014-3401-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 13 09 1432-1437 |
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10.1007/s11664-014-3401-1 doi (DE-627)SPR021521646 (SPR)s11664-014-3401-1-e DE-627 ger DE-627 rakwb eng Lee, Woo-Man verfasserin aut Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 13. Sept., Seite 1432-1437 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 https://dx.doi.org/10.1007/s11664-014-3401-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 13 09 1432-1437 |
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10.1007/s11664-014-3401-1 doi (DE-627)SPR021521646 (SPR)s11664-014-3401-1-e DE-627 ger DE-627 rakwb eng Lee, Woo-Man verfasserin aut Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites 2014 Text txt rdacontent Computermedien c rdamedia Online-Ressource cr rdacarrier © The Minerals, Metals & Materials Society 2014 Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 Shin, Dong-Kil aut Kim, Il-Ho aut Enthalten in Journal of electronic materials Warrendale, Pa : TMS, 1972 44(2014), 6 vom: 13. Sept., Seite 1432-1437 (DE-627)324918739 (DE-600)2032868-0 1543-186X nnns volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 https://dx.doi.org/10.1007/s11664-014-3401-1 lizenzpflichtig Volltext GBV_USEFLAG_A SYSFLAG_A GBV_SPRINGER GBV_ILN_11 GBV_ILN_20 GBV_ILN_22 GBV_ILN_23 GBV_ILN_24 GBV_ILN_31 GBV_ILN_32 GBV_ILN_39 GBV_ILN_40 GBV_ILN_60 GBV_ILN_62 GBV_ILN_63 GBV_ILN_65 GBV_ILN_69 GBV_ILN_70 GBV_ILN_73 GBV_ILN_74 GBV_ILN_90 GBV_ILN_95 GBV_ILN_100 GBV_ILN_105 GBV_ILN_110 GBV_ILN_120 GBV_ILN_138 GBV_ILN_150 GBV_ILN_151 GBV_ILN_152 GBV_ILN_161 GBV_ILN_170 GBV_ILN_171 GBV_ILN_187 GBV_ILN_213 GBV_ILN_224 GBV_ILN_230 GBV_ILN_250 GBV_ILN_281 GBV_ILN_285 GBV_ILN_293 GBV_ILN_370 GBV_ILN_602 GBV_ILN_636 GBV_ILN_702 GBV_ILN_2001 GBV_ILN_2003 GBV_ILN_2004 GBV_ILN_2005 GBV_ILN_2006 GBV_ILN_2007 GBV_ILN_2008 GBV_ILN_2009 GBV_ILN_2010 GBV_ILN_2011 GBV_ILN_2014 GBV_ILN_2015 GBV_ILN_2020 GBV_ILN_2021 GBV_ILN_2025 GBV_ILN_2026 GBV_ILN_2027 GBV_ILN_2031 GBV_ILN_2034 GBV_ILN_2037 GBV_ILN_2038 GBV_ILN_2039 GBV_ILN_2044 GBV_ILN_2048 GBV_ILN_2049 GBV_ILN_2050 GBV_ILN_2055 GBV_ILN_2057 GBV_ILN_2059 GBV_ILN_2061 GBV_ILN_2064 GBV_ILN_2065 GBV_ILN_2068 GBV_ILN_2070 GBV_ILN_2086 GBV_ILN_2088 GBV_ILN_2093 GBV_ILN_2106 GBV_ILN_2107 GBV_ILN_2108 GBV_ILN_2110 GBV_ILN_2111 GBV_ILN_2112 GBV_ILN_2113 GBV_ILN_2116 GBV_ILN_2118 GBV_ILN_2119 GBV_ILN_2122 GBV_ILN_2129 GBV_ILN_2143 GBV_ILN_2144 GBV_ILN_2147 GBV_ILN_2148 GBV_ILN_2152 GBV_ILN_2153 GBV_ILN_2188 GBV_ILN_2190 GBV_ILN_2232 GBV_ILN_2336 GBV_ILN_2446 GBV_ILN_2470 GBV_ILN_2472 GBV_ILN_2507 GBV_ILN_2522 GBV_ILN_2548 GBV_ILN_4035 GBV_ILN_4037 GBV_ILN_4046 GBV_ILN_4112 GBV_ILN_4125 GBV_ILN_4242 GBV_ILN_4246 GBV_ILN_4249 GBV_ILN_4251 GBV_ILN_4305 GBV_ILN_4306 GBV_ILN_4307 GBV_ILN_4313 GBV_ILN_4322 GBV_ILN_4323 GBV_ILN_4324 GBV_ILN_4325 GBV_ILN_4326 GBV_ILN_4328 GBV_ILN_4333 GBV_ILN_4334 GBV_ILN_4335 GBV_ILN_4336 GBV_ILN_4338 GBV_ILN_4393 GBV_ILN_4700 AR 44 2014 6 13 09 1432-1437 |
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English |
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Enthalten in Journal of electronic materials 44(2014), 6 vom: 13. Sept., Seite 1432-1437 volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 |
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Enthalten in Journal of electronic materials 44(2014), 6 vom: 13. Sept., Seite 1432-1437 volume:44 year:2014 number:6 day:13 month:09 pages:1432-1437 |
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Thermoelectric skutterudite filling charge compensation |
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Lee, Woo-Man @@aut@@ Shin, Dong-Kil @@aut@@ Kim, Il-Ho @@aut@@ |
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2014-09-13T00:00:00Z |
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X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. 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Lee, Woo-Man |
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Lee, Woo-Man misc Thermoelectric misc skutterudite misc filling misc charge compensation Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites Thermoelectric (dpeaa)DE-He213 skutterudite (dpeaa)DE-He213 filling (dpeaa)DE-He213 charge compensation (dpeaa)DE-He213 |
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Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
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Lee, Woo-Man Shin, Dong-Kil Kim, Il-Ho |
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Lee, Woo-Man |
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thermoelectric and transport properties of $ yb_{z} %$ fe_{4−x} %$ ni_{x} %$ sb_{12} $ skutterudites |
title_auth |
Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
abstract |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). © The Minerals, Metals & Materials Society 2014 |
abstractGer |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). © The Minerals, Metals & Materials Society 2014 |
abstract_unstemmed |
Abstract p-Type $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ (0.8 ≤ z ≤1.0, and 0.25 ≤ x ≤0.5) skutterudites were prepared, and the effects of Yb filling and Ni substitution on the thermoelectric properties were examined. X-ray diffraction patterns revealed that $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ skutterudites were synthesized, but small amounts of secondary phases ($ FeSb_{2} $ and Sb) were produced, except for the $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ specimen. This meant that the charge compensation with Ni and the amount of Yb filling should be sufficient to stabilize the skutterudite structure. All specimens had positive Hall coefficients and Seebeck coefficients, and the carrier concentration ranged from 9.80 × $ 10^{20} $ $ cm^{−3} $ to 3.37 × $ 10^{21} $ $ cm^{−3} $. The electrical conductivity decreased and the Seebeck coefficient increased with increasing Yb and Ni contents due to the decreased carrier concentration. The thermal conductivity decreased with increasing Yb and Ni contents, and $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $ showed the lowest thermal conductivity. The maximum dimensionless figure of merit achieved was of 0.62 at 723 K for $ YbFe_{3.5} %$ Ni_{0.5} %$ Sb_{12} $, based on the high power factor (2.6 $ mWm^{−1} $ $ K^{−2} $) and the low thermal conductivity (2.9 $ Wm^{−1} $ $ K^{−1} $). © The Minerals, Metals & Materials Society 2014 |
collection_details |
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container_issue |
6 |
title_short |
Thermoelectric and Transport Properties of $ Yb_{z} %$ Fe_{4−x} %$ Ni_{x} %$ Sb_{12} $ Skutterudites |
url |
https://dx.doi.org/10.1007/s11664-014-3401-1 |
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true |
author2 |
Shin, Dong-Kil Kim, Il-Ho |
author2Str |
Shin, Dong-Kil Kim, Il-Ho |
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hochschulschrift_bool |
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doi_str |
10.1007/s11664-014-3401-1 |
up_date |
2024-07-03T23:04:31.422Z |
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1803600916832583680 |
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|
score |
7.4004955 |